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Utsource
SOD123/1206-4.7V
Liteon
05+
Description: The BZT52C4V7-13 is a 4.7V Zener diode from Liteon. Features: * Low leakage current * Low reverse current * Low forward voltage drop * High surge current capability Applications: The BZ
BZT52C4V7-13 Zener Diodes 4.7V 500mW/0.5W SOD123/1206-4.7V marking K5
SOT-323/SC-70/UMD3
ROHM Semiconductor
05+93knopb
Description: The DAN202U is a dual N-channel MOSFET transistor manufactured by ROHM. It is housed in a SOT-323/SC-70/UMD3 package. Features: Low on-resistance High-speed switching High-volt
DAN202U 1 PAir Common cathode Switching Diodes 80V 100mA/0.1A SOT-23/SC-59/SMD3 marking N ultra highspeed switch
SOT-23/SC-59
Nxp/philips
05+nopb
Description: NPN Bipolar Transistor Features: - Low voltage (Vceo = 40 V) - Low current (Ic = 200 mA) - High current gain (hFE = 100-500) - Low noise - Low power dissipation - High switching speed - H
PMBT2369 NPN Transistors(BJT) 40V 200mA/0.2A 500MHz 120 250mV/0.25V SOT-23/SC-59 marking 1J switch
SOT-23/SC-59
Motorola
05+
Parameter Symbol Min Typ Max Unit Description Supply Voltage VDD -0.3 5.5 V Maximum supply voltage Output Current IO 100 mA Continuous output current Operating Temp. TA -40 85 °C Ambien
BCW30LT1 PNP transistors(BJT) -32V -100mA/-0.1A 215~500 -300mV/-0.3V SOT-23/SC-59 marking C2
SOT-23/SC-59
Panasonic
05+
Description: 2SC2405 is a NPN silicon epitaxial transistor manufactured by Panasonic. Features: Low collector-emitter saturation voltage High current gain High frequency operation High breakdown
2SC2405 NPN Transistors(BJT) 35V 50mA 260~520 700mV/0.7V SOT-23/SC-59 marking SS low frequency low noise amplifier
SOT-23/SC-59
Mitsubishi
05+
Parameter Symbol Min Typical Max Unit Description Supply Voltage VCC 4.75 5.0 5.25 V Operating supply voltage Operating Temperature Toper -40 - 85 °C Operating temperature range Storage Tem
mC2836 1 PAir Common Anode Switching Diodes 50V 100mA/0.1A SOT-23/SC-59 marking A4 highspeed switch
SOT-323/SC-70/USM
KEC
05+
Description: KRC402 is a NPN transistor manufactured by KEC. Features: - Low collector-emitter saturation voltage - High current gain - Low noise - High switching speed Applications: - Audio amplifi
KRC402 NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 10k 10k SOT-323/SC-70/USM marking NB switch interface circuit driver circuit
SOT-23/SC-59
On Semiconductor
05+
MMBTA06LT1 is a PNP Bipolar Transistor manufactured by ON Semiconductor. It is a surface mount device in a SOT-23/SC-59 package. Description: The MMBTA06LT1 is a PNP Bipolar Transistor designed for g
MMBTA06LT1 NPN Transistors(BJT) 80V 500mA/0.5A 100Mhz 100 SOT-23/SC-59 marking 1GM
SOT-23/SC-59
Infineon Technologies AG
05+
Package: SOT-23/SC-59 Manufacturer: Infineon Description: BCR555 is a PNP transistor manufactured by Infineon. It is designed for use in general-purpose switching and amplification applications. Fea
BCR555 PNP Bipolar Digital Transistor (BRT) -50V -50mA 70 0.33W/330mW SOT-23/SC-59 marking XD switch inverter interface driver circuit
SOT-523/SSM
12+rohs
1SS361 1 PAir Common cathode Switching Diodes 80V 100mA/0.1A SOT-523/SSM marking B3 ultra highspeed switch
LL34-12V
Vishay Siliconix
08+ROHS
