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Description
SEMITRANS IGBT Modules New Range
All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.
The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | V CES | 1200 | V | |||
| Emitter-Collector Voltage | V ECS | 1200 | V | |||
| Gate-Emitter Voltage | V GES | -20 | 20 | V | ||
| Continuous Collector Current | I C | Tc = 25°C | 75 | A | ||
| Tc = 80°C | 60 | A | ||||
| Pulse Collector Current | I CM | tp = 10 ms, Tc = 25°C | 150 | A | ||
| Power Dissipation | Ptot | Tc = 25°C | 2500 | W | ||
| Junction Temperature | Tj | -40 | 150 | °C | ||
| Storage Temperature | Tstg | -55 | 150 | °C |
Installation and Handling:
Electrical Connections:
Operating Conditions:
Thermal Management:
Gate Drive Requirements:
Protective Measures:
Storage and Environment:
For detailed application notes and more specific guidelines, refer to the manufacturer's datasheet or technical documentation.
(For reference only)Introduction:
The 7th generation IGBTs represent the latest IGBT chip technology. This new generation is specifically designed to match the needs of motor vehicle applications. The IGBTs come with the lowest voltage drop and deliver the optimized flexibility. Due to the small 25% chips, high frequency streams can fit into existing module packages. This module also reduces power losses and provide maximum output density.
Core Parameters:
● High voltage capability
● Low on-resistance
● Zero gate drive
● Moderate running and testing speed
Circuit Diagram:
Working:
The IGBT exerts a significantly reduced voltage drop compared to the standard MOSFET that blocks most closed voltage devices, although the MOSFETS show a lower voltage at lower current levels due to the absence of the diode Vf at the IGBT output. As blocking voltage levels on both MOSFET and IGBT devices increase, the depth of the n- drift circuit must increase and the depth should decrease, leading to a decrease in the square relationship to the pre-voltage reduction. By injecting a few carriers (holes) from the p + region into the entry region during activation, the circuit resistance can be significantly reduced.
Applications:
● Induction heating
● Traction motor control
● Uninterruptable supply
● Switch mode power supplies
| QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
|---|---|---|---|
| ≥1: | US $110.58450 | US $103.94943 | US $103.94943 |
| ≥2: | US $110.58450 | US $103.94943 | US $207.89886 |
| ≥5: | US $103.21220 | US $97.01947 | US $485.09735 |
| ≥10: | US $103.21220 | US $97.01947 | US $970.19470 |
| ≥20: | US $103.21220 | US $97.01947 | US $1940.38940 |
| ≥30: | US $103.21220 | US $97.01947 | US $2910.58410 |
| ≥50: | US $103.21220 | US $97.01947 | US $4850.97350 |
| ≥100: | US $102.47497 | US $96.32647 | US $9632.64700 |
| ≥500: | US $101.73774 | US $95.63348 | US $47816.74000 |
Substitute (equivalent) Product
| Substitute Product | Description |
|---|---|
| SKM75GB12T4 | A high-power IGBT module designed for high-frequency switching applications. |
| SKM75GD12T4 | This IGBT module offers low loss and soft-switching, suitable for various inverter applications. |
| SKM75GB128D | Features advanced IGBT technology for efficient and reliable power conversion. |
| SKM75GD128D | Equipped with advanced thermal management, ideal for high-performance inverter systems. |
| SKM100GB128D | Provides higher power capacity with robust performance for demanding applications. |
| SKM50GB123D | Offers similar specifications with a lower current rating, suitable for medium-power applications. |
| SKM75GD126D | Optimized for low power loss and efficient energy use, perfect for industrial motor drives. |
| SKM75GD124D | Combines high efficiency with compact design, ideal for space-constrained applications. |
Product Usage
The SKM75GD123D is an IGBT module (Insulated Gate Bipolar Transistor) produced by Semikron, which is widely used in power electronics circuits due to its efficiency and capability to handle high currents and voltages. Here are some typical applications and circuits that utilize the SKM75GD123D:
Inverters for Renewable Energy Systems:
Motor Drives:
Power Supplies:
Electric Vehicles:
HVAC Systems:
Industrial Automation:
Traction and Transportation:
The IGBT module within these applications typically serves the function of switching and controlling electric power with higher efficiency and lower heat dissipation compared to other types of transistors. The specific usage in a circuit involves the integration of the SKM75GD123D either in the design of a half-bridge, full-bridge, or as part of more complex topologies like multi-level converters, considering features like gate drive circuits and thermal management are designed according to the specific requirements of the application.
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| Flag | Country | Estimated Delivery Time | Minimum First Weight Cost | ||
|---|---|---|---|---|---|
| Express | Standard Shipping | Express (0.5kg) | Standard Shipping (0.05kg) | ||
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All UTSOURCE purchases have a 90 days money back return policy, plus a 100 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
SKM75GD123D
SKM75GD123D has several brands around the world that may have alternate names for SKM75GD123D due to regional differences or acquisition. SKM75GD123D may also be known as the following names:
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