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国家代码0805-601
Taiyo
05+
Description: The BK2125HS601-T is a 0805-sized chip inductor from Taiyo Yuden. It has a rated inductance of 1.2uH and a rated current of 1.2A. Features: * 0805-sized chip inductor * Rated inductance
tssop16
Burr-Browm
05+
Description: The ADS7846N is a low-power, 12-bit, 4-wire, serial input, touch screen controller. Features: 12-bit resolution Low power consumption 4-wire serial interface On-chip oscillator Low-
ADS7846N Integrated Circuit(IC)data collector tssop16 Marking ADS7846N
SOT23-6
STMicroelectronics
17+
Parameter Description Value Part Number USBLC6-2P6 - Function ESD Protection Diode Array for USB 2.0 Applications - Operating Voltage (V) Maximum Operating Voltage (DC) ±5.5V ESD Rating (
SOT-23
Vishay Siliconix
17+
Parameter GSOT05C GSOT06C GSOT07C GSOT08C Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET VDS (V) 50 60 70 80 VGS (V) ±20 ±20 ±20 ±20 ID (A) 10 12 14 16 RDS(on)
SOT-23
Apec
17+
Parameter Description Value Part Number Full Part Number AP2310GN-HF Function Type of Device Low Dropout Linear Regulator (LDO) Input Voltage Range Operating Input Voltage 2.7V to 5.5V Ou
SOT-23
Apec
17+
Parameter Description Value Part Number Full Part Number AP2310GN-HF Function Type of Device Low Dropout Linear Regulator (LDO) Input Voltage Range Operating Input Voltage 2.7V to 5.5V Ou
SOIC20
National Semiconductor
05+
Parameter Description Value Package Package Type CIWM Operating Temperature Operating Temperature Range -40°C to 85°C Supply Voltage (Vcc) Supply Voltage Range 4.5V to 5.5V Quiescent Curr
Active Filter Dual SW-CAP LMF100CIWM 100kHz 20-Pin SOIC20 Marking LMF100CIWM
SOT-23
Vishay Siliconix
17+
Parameter Description Value Part Number Part number of the device SI2305CDS-T1-GE3 Type Type of component MOSFET Package Package type SOT-23 VDS (Max) Maximum Drain-to-Source Voltage 60 V
SOT-23
Vishay Siliconix
17+
Parameter Description Value Unit Device Type N-Channel Enhancement Mode MOSFET Package Type SOT-23 Maximum Drain Current Continuous Drain Current at TC = 25°C 1.6 A Maximum Gate Sourc
SOT-23
Vishay Siliconix
17+
Parameter Description Value Unit Device Type N-Channel Enhancement Mode MOSFET Package Type SOT-23 Maximum Drain Current Continuous Drain Current at TC = 25°C 1.6 A Maximum Gate Sourc
SOT-23
Vishay Siliconix
17+
Parameter Value Part Number SI2308BDS-T1-GE3 Description N-Channel Enhancement Mode Power MOSFET Package Type TOLL (TO-263-8) Pin Count 8 Mounting Type Surface Mount Operating Tempera
sot-23
Vishay Siliconix
17+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS -55 - 55 V Maximum drain-to-source voltage Gate-Source Voltage VGS -8 - 8 V Maximum gate-to-source voltage Continuous
sot-23
Vishay Siliconix
17+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS -55 - 55 V Maximum drain-to-source voltage Gate-Source Voltage VGS -8 - 8 V Maximum gate-to-source voltage Continuous
SOT-23
Nexperia
17+
Parameter Symbol Min Typ Max Unit Conditions Operating Voltage Vop 3.6 - 5.5 V - Reverse Standoff Voltage Vrwm - - 5.0 V - Maximum Clamping Voltage Vc - 8.1 - V @1 A Peak Pulse Current Ip
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