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TO-247
International Rectifier
12+13+
Parameter Symbol Min Typ Max Unit Notes Input Voltage VIN 8 - 20 V Output Voltage VOUT - 5 - V Continuous Output Current IOUT - 42 - A Peak Output Current IOUT(PK) - 70 - A Switchin
TO-220F
Shindengen
14+
Parameter Symbol Min Typ Max Unit Conditions Rated Voltage VR - 600 - V DC Rated Current IR - 10 - A Continuous at 25°C Reverse Recovery Time trr - 35 - ns IF = 10A, dIR/dt = 100A/μs Junc
Parameter Symbol Min Typical Max Unit Drain-Source Voltage VDS - 600 - V Gate-Source Voltage VGS -15 - 20 V Continuous Drain Current ID - 60 - A Pulse Drain Current IDpeak - 180 - A Pow
Parameter Value Unit Collector-Emitter Voltage (VCEO) 100 V Emitter-Base Voltage (VEBO) 5 V Collector Current Continuous (IC) 15 A Power Dissipation (PD) 90 W Junction Temperature (TJ)
TO-220
STMicroelectronics
10+
Parameter Symbol Min Typ Max Unit Description Input Voltage VIN - 300 650 V Operating input voltage range Output Voltage VOUT - 5 24 V Adjustable output voltage range Continuous Output Curr
TO-220
STMicroelectronics
17+
Description: N-Channel 100V - 0.0086 Ohm - 100A - TO-220 Features: - Low on-state resistance - Low gate charge - Fast switching - Avalanche rated - RoHS compliant Applications: - DC/DC converters - M
TO-220
STMicroelectronics
17+
Description: The BTA12-800BW is a TRIAC from STMicroelectronics. It is a three-terminal bidirectional device that is used to control the current in an AC circuit. Features: 800V blocking voltage
TO-220F
STMicroelectronics
12+
Parameter Symbol Min Typical Max Unit Conditions Drain-Source Voltage VDS - - 250 V - Gate-Source Voltage VGS -15 - 15 V - Continuous Drain Current ID - - 17 A TC = 25°C Continuous Drain
TO-220F
UTC
13+
Parameter Symbol Min Typ Max Unit Notes Breakdown Voltage V(BR)DSS - 600 - V Drain-Source On-State Resistance RDS(on) - 1.3 - Ω @ 25°C, VGS = 10V Gate Threshold Voltage VGS(th) 2.0 4.0 6.
TO-220F
13+
Parameter Symbol Value Unit Collector-Emitter Voltage VCE 30 V Emitter-Base Voltage VEB 5 V Collector Current IC 1500 mA Base Current IB 150 mA Power Dissipation PT 65 W Transition Fr
Parameter Symbol Min Typ Max Unit Input Voltage VIN 27 - 40 V Output Voltage VOUT 24 24 24 V Output Current IOUT - 1.5 1.5 A Quiescent Current IQ - 6.5 - mA Dropout Voltage VDROPOUT - 2
TO-220
FSC
03+
Parameter Symbol Value Unit Maximum Drain-Source Voltage VDS(max) 500 V Maximum Gate-Source Voltage VGS(max) ±20 V Maximum Continuous Drain Current ID(max) 15 A Maximum Pulse Drain Curren
SOT-23
16＋
Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCEO - - 30 V Maximum voltage between collector and emitter with base open Emitter-Collector Voltage VEBO - - 5 V Maxim
TO-220F
Panjit
17+
Parameter Symbol Min Typ Max Unit Description Rated Forward Voltage VF - 1.1 1.7 V @ IF = 30A, TJ = 25°C Maximum forward voltage drop at rated current and temperature Reverse Blocking Voltage
TO-220F
NEC
03+
Description: FK10KM-12 is a TO-220F package Fast Recovery Rectifier Diode manufactured by NEC. Features: - Low forward voltage drop - High current capability - High surge current capability - High re
KTC1027-Y-AT/P is a N-channel MOSFET transistor manufactured by KEC. It is a surface mount device with a TO-252 package. Description: The KTC1027-Y-AT/P is a N-channel enhancement mode MOSFET transis
SOT-23
1709＋
Description: DMG2305UX-7 is a N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. Features: Low On-Resistance Low Input Capacitance Low Input/Output Leakage Low Gate Threshold
SOT-223
1836＋
Parameter Symbol Min Typical Max Unit Input Voltage V_IN 2.5 - 5.5 V Output Voltage V_OUT - 3.3 - V Output Current I_OUT - 500 600 mA Quiescent Current I_Q - 2.5 - μA Dropout Voltage V_
Parameter Symbol Min Typ Max Unit Notes Collector-Emitter Voltage VCEO - - 100 V Maximum voltage between collector and emitter with the base open. Emitter-Collector Voltage VEBO - - 5 V Maxim
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