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TO-220
International Rectifier
new cycle
Parameter Symbol Conditions Min Typ Max Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGS -10 20 V Continuous Drain Current ID TC = 25°C 31 A Pulse Drain Current IDM TC
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
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TO3P
14+
Description: TK16H60C is a high-speed, low-loss, high-current, three-terminal silicon power transistor manufactured by Toshiba. It is designed for use in high-frequency switching applications such as
Stock:10000
Minimum:2
Standard delivery
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DIP4
16＋
Parameter Symbol Min Typ Max Unit Description Input Voltage VIN 0.9 - 5.5 V Operating input voltage range Output Voltage VOUT - 3.3 - V Fixed output voltage Output Current IOUT - 1.5 2.0 A
Stock:2000
Minimum:1
Standard delivery
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Stock:2000
Minimum:1
Standard delivery
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TO-220
International Rectifier
04+/11+
Description: N-Channel Power MOSFET Package Type: TO-220 Manufacturer: IR (Infineon Technologies) Features: Low On-Resistance Low Gate Charge Fast Switching Avalanche Rated RoHS Compli
Stock:10000
Minimum:2
Standard delivery
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TO-220
Fairchild
Description: LM7812CT is a 3-terminal positive voltage regulator, designed to supply 12V of output voltage with a maximum current of 1.5A. Features: Output Voltage Range: 12V Output Current: 1.5
Stock:10000
Minimum:12
Standard delivery
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TO-247
International Rectifier
Parameter Symbol Value Unit Maximum Collector-Emitter Voltage VCE(max) 600 V Maximum Collector Current (TC = 25°C) IC(max) (25°C) 40 A Maximum Collector Current (TC = 100°C) IC(max) (100°C)
Stock:10000
Minimum:2
Standard delivery
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Stock:5000
Minimum:1
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DIP5
Murata Manufacturing Co Ltd
1611
Parameter Description Value Part Number Component Identifier NMA1215SC Type Component Type Surface Mount Inductor Package Physical Size and Shape 1215 (3.2 x 3.2 mm) Frequency Range Opera
Module DC-DC 12VIN 2-OUT 15V/-15V 0.033A/-0.033A 1W 5-Pin SIP Tube
Stock:2000
Minimum:1
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Stock:5000
Minimum:1
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TO-92
None
NEWEST
Parameter Symbol Min Typ Max Unit Forward Voltage VF - 1.3 - V @ 1A Reverse Breakdown Voltage VBR - - 600 V Holding Current IH - 5 15 mA Gate Trigger Current IGT - 10 50 μA Maximum RMS
Stock:10000
Minimum:13
Standard delivery
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SOD-123
Diodes
1507
Description: The BZT52C11Q-7-F is a Zener diode with a SOD-123 package. Features: Low leakage current Low noise Low forward voltage drop High stability High reliability Applications: Voltage r
Stock:10000
Minimum:2
Standard delivery
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Stock:2000
Minimum:1
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TO-247
Infineon Technologies AG
13+
Description: The IPW60R125CP is a high-voltage, high-speed power MOSFET transistor in a TO-247 package. Features: Low gate charge Low on-state resistance High switching speed Avalanche rate
Stock:10000
Minimum:1
Standard delivery
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TO-3PL
17+
2SA1987: Description: PNP Epitaxial Planar Silicon Transistor Features: - High voltage - High speed switching - High current capability - Low collector-emitter saturation voltage Applications: - Sw
Stock:10000
Minimum:1
Standard delivery
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:TO-92
16+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage V(BR)CEO - - 40 V Emitter-Base Voltage V(BR)EBO - - 6 V Collector-Base Voltage V(BR)CBO - - 50 V Collector Current IC - - 200 m
Stock:10000
Minimum:18
Standard delivery
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TO220F
Renesas
14+
BCR8PM-12L is a high-speed switching diode manufactured by Renesas. It is a TO220F package with a maximum reverse voltage of 12V. The device has a low forward voltage drop and fast switching speed. It
Stock:10000
Minimum:4
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Stock:10000
Minimum:2
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Stock:10000
Minimum:2
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Stock:5000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company
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