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Utsource certified used parts
Utsource sertifikalı kullanılmış parçalar aşağıdaki garantileri sağlar
1. Utsource, görünüm denetimi (görünümde ciddi hasar yok) dahil olmak üzere malları inceleyecek, nitelikli ve dürüst tedarikçileri seçecek ve% 98 yeterlilik oranı sağlayacaktır.
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Açıklama
Type = Ipm Module
Voltage = 600V
Current = 75A
Circuit Configuration = Seven Pac
Recommended For Designs =
Switching Loss Curves =
Bu sitede kullanılan tüm ürün adları, ticari markalar, markalar ve logolar ilgili sahiplerinin mülkiyetindedir. Bu adları, ticari markaları, markaları ve logoları içeren ürünlerin tasviri, açıklaması veya satışı yalnızca tanımlama amaçlıdır ve herhangi bir hak sahibi ile herhangi bir ilişkiyi veya yetkiyi göstermeyi amaçlamaz.
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Aynı üretimden bazı Parça numaraları
Some Part number from the same manufacture Powerex, Inc. |
PM75RSD120 Type = Ipm Module ;; Voltage = 1200V ;; Current = 75A ;; Circuit Configuration = Seven Pac ;; Recommended For Designs = ;; Switching Loss Curves = |
PM75RSK060 Type = Ipm Module ;; Voltage = 600V ;; Current = 75A ;; Circuit Configuration = Seven Pac ;; Recommended For Designs = ;; Switching Loss Curves = |
PM75RVA060 |
PM800HSA060 Type = Ipm Module ;; Voltage = 600V ;; Current = 800A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
PM800HSA120 Type = Ipm Module ;; Voltage = 1200V ;; Current = 800A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves = |
PP100B060 Voltage = 600V ;; Current = 100A ;; Circuit Configuration = H-bridge |
PP100B120 Voltage = 1200V ;; Current = 100A ;; Circuit Configuration = H-bridge |
PP100T060 Voltage = 600V ;; Current = 100A ;; Circuit Configuration = 3 Phase |
PP100T120 Voltage = 1200V ;; Current = 100A ;; Circuit Configuration = 3 Phase |
PP1200D060 Voltage = 600V ;; Current = 1200A ;; Circuit Configuration = Half Bridge |
PP150B060 Voltage = 600V ;; Current = 150A ;; Circuit Configuration = H-bridge |
PP150B120 Voltage = 1200V ;; Current = 150A ;; Circuit Configuration = H-bridge |
PP150T060 Voltage = 600V ;; Current = 150A ;; Circuit Configuration = 3 Phase |
PP150T120 Voltage = 1200V ;; Current = 150A ;; Circuit Configuration = 3 Phase |
PP150T120-02 |
PP150T120-08 |
PP200B060 Voltage = 600V ;; Current = 200A ;; Circuit Configuration = H-bridge |
PP200B120 Voltage = 1200V ;; Current = 200A ;; Circuit Configuration = H-bridge |
PP200T060 Voltage = 600V ;; Current = 200A ;; Circuit Configuration = 3 Phase |
PP200T120 Voltage = 1200V ;; Current = 200A ;; Circuit Configuration = 3 Phase |
PP225D060 Voltage = 600V ;; Current = 225A ;; Circuit Configuration = Half Bridge |
R5100115XXWA : 100 A, 100 V, SILICON, RECTIFIER DIODE, DO-8 Specifications: Number of Diodes: 1 ; VRRM: 100 volts ; IF: 100000 mA ; trr: 7 ns R6101020XXYZ : 200 A, 1000 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: U61, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 200000 mA ; VRRM: 1000 volts R6110225XXYZ : 250 A, 200 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: U61, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 250000 mA ; VRRM: 200 volts R700033XXWA : 300 A, 300 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: R70, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 300000 mA ; VRRM: 300 volts R7S2098ESYA : 700 A, 900 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Package: R7S, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; IF: 700000 mA ; trr: 2 ns ; VRRM: 900 volts T607041334BT : 200 A, 100 V, SCR, TO-93 Specifications: VDRM: 100 volts ; VRRM: 100 volts ; IT(RMS): 200 amps ; IGT: 150 mA ; Package Type: TO-93, 3 PIN ; Pin Count: 3 T7S7105044DN : 786 A, 1000 V, SCR Specifications: VDRM: 1000 volts ; VRRM: 1000 volts ; IT(RMS): 786 amps ; IGT: 150 mA ; Package Type: CASE T7S, 3 PIN ; Pin Count: 3 T9G0141203DH : 4869 A, 1000 V, SCR Specifications: VDRM: 1000 volts ; VRRM: 1000 volts ; IT(RMS): 4869 amps ; IGT: 200 mA ; Standards and Certifications: RoHS ; Package Type: HERMETIC SEALED, CERAMIC PACKAGE-3 ; Pin Count: 3 |
