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国コードSOT-23/SC-59
Fairchild
08+NOPB
MMBT2369 NPN Transistors(BJT) 40V 200mA/0.2A 40~120 200mV~500mV SOT-23/SC-59 marking 1J switch
SOT-23/SC-59
Fairchild
04+
Description: NPN Bipolar Transistor Features: Low Collector-Emitter Saturation Voltage High DC Current Gain Low Noise High Switching Speed Low Collector-Emitter Leakage Current Hig
KST5551MTF NPN Transistors(BJT) 180V 600mA/0.6a 300MHz 80~250 200mV/0.2V SOT-23/SC-59 marking G1 amplifier
SOT-23/SC-59
NEC
06+3Knopb
Parameter Symbol Min Typical Max Unit Conditions Collector-Emitter Voltage VCE - - 40 V Emitter-Base Voltage VEB -5.0 - - V Collector-Base Voltage VCB - - 30 V Collector Current IC - -
2SC1622A NPN Transistors(BJT) 120V 50mA 110MHz 200~400 300mV/0.3V SOT-23/SC-59 marking D16 Audio frequency High gain amplifier
SOT-23/SC-59/SMT3
ROHM Semiconductor
04+ROHS
Parameter Symbol Min Typ Max Unit Collector-Emitter Voltage VCEO - - 50 V Collector-Base Voltage VCBO - - 60 V Emitter-Base Voltage VEBO - - 5 V Collector Current IC - - 500 mA Base Cur
2SC2413K NPN Transistors(BJT) 40V 50mA 300MHz 82~180 300mV/0.3V SOT-23/SC-59/SMT3 marking AN high-frequency amplifier
SOT-23/SC-59
Fairchild
05+
Description: P-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Gate Threshold Voltage - Fast Switching Speed - High Input Impedance - Low Input Capacitance - High
KST2907AMTF PNP transistors(BJT) -60V -600mA/- 0.6A 200MHz 100~300 -1.6V SOT-23/SC-59 marking 2F
SOT-23/SC-59
Fairchild
05+
The KST3906MTF is a P-channel enhancement-mode MOSFET produced by Fairchild Semiconductor. It is available in a SOT-23/SC-59 package. Description: The KST3906MTF is a P-channel MOSFET with a low on-
KST3906MTF PNP transistors(BJT) -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23/SC-59 marking 2A
SOT-23/SC-59
Fairchild
05+
Description: Dual N-Channel Switching Diode Features: Low On-Resistance Low Leakage Current Low Capacitance High Speed Switching Halogen Free Applications: ESD Protection General Switching
BAV74 1 PAir Common cathode Switching Diodes 200mA/0.2A SOT-23/SC-59 marking JA ultra highspeed switch/high conductance
SOT-23/SC-59/SMT3
ROHM Semiconductor
05+
2SD1484K NPN Transistors(BJT) 50V 500mA/0.5A 250MHz 120~270 400mV/0.4V SOT-23/SC-59/SMT3 marking YQ medium power
SOT-323/SC-70/UMD3
ROHM Semiconductor
04nopb
Description: DA204U is a dual NPN transistor manufactured by ROHM. Features: - Low saturation voltage - High switching speed - Low collector-emitter saturation voltage - High current gain - High DC c
DA204U 1 PAir series connection Switching Diodes 20V 100mA/0.1A SOT-323/SC-70/UMD3 marking K highspeed switch
SOT-23/SC-59
Fairchild
04+
Description: N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Threshold Voltage - Low Input Capacitance - Low Input/Output Leakage Current - Fast Switching Speed
kst2484 NPN Transistors(BJT) 60V 50mA 250~800 350mV/0.35V SOT-23/SC-59 marking 1U
SOT-23/SC-59
12+
Description: 2SA1163 is a PNP transistor manufactured by Toshiba. Features: Low collector-emitter saturation voltage High current gain High breakdown voltage Low noise High switching speed App
