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Ana sayfa > Elektrik bileşeni > IC Yongaları > PMIC - Kapı Sürücüleri
Description: The TC4424AVOA713 is a dual MOSFET driver from Microchip. It is designed to drive two N-channel MOSFETs in a half-bridge configuration. It is available in an 8-pin SOIC package. Features
Stok:10000
Asgari:3
Favori
Description: The IRS21844STRPBF is a high-voltage, high-speed, low-side gate driver IC with a built-in 4A (peak) gate driver. Features: - Operating voltage range: 8V to 18V - Output current: 4A (peak
Stok:10000
Asgari:2
Favori
Stok:10000
Asgari:2
Favori
Description: The MIC4422CT is a dual high-speed MOSFET driver with a wide operating voltage range of 4.5V to 18V. It is designed to drive two N-channel enhancement mode MOSFETs in a half-bridge config
Stok:10000
Asgari:1
Favori
Description: The MIC4424BM is a low-side MOSFET driver that can drive up to 4A of peak current. It has an operating voltage range of 4.5V to 18V and can be used to drive a wide range of MOSFETs. Featu
Stok:10000
Asgari:2
Favori
MP18021HN-A-LF-Z is a low-voltage, low-dropout (LDO) linear regulator with a maximum output current of 1A. It is designed to provide a regulated output voltage of 1.8V with an input voltage range of 2
Stok:10000
Asgari:5
Favori
Description: FAN3224CMX is a dual-channel high- and low-side gate driver IC from Fairchild Semiconductor. It is designed to drive N-channel MOSFETs and IGBTs in a variety of switching applications. F
Stok:10000
Asgari:2
Favori
Stok:10000
Asgari:10
Favori
Description: The IR2104STR is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Features: High Voltage Outputs: 600V High Speed:
Stok:10000
Asgari:10
Favori
Description: The IR2117 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Features: Undervoltage lockout Independent high and
Stok:10000
Asgari:5
Favori
Description: The IR2233J is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Features: High voltage capability up to 600V High s
Stok:10000
Asgari:2
Favori
Description: The TC4426EPA is an 8-pin dual MOSFET driver designed to drive high-side and low-side N-channel MOSFETs in a variety of power management and motor control applications. Features: - High-
Stok:10000
Asgari:3
Favori
Description: The IR2101STRPBF is an advanced high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Features: High voltage capability up
Stok:10000
Asgari:10
Favori
Stok:10000
Asgari:2
Favori
Description: The LT1161 is a micropower low dropout (LDO) linear regulator with a wide input voltage range of 2.2V to 40V and a low quiescent current of only 2.5mA. Features: Wide Input Voltage Rang
Stok:10000
Asgari:1
Favori
Description: The MIC4427YN is a low-side, high-speed MOSFET driver with an integrated charge pump. It is designed to drive N-channel MOSFETs in high-side and low-side configurations. Features: Hig
Stok:10000
Asgari:2
Favori
Description: The IR4427SPBF is a high and low side driver IC with a built-in charge pump and a low RDS(on) output stage. It is designed to drive high side and low side N-channel MOSFETs or IGBTs in a
Stok:10000
Asgari:2
Favori
TC1412NEOA713 is a SOP8 package voltage regulator IC manufactured by Microchip. It is a low-dropout (LDO) linear regulator with an output voltage of 1.2V and a maximum output current of 500mA. It feat
Stok:10000
Asgari:5
Favori
Description: High and Low Side Driver Features: High and Low Side Driver Internal Bootstrap Diode Undervoltage Lockout Thermal Shutdown Overcurrent Protection Short Circuit Protection Logic Lev
Stok:10000
Asgari:4
Favori
Description: The MIC4428ZM is a dual high-side MOSFET driver with a wide operating voltage range of 4.5V to 18V. Features: Low propagation delay: 20ns Low output saturation voltage: 0.3V High peak
Stok:10000
Asgari:4
Favori
Üretimi durdurma uzmanları, bakım şirketini kolaylaştırmak için üretimi durdurulmuş ve bulunması zor olan çok sayıda elektronik bileşen sağlayabiliriz