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Home > Elec-component > Modules > IGBT
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MODULE
Mits
00+
CM200DY-24NF is a module manufactured by Mitsubishi. It is a 200A, 600V, 3-phase, IGBT module. It has a high power density and is suitable for use in motor control, inverter, UPS, and other applicatio
Type = Igbt Module ;; Voltage = 1200V ;; Current = 200A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves =
Stock:2000
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MODULE
Toshiba
Description: This is a high voltage insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. Features: * High voltage rating of 1200V * Low on-state resistance of 0.6 ohms * High curr
Vces (volts) = 1200 ;; Ic (amps) = 100 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info
Stock:2000
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MODULE
Parameter Description Value Part Number Unique identifier for the component MG300Q2YS43 Type Type of electronic component MOSFET Technology Manufacturing technology Silicon Polarity Polar
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Stock:2000
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MODULE
Eupec
Description: The BSM100GP60 is a high-performance insulated-gate bipolar transistor (IGBT) module from EUPEC. It is designed for use in high-power applications such as motor drives, welding, and unint
IGBT-Modules
Stock:2000
Minimum:1
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MODULE
Semikron
00+
Description: The SKM400GA123D is a three-phase, insulated-gate bipolar transistor (IGBT) module from Semikron. It has a maximum collector-emitter voltage of 1200V and a maximum collector current of 40
SEMITRANS IGBT Modules New Range
Stock:2000
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MODULE
Infineon Technologies AG
CM75TJA-24FA is a module produced by Infineon Technologies. It is a three-phase brushless DC motor driver module with integrated power MOSFETs and a microcontroller. Description: The CM75TJA-24FA is
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Stock:2000
Minimum:1
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MODULE
Eupec
The FS150R12KT3 is a three-phase insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed for use in medium-voltage applications, such as motor drives, UPS systems, and re
IGBT-Module
Stock:2000
Minimum:1
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MODULE
Toshiba
Parameter Description Value Part Number Component Identifier MG150J2YS50 Type Device Type MOSFET Package Encapsulation Type TO-220 VDS (Max) Drain-Source Voltage 150 V VGS (Max) Gate-So
N channel IGBT
Stock:2000
Minimum:1
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MODULE
IXYS Corporation
The VUB145-16NOXT is a high voltage module manufactured by IXYS Corporation. It is a three-phase, full-wave, bridge rectifier module with a maximum voltage rating of 1500V and a maximum current rating
BRIDGE RECT 3P 1.6KV 150A E2
Stock:2000
Minimum:1
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MODULE
MIT
Parameter Symbol Min Typical Max Unit Input Voltage VIN 8 - 36 V Output Voltage VOUT 12 - 12 V Output Current IOUT - 20 - A Efficiency η - 92 - % Switching Frequency fSW - 200 - kHz N
240 x 128 pixel format, CFL Backlight with power harness
Stock:2000
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MODULE
MIT
Description: CM300DY-12NF is a power module manufactured by Mitsubishi. It is designed for use in inverters, converters, and servo applications. The device contains a three-phase bridge circuit inclu
HIGH POWER SWITCHING USE
Stock:2000
Minimum:1
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MODULE
Eupec
FS225R12KE3 is a module manufactured by EUPEC. It is an insulated-gate bipolar transistor (IGBT) module with a reverse blocking thyristor (RBT) and a fast recovery diode (FRD). It is designed for use
IGBT Modules up to 1200V SixPACK; Package: AG-ECONOPP-1; IC max: 225.0 A; VCEsat typ: 1.7 V; Configuration: SixPACK; Technology: IGBT3; Housing: EconoPACK? +;
Stock:2000
Minimum:1
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MODULE
Toshiba
00+
Description: This is a three-phase brushless motor driver module manufactured by Toshiba. It is designed to drive three-phase brushless motors with a maximum output current of 150A. Features: High-
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Stock:2000
Minimum:1
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MODULE
Description: The FP35R12W2T4-B11 is a three-phase inverter module from Infineon Technologies. It is designed to be used in motor drives and other power conversion applications. Features: - Maximum ou
Stock:2000
Minimum:1
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MODULE
Fairchil
15+
Fairchild FSAM30SH60A is a 600V Fast Switching Diode Module that features high surge capability and low power losses. It is designed for use in switching applications such as motor control, welding an
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Stock:2000
Minimum:1
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MODULE
Eupec
Description: The BSM35GD120DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It has a maximum operating voltage of 1200V, a maximum collector current of 350A, and a maximum collect
High Efficient Rectifier Diodes
Stock:2000
Minimum:1
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MODULE
Eupec
Description: The FS100R12KE3 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is designed to provide high-speed switching performance and low on-state losses. Features:
Technische Information / technical information
Stock:2000
Minimum:1
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MODULE
Semikron
Description: SKM152GA123 is a three-phase bridge rectifier module manufactured by Semikron. Features: Low forward voltage drop Low reverse current leakage High surge current capability High temper
15W DC-DC Regulated Single Output Converter
Stock:2000
Minimum:1
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MODULE
Sanrex
Description: The FDF60BA60 is a 600V, 60A fast recovery diode module manufactured by SanRex. Features: - Low forward voltage drop - Low reverse leakage current - High surge capability - High reliabil
DIODE MODULE F.R.D
Stock:2000
Minimum:1
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MODULE
Infineon Technologies AG
Description: The FP75R06KE3 is an N-channel MOSFET module from Infineon Technologies. It is a high-voltage, low-loss, and low-gate-charge MOSFET module. Features: Low on-state resistance High bloc
Stock:2000
Minimum:1
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