≥1:
US $6.70560
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국가 코드INFINEON
당신의검색:17N80C3,관련제품수:55个
TO-247
Infineon Technologies AG
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: The 17N80C3 is an N-channel MOSFET transistor manufactured by Infineon Technologies. It is designed for high-speed switching applications. Features: High-speed switching Low on-state r
재고:10000
최소:1
즐겨 찾기
재고:1965
최소:5
즐겨 찾기
TO-247
Infineon Technologies AG
17+
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
재고:10000
최소:1
즐겨 찾기
재고:4
최소:2
즐겨 찾기
재고:15
최소:1
즐겨 찾기
재고:8000
최소:5
즐겨 찾기
재고:13000
최소:5
즐겨 찾기
Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance
재고:214
최소:2
즐겨 찾기
Description: The SPW17N80C3 is an N-channel MOSFET from Infineon Technologies. This device is designed for use in high-side switching applications. It features a low on-resistance of 17 mΩ and a maxim
재고:377
최소:1
즐겨 찾기
TO220F
Infineon Technologies AG
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: N-Channel MOSFET Transistor Features: - Low gate charge - Low on-resistance - Low input and output capacitance - Fast switching - RoHS Compliant Applications: - DC/DC converters - Motor
재고:10000
최소:2
즐겨 찾기
TO-220
Infineon Technologies AG
N-Channel MOSFETs >500V?900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
DESCRIPTION: SPP17N80C3 is a N-channel power MOSFET produced by Infineon, with a package type of TO-220. FEATURES: Low gate charge Low On-Resistance Improved Power Loss High Avalanche Ruggednes
재고:10000
최소:2
즐겨 찾기
Description: The SPB17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-performance, low-on-resistance, and low-gate charge device designed for use in high-efficiency switching a
재고:10000
최소:2
즐겨 찾기
TO-247
Infineon Technologies AG
05+
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: The SPW17N80C3 is a N-channel MOSFET from Infineon Technologies. Features: * 800V drain-source voltage * 17A continuous drain current * Low gate charge * Low on-resistance * Avalanche-ra
재고:10000
최소:1
즐겨 찾기
재고:1241
최소:10
즐겨 찾기
재고:167
최소:1
즐겨 찾기
재고:3000
최소:5
즐겨 찾기
재고:899
최소:5
즐겨 찾기
재고:13008
최소:5
즐겨 찾기
재고:5590
최소:5
즐겨 찾기
재고:20327
최소:2
즐겨 찾기
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