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Home > Elec-component > Transistors > Diodes
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SOT-23/SC-59
KEC
05+
KRC107S is a NPN epitaxial silicon transistor manufactured by KEC. It is a low voltage, low current, high frequency transistor with a maximum collector current of 500mA and a maximum collector-emitter
KRC107S NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 10k 47k SOT-23/SC-59 marking NH switch interface circuit driver circuit
Stock:30000
Minimum:27
Standard delivery
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SOT23-10v
Hitachi
04NOPB
Description: N-Channel MOSFET Features: Low On-Resistance Low Gate Charge Low Input Capacitance Fast Switching Speed High Reliability RoHS Compliant Applications: DC/DC Converters Load Swi
HZM10NB2TR Zener Diodes 10V 200mW/0.2W SOT23-10v marking B2 102
Stock:30000
Minimum:27
Standard delivery
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SOT23-13V
05+3Knopb
The 02CZ13-Y is a SOT23-13V NPN transistor manufactured by STMicroelectronics. It is a general purpose transistor with a maximum collector current of 0.1A and a maximum collector-emitter voltage of 30
02CZ13-Y Zener Diodes 13V 200mW/0.2W SOT23-13V marking 13Y Constant-Voltage Regulation/Reference Voltage
Stock:30000
Minimum:27
Standard delivery
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SOT-23/SC-59
KEC
08NOPB
Package: SOT-23/SC-59 Manufacturer: KEC Description: KDS184 is a NPN epitaxial planar silicon transistor designed for use in low frequency amplifier applications. Features: Low collector-emitter
KDS184 1 PAir Common cathode Switching Diodes 80V 100mA/0.1A SOT-23/SC-59 marking B3 ultra highspeed switch/low forward voltage
Stock:30000
Minimum:85
Standard delivery
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SOT-23/SC-59
Panasonic
05+
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - - 800 V Emitter-Collector Voltage VECS - - 800 V Base-Emitter Voltage VBE -1.5 - 1.5 V Collector Current IC - 3 15 A B
2SB709-R PNP transistors(BJT) -45V -100mA/-0.1A 80MHz 210~340 -500mV/-0.5V SOT-23/SC-59 marking AR amplifier
Stock:30000
Minimum:30
Standard delivery
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SOT23-15V
Hitachi
05+
Description: N-Channel Enhancement Mode MOSFET Features: - Low On-Resistance - Low Input Capacitance - Low Input and Output Leakage Current - Low Gate Charge - High Speed Switching - Avalanche Rated
HZM15NB2TR Zener Diodes 200mW/0.2W SOT23-15V marking B2 152
Stock:30000
Minimum:30
Standard delivery
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SOT-23/SC-59
Mitsubishi
05+
2SA1530A PNP transistors(BJT) -60V -150mA/-0.15A 200MHz 180~390 -300mV/-0.3V SOT-23/SC-59 marking TR low-frequency amplifier
Stock:10000
Minimum:13
Standard delivery
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SOT-23/SC-59
Vishay Siliconix
05+9krohs
Description: Dual N-Channel Enhancement Mode Field Effect Transistor Features: Low On-Resistance RDS(on) Low Input Capacitance Low Input/Output Leakage Fast Switching Speed ESD Pr
ImBD4148 Switching Diodes 75V 150mA/0.15A SOT-23/SC-59 marking A2 fast switch
Stock:30000
Minimum:27
Standard delivery
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SOT23-22V
Vishay Siliconix
06+15Knopb
Description: The BZX84C22 is a silicon epitaxial planar Zener diode, designed for use in stabilizing and clipping circuits with high power rating. Features: Low Leakage Current Low Noise High Pow
BZX84C22 Zener Diodes 22V 350mW/0.35W SOT23-22v marking Y8 low power
Stock:30000
Minimum:32
Standard delivery
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SOT23-4.3V
05+
Parameter Value Unit Type Zener Diode - Zener Voltage (Vz) 4.3 V Power Dissipation 200 mW Maximum Current 15 mA Operating Temperature -65 to 150 °C Package DO-35 - Instructions: M
02CZ4.3-Z Zener Diodes 4.3V 200mW/0.2W SOT23-4.3V marking 4.3Z Constant-Voltage Regulation/Reference Voltage
Stock:30000
Minimum:27
Standard delivery
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SOT-23/CP
Sanyo
05+
2SA1521 is a PNP transistor manufactured by Sanyo. It is a surface-mount transistor with a SOT-23/CP package. Description: The 2SA1521 is a PNP transistor designed for general-purpose switching and a