Description: The TZMB12-GS08 is a 12V Zener Diode from Vishay. Features: Low leakage current High temperature stability High power dissipation Low noise High reliability Applications: Voltage
TZMB12-GS08 ZENER DIODES LL34-12V
SOT-23/SC-59/SMT3
ROHM Semiconductor
04+
Manufacturer: ROHM Package: SOT-23/SC-59/SMT3 Description: NPN Transistor Features: Low collector-emitter saturation voltage Low collector-emitter leakage current High current gain Low noise High
SSTA06 NPN Transistors(BJT) 80V 500mA/0.5A 100MHz 100 250mV/0.25V SOT-23/SC-59/SMT3 marking R1G
SOT-323/SC-70/USM
KEC
05+
Description: NPN Silicon Epitaxial Planar Transistor Features: Low collector-emitter saturation voltage High current gain Low noise High switching speed High breakdown voltage Low collector-emit
KRC404 NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 47k 47k SOT-323/SC-70/USM marking ND switch interface circuit driver circuit
SOT-23/SC-59
Fairchild
06NOPB
Description: Dual Common Cathode Small Signal Diode Features: Low Forward Voltage Drop High Conductance Low Reverse Leakage Current Low Capacitance Low Thermal Resistance High Reli
mmBD7000 1 PAir series connection Switching Diodes 70V 200mA/0.2A SOT-23/SC-59 marking 5C ultra highspeed switch/high conductance
SOT-23/SC-59
KEC
06+12Knopb
KRA107S is a NPN transistor manufactured by KEC. It is a surface mount device in the SOT-23/SC-59 package. Description: KRA107S is a NPN transistor with a maximum collector current of 0.2A and a maxi
KRA107S PNP Bipolar Digital Transistor (BRT) -50V -100mA/-0.1A 0.2W/200mW SOT-23/SC-59 marking PH switch inverter interface driver circuit
SOT-23
Fairchild
10+ROHS
Description: NPN Bipolar Transistor Features: Low Collector-Emitter Saturation Voltage Low Noise High Gain Bandwidth Product High Current Gain High Switching Speed High Reliability
MMBT5550 NPN 160V 0.6A HEF=60~250 SOT23 MARKING 1F
1206
PIC
08NOPB
Package: 1206 Manufacturer: PIC Description: The CD4148WP is a CMOS analog multiplexer/demultiplexer with four channels. It is designed to be used as a single-pole, double-throw (SPDT) switch. Featu
CD4148WS Switching Diodes 75V 150mA/0.15A 0805 marking highspeed switch
SOT-23/SC-59/SMT3
ROHM Semiconductor
05+ROHS
Description: The DTB143EK is a P-channel MOSFET transistor manufactured by ROHM Semiconductor. It is housed in a SOT-23/SC-59/SMT3 package. Features: * High-speed switching * Low on-resistance * Low
DTB143EK PNP Bipolar Digital Transistor (BRT) -50V -500mA/0.5A 0.2W/200mW SOT-23/SC-59/SMT3 marking F13 switch inverter interface driver circuit
SOT-323/SC-70/MCP
Sanyo
05+
Description: NPN Silicon Epitaxial Planar Transistor Features: Low collector-emitter saturation voltage High current gain High frequency Low noise High transition frequency Complementary to 2SA
2SC4211 NPN Transistors(BJT) 55V 150mA/0.15A 200MHz 200~400 400mV/0.4V SOT-323/SC-70/MCP marking L6 small signal
SOT-23/SC-59
Sanyo
05+
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage VCEO - - 60 V Collector-Base Voltage VCBO - - 75 V Emitter-Base Voltage VEBO -5 - -6 V Collector Current IC - - 3 A Base
2SC2814F4 NPN Transistors(BJT) 30V 30mA 320MHz 90~180 SOT-23/SC-59 marking F4 high-frequency amplifier
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