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Codice paeseRisultati del filtro di ricerca:
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA80H1415M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:2000
Minimo:1
Preferito
Stock:5000
Minimo:1
Preferito
Stock:1136
Minimo:2
Preferito
SANYO) Description: The STK433-330 (HYB, SANYO) is a hybrid IC (Integrated Circuit) containing an amplifier and power supply circuit. It is designed for use in audio power amplifiers. Features: Hi
Stock:2000
Minimo:1
Preferito
Stock:2000
Minimo:1
Preferito
TO-270
Mitsubishi
18+
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions
Stock:5000
Minimo:100
Preferito
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA60H4452M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:2000
Minimo:1
Preferito
RD01MUS1 is a surface-mountable, low-power, low-noise, high-speed, low-voltage differential signal (LVDS) driver IC manufactured by Mitsubishi. It is designed for use in LCD displays, such as those fo
Stock:10000
Minimo:2
Preferito
Stock:3080
Minimo:1
Preferito
Stock:2000
Minimo:1
Preferito
STK433-840 is a power amplifier IC manufactured by SANYO. It is a three-channel audio power amplifier IC with built-in protection circuits. Description: The STK433-840 is a three-channel audio power
Stock:2000
Minimo:1
Preferito
H57
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA80H1415M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Stock:2000
Minimo:1
Preferito
Stock:2000
Minimo:1
Preferito
Stock:5000
Minimo:1
Preferito
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA80H1415M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Description: The RA60H1317M1A-201 is a power amplifier module from Mitsubishi. It is a high-power amplifier module with a rated output power of 60W. Features: High output power of 60W High effi
Stock:2000
Minimo:1
Preferito
Stock:5000
Minimo:1
Preferito
Description: The MW7IC2725NB is a high-voltage, high-speed, N-channel MOSFET from Freescale Semiconductor. Features: - Low on-resistance - High-speed switching - High-voltage rating - Low gate charge
Stock:2000
Minimo:1
Preferito
Stock:2000
Minimo:1
Preferito
SMD
Mitsubishi
16+
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range
Stock:2000
Minimo:1
Preferito
Stock:10000
Minimo:1
Preferito
Ferma gli esperti di produzione, siamo in grado di fornire un gran numero di componenti elettronici che sono stati interrotti e che sono difficili da trovare, per facilitare la società di manutenzione