Aynı kategori
Same catergory |
BC846-BC850 : NPN Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain ). BSH106 : BSH106; N-channel Enhancement Mode MOS Transistor. Very low threshold voltage Fast switching Logic level compatible Subminiature surface mount package N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH106 is supplied. BU505 : High Voltage NPN Multiepitaxial Fast-switching Transistor. HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES The is a high voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent lamps. Its characteristics make it also ideal for power supplies. BUK204-50Y : TopFET High Side Switch SMD Version of Buk200-50y: 50v, 10a. Monolithic temperature and overload protected power switch based on MOSFET technology a 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL IL SYMBOL VBG IL Tj RON PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance. FS2UM-18A : N-channel Power MOSFET High-speed Switching Use: 900v, 2a. APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th). SIDC03D120F6 : HV Chips. Used For Fast IGBT2. : 1200V EMCON technology 120 µm chip soft, fast switching low reverse recovery charge small temperature coefficient This chip is used for: EUPEC power modules and discrete devices Applications: SMPS, resonant applications, drives MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips. CM1000DU-34NF : Mega Power Dual™ IGBTMOD Powerex IGBTMOD™ Modules are designed for use in switching two IGBT applications. Each module consists of a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system. JANC1N962B : 11 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. RPC20 : RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5; 10; 20 %, 100; 200 ppm, 0.27 ohm - 22000000 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP ; Operating DC Voltage: 150 volts ; Operating Temperature: -55 to 155 C (-67. RPE210 : CAPACITOR, CERAMIC, 25; 50; 100 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -55 to 125 C (-67 to 257 F). TPCP8405 : 6500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0290 ohms ; Package Type: 2-3V1S, 8 PIN ; Number of units in IC: 2. UT131-5 : TRIAC,500V V(DRM),1A I(T)RMS,TO-92. s: Thyristor Type: Triac. Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers. logic integrated circuits and other low power gate trigger circuits. Repetitive Peak Off-State Voltage UT131-6 UT131-8 RMS On-State. 502R30 : CAPACITOR, CERAMIC, MULTILAYER, 5000 V, SURFACE MOUNT, 2211. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F). 933505290235 : VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET. s: Polarity: N-Channel ; V(BR)DSS: 20 volts ; Package Type: PLASTIC, SMD, SST3, 3 PIN ; Number of units in IC: 1. |
8 buyer reviews from Turkey
RIDVAN
Length of registration:3 years
Excellent seller, you can safely order
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10/06/2022
murat onder
Length of registration:9 years
perfect sale
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10/27/2020
Ahmet Salih KAHRAMAN
Length of registration:11 years
thanks
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02/25/2019
Elif Cakmak
Length of registration:5 years
Very satisfied with
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04/22/2018
Sadi Can
Length of registration:6 years
thank you:)
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11/09/2017
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PM75RSD060
PM75RSD060 dünya çapında bölgesel farklılıklar veya satın alma nedeniyle PM75RSD060 için alternatif adlara sahip olabilecek çeşitli markalara sahiptir. PM75RSD060 aşağıdaki isimlerle de biliniyor olabilir
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