2SA1163 PNP transistors(BJT) -120V -100mA/-0.1A 100MHz 200~700 -300mV/-0.3V SOT-23/SC-59 marking CG radio amplifier
SOT-23/MPAK
Hitachi
05+
Description: NPN Silicon Transistor Features: Low Collector-Emitter Saturation Voltage High DC Current Gain High Transition Frequency Low Noise High Breakdown Voltage Low Collector-Base Capaci
HSm223C Switching Diodes 80V 100mA/0.1A SOT-23/MPAK marking A8 highspeed switch
SOT-23/SC-59
Zetex
05+
Description: The BAV70TA is a dual low voltage NPN silicon planar switching transistor in a SOT-23/SC-59 package. Features: - Low voltage operation - Low current (max. 100mA) - High switching speed -
bAV70tA 1 PAir Common cathode Switching Diodes 53V 150mA/0.15A SOT-23/SC-59 marking A4 highspeed switch/high conductance
SOT-323/SC-70
05+
2SA1588 is a PNP transistor manufactured by Toshiba. It is a small signal transistor and is available in a SOT-323/SC-70 package. Description: The 2SA1588 is a PNP silicon epitaxial transistor d
2SA1588 PNP transistors(BJT) -35V -500mA/-0.5A 200MHz 70~240 -800mV/-0.8V SOT-323/SC-70 marking ZG radio /driver stage amplifier
SOT-23/SC-59
Nxp/philips
05+
Package: SOT-23/SC-59 Manufacturer: NXP/Philips Description: The BCX18 is a PNP silicon planar epitaxial transistor. Features: High current gain Low collector-emitter saturation voltage Low nois
BCX18 PNP transistors(BJT) -30V -500mA/-0.5A 80MHz 100~600 -620mV/-0.62V SOT-23/SC-59 marking T2 switch/ driver
SOT-23/CP
Sanyo
06+3Knopb
Description: PNP Transistor Features: Low Collector Saturation Voltage High DC Current Gain High Reliability High Voltage High Speed Switching Low Noise Complementary to 2SD1803 SOT-23/CP Pac
2SB1295-6 PNP transistors(BJT) -15V -800mA/-0.8A 300MHz 200~400 -200mV/-0.2V SOT-23/CP marking UL6 low-frequency general amplifier
SOT-23/SC-59
NEC
05+
Description: The 2SC3735 is a NPN silicon epitaxial transistor manufactured by NEC. Features: High breakdown voltage Low collector-emitter saturation voltage High current gain Low noise
2SC3735 NPN Transistors(BJT) 40V 200mA/0.2A 750MHz 100~200 250mV/0.25V SOT-23/SC-59 marking B35 fast switch
SOT-23/SC-59/MPAK
Hitachi
05+
Description: 2SC2618 is a NPN silicon epitaxial transistor manufactured by Hitachi. Features: * High breakdown voltage * High current gain * Low collector-emitter saturation voltage Applications: *
2SC2618 NPN Transistors(BJT) 35V 500mA/0.5A 60~120 600mV/0.6V SOT-23/SC-59/MPAK marking RB low-frequency amplifier
SOT-23/SC-59
Panasonic
05+
Description: 2SD1328 is a NPN silicon epitaxial planar transistor manufactured by Panasonic. Features: - Low collector-emitter saturation voltage - High current gain - High transition frequency - Hig
2SD1328 NPN Transistors(BJT) 25V 500mA/0.5A 200MHz 200~800 130mV/0.13V SOT-23/SC-59 marking 1D lowvoltage amplifier
SOT-23/SC-59
Nec/renesas
12+ROHS
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage VCEO - - 100 V IC = 5mA, IB = 0mA Emitter-Base Voltage VEBO - - 5 V IE = 50mA Collector Current IC - - 100 mA VCE = 1V
2SB736A PNP transistors(BJT) -80V -300mA/-0.3A 100MHz 250~400 -600mV/-0.6V SOT-23/SC-59 marking B55 radio audio frequency amplifier
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