2SA1521 PNP transistors(BJT) -50V -500mA/-0.5A 250MHz 50 -100mV/-0.1V SOT-23/CP marking OL switch/bias resistor
Stock:10000
Minimum:15
Standard delivery
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SOT-23/SC-59/MPAK
Hitachi
04+
Description: 2SA1052 is a PNP transistor manufactured by Hitachi. Features: - Collector-Emitter Voltage (Vce): -20V - Collector-Base Voltage (Vcb): -30V - Emitter-Base Voltage (Veb): -5V - Collector
2SA1052 PNP transistors(BJT) -30V -100mA/-0.1A 160~320 -200mV/-0.2V SOT-23/MPAK marking MC Low-Frequency General-Purpose Amplifier
Stock:30000
Minimum:30
Standard delivery
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SOT-23/SC-59
Panasonic
07+3Knopb
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCE - - 60 V Emitter-Base Voltage VEB -5.5 - 5.5 V Collector Current IC - 3 5 A Base Current IB - 0.3 1 A Power Dissipation P
2SB709A-Q PNP transistors(BJT) -45V -100mA/-0.1A 80MHz 160~260 -500mV/-0.5V SOT-23/SC-59 marking BQ amplifier
Stock:30000
Minimum:153
Standard delivery
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SOT-323/SC-70
NEC
05+
Description: NPN Transistor Features: - Low collector-emitter saturation voltage - High current gain - Low noise - High switching speed - High reliability - Small package Applications: - Switching ci
GN1A4M PNP Bipolar Digital Transistor (BRT) -60V -100mA/-0.1A 35~100 0.15W/150mW SOT-323/SC-70 marking M33 switch inverter interface driver circuit
Stock:30000
Minimum:27
Standard delivery
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SOT-23/SC-59
NEC
05+
Package: SOT-23/SC-59 Manufacturer: NEC Description: N-Channel MOSFET Features: - Low On-Resistance - High Speed Switching - Low Gate Charge - Low Input Capacitance - High Input Impedance Applications
FN1F4M PNP Bipolar Digital Transistor (BRT) -60V -100mA/-0.1A 60~195 0.2W/200mW SOT-23/SC-59 marking M32 switch inverter interface driver circuit
Stock:30000
Minimum:27
Standard delivery
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SOT-23/SC-59
NEC
05+
Parameter Description Value Part Number Full Name FN1L4L Type Device Type Power MOSFET Package Package Type TO-220 Drain Voltage Maximum Drain-to-Source Voltage (Vds) 100V Gate Voltage
FN1L4L PNP Bipolar Digital Transistor (BRT) -60V -100mA/-0.1A 60~195 0.2W/200mW SOT-23/SC-59 marking M30 switch inverter interface driver circuit
Stock:30000
Minimum:27
Standard delivery
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SOT23-43V
On Semiconductor
05+
Description: Zener Diode, 43V, 0.5W, SOT23 Features: Low profile surface mount package High temperature soldering guaranteed: 260°C/10s at terminals Low leakage current Low zener impedance High
BZX84C43LT1 Zener Diodes 43V 225mW/0.225W SOT23-43V marking Y15 low power
Stock:30000
Minimum:27
Standard delivery
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SOT-323/SC-70
Mitsubishi
05+ROHS
Description: 2SA1602 is a PNP transistor manufactured by Mitsubishi. Features: Low collector-emitter saturation voltage High current gain High transition frequency Low collector-emitter saturat
2SA1602 PNP transistors(BJT) -50V -200mA/-0.2A 200MHz 250~500 -300mV/-0.3V SOT-323/SC-70 marking MF low-frequency amplifier
Stock:30000
Minimum:27
Standard delivery
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SOT-23/SC-59
KEC
05+rohs
Description: NPN Silicon Epitaxial Planar Transistor Features: - Low Collector-Emitter Saturation Voltage - High DC Current Gain - High Switching Speed - Low Collector Output Capacitance - Low Noise A
KRC105S NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 2.2k 47k SOT-23/SC-59 marking NE switch interface circuit driver circuit
Stock:30000
Minimum:27
Standard delivery
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1206-601
Murata Manufacturing
05+
Description: Murata BLM31AJ601SN1L is a 1206-sized, high-precision, low-ESR, SMD-type, multilayer ceramic capacitor. Features: High-precision capacitance Low ESR High reliability High temperature
Ferrite Bead BLM31AJ601SN1L 1206-601
Stock:30000
Minimum:27
Standard delivery
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