MRF9030L MRF9030
TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
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TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
Favoris
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA55H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
ni-780s
Freescale
09+
MRF7S21210HS 2110 - 2170 MHz, 63 W AVG., 28 V [RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Favoris
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
H46S
Mitsubishi
2013
Silicon RF Devices RF High Power MOS FET Modules RA07M1317M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H2127M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
H2S
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA13H4047M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
Favoris
H46S
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA07H4047M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RA07H4047M is a power transistor manufactured by Mitsubishi. It is a NPN type transistor with a maximum collector current of 7A and a maximum collector-emitter voltage of 400V. It is used in power amp
Favoris
H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favoris
Experts en arrêt de production, nous pouvons fournir un grand nombre de composants électroniques dont la production a été arrêtée et qui sont difficiles à trouver, pour faciliter l'entreprise de maintenance