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Utsource
to-220
HY
19+
Description: HY3306P is a high-performance, low-cost, high-current, low-voltage, three-terminal, N-channel MOSFET. It is designed for use in power switching applications such as DC-DC converters, moto
domestic
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
HY
19+
Description: The HY1607P is a TO-220 encapsulated power transistor designed for high voltage and high power applications. It is capable of withstanding up to 70V and can handle up to 80A of current.
domestic
Stock:10000
Minimum:8
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
STMicroelectronics
14+
Parameter Symbol Min Typ Max Unit Conditions Drain-Source Voltage VDS - - 60 V - Gate-Source Voltage VGS -10 - 20 V - Continuous Drain Current ID - 16 - A TC = 25°C Pulse Drain Current ID
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
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TO-220
STMicroelectronics
10+
Parameter BTA20-600CWRG BTA20-600CW Type Triac Triac Rated RMS Voltage (Vrms) 600 V 600 V Rated RMS Current (Irms) at 25°C 20 A 20 A Maximum Non-Repetitive Peak Off-State Voltage (Vdrm) 8
Stock:10000
Minimum:5
Standard delivery
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ESOP16
Chipstar
Parameter Description Min Typ Max Unit Supply Voltage Operating voltage range of the device 2.7 5.5 V Operating Current Current consumption during operation 3.0 mA Standby Current Curren
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
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SMAD
MDD
Parameter Description Type Metal Film Resistor Resistance (Ohms) 1MΩ ±5% Power Rating (Watts) 0.25W Tolerance ±5% Operating Temperature -55°C to +125°C Max Operating Voltage 350V Th
Stock:30000
Minimum:51
Standard delivery
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TO-220F
STMicroelectronics
16+
Parameter Symbol Min Typ Max Unit Conditions Continuous Current IF - 30 - A Ta = 25°C Peak Pulsed Current IFM - 90 - A t1ms, Ta = 25°C Reverse Voltage VR - 45 - V Forward Voltage VF 1.4
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220-5
National Semiconductor
Parameter Symbol Min Typical Max Unit Input Voltage VIN 4.5 - 40 V Output Voltage Range VOUT 1.23 - 37 V Output Current IOUT - 3 5 A Switching Frequency fSW - 52 - kHz Quiescent Current
Stock:10000
Minimum:10
Standard delivery
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Standard delivery: Estimated arrival {0}
TO-263
HY
19+
domestic
Stock:10000
Minimum:3
Standard delivery
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Standard delivery: Estimated arrival {0}
TO-220F
Fuji Electric
Parameter Description Value Part Number K3687 Type Phototransistor Package TO-46 Emitter Wavelength 950 nm Peak Sensitivity 880 nm Collector-Emitter Voltage (VCE) Maximum voltage
Stock:10000
Minimum:2
Standard delivery
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TO-252
ROHM Semiconductor
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage VCEO - - 900 V IC = 0, TA = 25°C Emitter-Collector Voltage VECS - - 900 V IC = 0, TA = 25°C Base-Emitter Voltage VBE -
Stock:10000
Minimum:4
Standard delivery
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TO-220
Philips
Below is the parameter table and instructions for the BUK455-100A, a high-voltage N-channel MOSFET. Parameter Table Parameter Symbol Min Typ Max Unit Conditions Drain-Source Voltage ( V_ ) - -
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F-4
Fairchild
01+
Parameter Symbol Min Typical Max Unit Input Voltage VIN 7 - 30 V Output Voltage VOUT - 5.0 - V Output Current (Max) IOUT - 1.0 - A Dropout Voltage VDROPOUT - 1.6 - V Quiescent Current I
Stock:10000
Minimum:5
Standard delivery
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TO-220
Motorola
00+
Parameter Symbol Min Typ Max Unit Notes Drain-Source Voltage VDS - 55 - V Gate-Source Voltage VGS -10 0 20 V Continuous Drain Current ID - 5.5 - A @ VDS = 5V, VGS = 10V, TA = 25°C Power
Stock:10000
Minimum:2
Standard delivery
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to-263
HY
19+
Description: HY4306B is a high-performance N-channel MOSFET with a low on-resistance of 230A and a maximum drain-source voltage of 60V. It is designed for use in high-efficiency power management appli
domestic
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO220
Teccor
10+
Below is the parameter table and instructions for the component 072-0043. Parameter Table Parameter Value Unit Part Number 072-0043 - Type Surface Mount - Package 0805 - Resistance 1000 Ω
Stock:10000
Minimum:1
Standard delivery
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to-263
HY
19+
Description: The HY3906B is a 60V190A replaceable IRFS3306 TO-263 package MOSFET from Infineon Technologies. It is a N-channel MOSFET with an RDS(on) of 0.0045 Ohm and a gate charge of 5.8nC. It is de
domestic
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
STMicroelectronics
Parameter Symbol Min Typ Max Unit Notes Drain-Source Voltage VDSS - 900 - V Gate-Source Voltage VGSS -20 - 20 V Continuous Drain Current ID - 15 - A @ TC = 25°C Pulse Drain Current IDM
Stock:2000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
Ruichips
19+
RU75N08R is a N-channel enhancement mode power MOSFET produced by RUICHIPS. Features: - Low on-resistance - High speed switching - Low gate charge - High current capability - Low threshold voltage A
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
Infineon Technologies AG
Parameter Symbol Min Typ Max Unit Conditions Drain-Source Voltage VDSS - - 600 V Gate-Source Voltage VGS -20 - 20 V Continuous Drain Current ID - 20 - A Tc = 25°C Pulse Drain Current ID
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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