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Home > Elec-component > IC Chips > Memory
Description: The TC58NVG1S3ETAI0 is a 48-pin TSOP type NAND Flash memory manufactured by Toshiba. Features: - Capacity: 8GB - Voltage: 1.8V - Page Size: 4KB - Block Size: 128KB - Number of Blocks: 10
Stock:10000
Minimum:1
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CATALYST) Description: The CAT93C66VI-GT3 is a 1Kbit Serial EEPROM manufactured by Catalyst Semiconductor. It is a low-voltage, low-power device that is ideal for applications requiring a small amoun
Stock:10000
Minimum:4
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Stock:10000
Minimum:5
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Description: FM24C64B-GTR is a 64Kb Serial CMOS EEPROM from Cypress Semiconductor. It is a low-voltage, low-power memory device with a 2-wire serial interface. Features: 64Kb of Serial CMOS EEPROM m
Stock:10000
Minimum:50
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Description: The JS28F640P33TF70A is a 64Mb (8M x 8) CMOS Flash memory device. It is organized as 8,388,608 words of 8 bits each. Features: Single Power Supply Operation: 2.7V to 3.6V Fast Access T
Stock:5000
Minimum:5
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M95256-RMN6TP is a SOP8 package Serial EEPROM manufactured by STMicroelectronics. It is an 8Kb Serial SPI EEPROM with a write protect pin. Description: M95256-RMN6TP is an 8Kb Serial SPI EEPROM with
Stock:10000
Minimum:5
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Stock:999999
Minimum:100
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Description: The AT27C020-70PC is a 2 Megabit (256 K x 8-bit) CMOS UV EPROM and OTP EPROM. It is organized as 256 K x 8-bit and is fabricated with Atmel's high-performance CMOS technology. Features:
Stock:10000
Minimum:1
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Stock:999999
Minimum:100
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TSOP54
Micron Technology
10+
IC DRAM 128M PARALLEL 54TSOP
Description: MT48LC8M16A2P-7E:G is a 512Mb (64M x 8) Synchronous DRAM (SDRAM) in 54-pin TSOP II package. Features: Fast data access time: 7ns Low power consumption: 2.5V ± 0.2V JEDEC standard Aut
Stock:10000
Minimum:1
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Stock:2000
Minimum:1
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Stock:10000
Minimum:10
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Description: IS42S16100C1-7TLI is a 16Mb (2M x 8-bit) Synchronous DRAM, organized as 2M words by 8-bits. It is fabricated using ISSI's high performance CMOS technology. Features: Fast access time: 7
Stock:10000
Minimum:5
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Description: The CAT93C86VI-GT3 is a 16Kb Serial EEPROM from Catalyst Semiconductor. It is a low-voltage, low-power device that provides a nonvolatile storage solution for applications requiring up to
Stock:10000
Minimum:2
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Description: The MX25L12835EMI-10G is a 128Mb (16Mb x 8) CMOS 3.0V Serial Flash memory device. It is organized as 131,072 words of 8 bits each. Features: Low power consumption Single power supply o
Stock:10000
Minimum:2
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SOJ
Integrated Device Technology
0343+
IC SRAM 256K PARALLEL 28SOJ
Description: 256K x 12 Asynchronous SRAM Features: 256K x 12 asynchronous SRAM Low power CMOS technology Fast access time: 10/12/15/20/25/35/50/70/100/120/150/200ns Single +5V power supply
Stock:10000
Minimum:2
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Description: The AT25DF161-SH-T is a 16Mbit (2Mbyte) Serial Flash memory device from Atmel. It is a low-power, high-performance, nonvolatile memory device. It is organized as 131,072 programmable pag
Stock:10000
Minimum:2
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Description: IS61C5128AS-25QLI is a 128K x 8-bit CMOS Static RAM from ISSI. Features: Low power CMOS technology Single 5V power supply Fast access time: 25ns Low power consumption: Active current:
Stock:10000
Minimum:1
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Stock:5000
Minimum:1
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Stock:10000
Minimum:10
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company