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TO-3PF
Parameter Symbol Min Typ Max Unit Description Supply Voltage Vcc 2.7 - 5.5 V Operating voltage range Output Current Iout - 100 250 mA Maximum continuous output current Quiescent Current Iq
TO-251
13+
Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCEO 80 V Maximum collector-emitter voltage Collector-Base Voltage VCBO 80 V Maximum collector-base voltage Emitt
TO-247
Magnachip Semiconductor
14+
Parameter Description Value Unit Part Number Component Identifier 40T65FDSC B - Type Component Type MOSFET - VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Continuous D
TO-220F
NEC
Parameter Value Unit Type P-channel MOSFET - Drain-Source Voltage (VDS) 500 V Gate-Source Voltage (VGS) ±20 V Continuous Drain Current (ID) 1.0 A Pulse Drain Current (IDM) 4.0 A Input
TO-247
International Rectifier
Parameter Value Unit Device IRGP50B60PD1PBF Package TO-247 Maximum Drain Current 50 A Maximum Gate Source Voltage ±20 V Maximum Drain Source Voltage 600 V RDS(on) (Max) @ VGS = 10V
TO-252
Fairchild
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDSS - - 1000 V Maximum drain-to-source voltage Gate-Source Voltage VGS -20 - 20 V Maximum gate-to-source voltage Continuo
TO-3P
Sanken Electric
99+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - - 80 V Collector-Base Voltage VCBO - - 90 V Emitter-Base Voltage (Reverse) VEBO - - 5 V Collector Current (Continuous) I
TO-220F
UTC
Parameter Symbol Min Typ Max Unit Description Forward Voltage VF - 2.0 2.4 V @ 20mA Forward voltage at 20mA Reverse Breakdown Voltage VBR 100 - - V Minimum reverse breakdown voltage Continu
TO-252
On Semiconductor
16+
Parameter MBRD640CTT4G B640T B640TG Type Schottky Diode Schottky Diode Schottky Diode Package TO-220AB TO-220AB TO-220AB Max Forward Voltage (Vf) @ 30A 0.55V 0.55V 0.55V Reverse Recovery
TDSON-8
Infineon Technologies AG
18+
Parameter Symbol Min Typ Max Unit Description Input Voltage VIN -0.3 65 V Maximum allowable input voltage Continuous Current ICONT 28 A Continuous current at 25°C ambient temperature Pea
TO-252
Apec
Parameter Description Value Part Number Full Part Number 9997GH=AP9997GH Type Device Type [Specify Type] Package Package Type [Specify Package] Pin Count Number of Pins [Specify Pin Count
TO-220F
APT
Description: The AP2762I is a high-efficiency, low-dropout (LDO) linear regulator with an output current of up to 1.5A. Features: Output voltage range: 0.8V to 5.5V Output current: 1.5A Dro
DO-41
On Semiconductor
18+
Parameter Symbol Min Typ Max Unit Notes Forward Voltage VF - 1.1 1.3 V @ IF = 10 A Reverse Blocking Voltage VR(RM) 200 - - V Average Rectified Current IF(AV) - - 20 A TA = 25°C Peak Sur
TO-3P
Fairchild
Parameter Symbol Value Unit Notes Drain-Source On-State Resistance RDS(on) 0.12 Ω At VGS = 10V, ID = 24A Gate-Source Voltage VGS ±20 V Maximum Drain-Source Voltage VDS 500 V Maximum Conti
TO-3P
05+
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD 2.7 5 5.5 V Operating supply voltage Output Current IOUT - 100 200 mA Maximum continuous output current Operating Temperatur
TO-220F
Fuji Electric
18+
Description: The FMV20N60S1HF is a N-channel MOSFET manufactured by Fuji Electric. It is a high-speed switching device with low on-state resistance. Features: Low on-state resistance High-speed swi
TO-247
STMicroelectronics
11+
Parameter GW38IH130D STGW38IH130D Type IGBT IGBT Collector-Emitter Voltage (Vce) [V] 1300 1300 Collector Current (Ic) [A] 38 38 Gate-Emitter Voltage (Vge) [V] ±20 ±20 Power Dissipation
TO-220F
Semihow
10+
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage V CES 75 V Gate-Source Voltage V GS -10 10 V Continuous Collector Current I C 75 A T C = 25°C Pulse Collector
TDSON-8
Infineon Technologies AG
18+
Parameter Symbol Min Typical Max Unit Conditions Drain-Source Voltage VDS - 60 - V Continuous Gate-Source Voltage VGS -15 - 15 V Continuous Continuous Drain Current ID - 2.8 - A TC = 25°C,
TO-220
International Rectifier
17+
Description: The L2203N is a N-Channel Enhancement Mode Field Effect Transistor (FET) designed for use in high-side load switching applications. Features: Low On-Resistance Low Input Capacitanc
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