≥1:
US $0.20865
Click Here to enter Utsource site
Hello! Sign In or Register now
APP Datasheet 380K likes UtsourceBuy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeSearch results filter:
DO-214AA/SMB
Vishay Siliconix
Parameter Symbol Conditions Min Typ Max Unit Reverse Standoff Voltage Vrwm 16 V Maximum Clamping Voltage Vc Ipp = 20.8A 34.7 V Peak Pulse Current Ipp Tp = 10/1000μs 20.8 A Reverse
Stock:10000
Minimum:17
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage Vceo - 600 - V Collector-Base Voltage Vcbo - 650 - V Emitter-Base Voltage Vebo -1 - 5 V Continuous Collector Current Ic - 1
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
International Rectifier
Parameter Symbol Min Typ Max Unit Continuous Drain Current ID - 60 - A Pulse Drain Current IDM - 120 - A (t = 10 μs) Gate-Source Voltage VGS -15 - 20 V Drain-Source Breakdown Voltage V(BR
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F
Apec
09+
Parameter Symbol Conditions Min Typ Max Unit Input Voltage VIN Continuous 2.7 5.5 V Output Voltage VOUT Fixed 3.3 V Output Current IOUT Continuous 1.0 A Quiescent Current IQ VIN = 5V
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F
11+
Parameter / Model 2SJ303 J303 2SJ303-AZ Type PNP Power Transistor PNP Power Transistor PNP Power Transistor Collector-Emitter Voltage (Vceo) 100 V 100 V 100 V Emitter-Base Voltage (Vebo) 5
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
Mospec
05+
Parameter Symbol Min Typical Max Unit Input Voltage V_IN 2.7 - 5.5 V Output Voltage V_OUT - 3.3 - V Output Current I_OUT - 400 - mA Quiescent Current I_Q - 10 - μA Dropout Voltage V_DRO
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
Parameter Value Unit Device IRLR8726PBF Type MOSFET Package SO-8 VDS (Drain-Source Voltage) 30 V RDS(on) @ VGS=10V 1.4 mΩ ID (Continuous Drain Current) 59 A PD (Power Dissipation
Stock:10000
Minimum:4
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
to-247
Parameter Value Unit Part Number IKW08T120 - Package Type TO-247 - Status Original Stock - VDS (Max Drain-Source Voltage) 120 V ID (Continuous Drain Current) 8 A RDS(on) (On-State Res
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
DO-214AA/SMB
Vishay Siliconix
19+
Parameter Symbol Min Typical Max Unit Reverse Standoff Voltage VRWM - 5.0 - V Maximum Clamping Voltage VC - - 7.6 V Peak Pulse Current (8/20μs) IPP - - 14 A Reverse Leakage Current IR - -
Stock:30000
Minimum:37
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
Parameter Symbol Min Typical Max Unit Input Voltage VIN 3.0 - 40 V Output Voltage VOUT 1.25 - 37 V Output Current IOUT 1.5 - 1.5 A Line Regulation - 0.01 - %/V Load Regulation - 0.1 -
Stock:10000
Minimum:8
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO220
STMicroelectronics
18+
Parameter Symbol Conditions Min Typ Max Unit Repetitive Peak Off-State Voltage V DRM T J = 25°C - 600 - V Repetitive Peak Reverse Voltage V RRM T J = 25°C - 600 - V Non-Repetitive Peak Off-
Stock:10000
Minimum:10
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
13+
The TK6A50D is a 600V, 6A N-channel MOSFET produced by Toshiba. It is a surface mount device with a TO-220F package. Description: The TK6A50D is a N-channel MOSFET with a maximum drain-source voltage
Stock:10000
Minimum:6
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
Parameter Description Part Number FDA50N50 Type N-Channel MOSFET VDS (Max) 500V VGS (Max) ±20V ID (Max) 50A (Pulsed) / 18A (Continuous) RDS(on) (Max) 0.035Ω @ VGS = 10V Power Dissip
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
Infineon Technologies AG
19+
Parameter Symbol Value Unit Maximum Drain-to-Source Voltage VDS 600 V Continuous Drain Current (Tc = 25°C) ID 34 A Continuous Drain Current (Tc = 100°C) ID 24 A Pulse Drain Current (Tc =
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F
Fairchild
14+
Description: FDPF51N25 is a N-channel MOSFET transistor manufactured by Fairchild Semiconductor. Features: - Low On-Resistance - Low Gate Charge - Fast Switching Speed - RoHS Compliant Applications
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
to-247
Description: The MJH11021 is a NPN Darlington Transistor in a TO-247 package. It is designed for use in power switching applications. Features: NPN Darlington Transistor TO-247 Package High Curr
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
to-126
Parameter Symbol Min Typ Max Unit Supply Voltage Vcc 4.5 - 30 V Continuous Collector Current Ic - 1.5 3.0 A Peak Collector Current Icm - - 5.0 A Collector-Emitter Saturation Voltage Vce(s
Stock:10000
Minimum:13
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
On Semiconductor
Parameter Symbol Min Typical Max Unit Condition Collector-Emitter Voltage VCEO - - -45 V IC = 0, TA = 25°C Emitter-Collector Voltage VEBO - - -5 V IE = 0, TA = 25°C Collector-Base Voltage V
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
On Semiconductor
20+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - - 100 V Collector-Base Voltage VCBO - - 100 V Emitter-Base Voltage VEBO - - 5 V Collector Current IC - - 1.5 A Base Cu
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
to-247TO-247
International Rectifier
Description: The IRGP4750D is an N-channel enhancement mode power MOSFET with a low gate charge and low on-resistance. It is designed for use in high efficiency power supplies, DC-DC converters, and
Stock:5000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company