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Description
VRRM = 1700
Io (amps) = 0.5
Vces (volts) = 1700
Ic (amps) = 360
Vce (sat) Max = 4.5
Additional Information =
Title
1700V IGBT Modules
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Some Part number from the same manufacture
Some Part number from the same manufacture Toshiba America Electronic Components, Inc. |
MG400J1US51 Vces (volts) = 600 ;; Ic (amps) = 400 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1 ;; Additional Information = More Info |
MG400J2YS50 |
MG400Q1US41 Vces (volts) = 1200 ;; Ic (amps) = 400 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info |
MG400Q1US51 Vces (volts) = 1200 ;; Ic (amps) = 400 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6 |
MG400V2YS60A |
MG500Q1US1 Silicon N-channel Igbt GTR Module For High Power Switching, Motor Control Applications |
MG500Q1US41 Vces (volts) = 1200 ;; Ic (amps) = 500 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info |
MG50J1BS11 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.6 |
MG50J1ZS40 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 3.5 ;; Ton (usec) = 0.6 ;; Toff (usec) = 1 |
MG50J1ZS50 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = .80 ;; Toff (usec) = 1.0 |
MG50J2YS50 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1 ;; Additional Information = More Info |
MG50J6ES50 |
MG50JES50 GTR Module Silicon N Channel Igbt |
MG50Q1BS11 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.8 |
MG50Q1ZS50 |
MG50Q2YS40 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info |
MG50Q2YS50 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6 |
MG50Q2YS50A |
MG50Q6ES40 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info |
MG50Q6ES51 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6 |
MG50Q6ES51A |
015A3.6 : Diode Silicon Epitaxial Planar Type 2SC3421 : NPN Epitaxial Type ( Audio Frequency Power Amplifier Applications ) SD-M6403BX : SD Card Capacity = 64MB ;; Package Size (LxWxH) = 32mm X 24mm X 2.1mm TC35273 : MPEG-4 CODEC MPEG-4 Audiovisual Lsi TC74LCX163245FT : 16-bit Dual Supply Boltage Interface Bus Transceiver TC74VHC02F : CMOS/BiCMOS->VHC/VHCT/74V1 Family->Low Voltage Quad 2-input NOR GATE TC75W51FK : Dual Operational Amplifier TC7MAR2245FK : VCX Equivalent Function = Low-voltage Octal Bus Transceiver With 3.6 V Tolerant Inputs And Outputs ;; Features = 26 Ohm Series Resistors on Outputs. VCC = 1.8~3.6 : TPD = 4.4 NS (max) TPD1030F : Function = Protect-mos ;; Main Characteristics = 40V, 0.6 Ohm ;; Package = SOP-8 ;; Main Application = Motor, Solenoid, Lamp Driver ;; Feature = Protection U30GWJ2C48C : Schottky Barrier Diodes (SBDs) VRRM (V) = 40 ;; Vfm(max) (V) = 0.55 ;; If(av) (Amps) = 30 ;; Package = TO-220FL ;; Feature = TD62083 : 8ch Darlington Sink Driver |
Same catergory
Same catergory |
2SC3872 : NPN. Silicon NPN Triple Diffusion Planar Type ( For High Breakdown Voltage High-speed Switching ). BUL63A : Screening Options Available = ;; Polarity = NPN ;; Package = TO251 ;; Vceo = 300V ;; IC(cont) = 10A ;; HFE(min) = 25 ;; HFE(max) = - ;; @ Vce/ic = 5V / 1A ;; FT = 20MHz ;; PD = 25W. CM400HA-12H : 400 Amp Igbt Module For High Power Switching Use Insulated Type. : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. : Low Drive Power. IRFE9110 : -100V Single P-channel Hi-rel MOSFET in a 18-pin LCC Package. The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific. MMBTA42 : NPN High Voltage Amplifier. This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage *These ratings are limiting values above which the serviceability of any semiconductor. NTE6084 : Silicon Rectifier Schottky Barrier. Peak Repetitive Reverse Voltage 45V. Average Rectified Forward Current 30A.. SD10100YT : Schottky Barrier Rectifier ( Voltage - 20 to 100 Volts Current - 10.0 Amperes ). IRFHS9351TRPBF : -30V Dual P-Channel HEXFET Power MOSFET In A PQFN 2mm X 2mm Package -30V Dual P-Channel HEXFET Power MOSFET in a PQFN 2mm x 2mm package. APTC90SKM60CT1G : 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 0.0600 ohms ; Package Type: ROHS COMPLIANT, SP1, 12 PIN ; Number of units in IC: 1. BT234X-600D : 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB. s: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Package Type: TO-220, PLASTIC, TO-220F, FULLPACK-3 ; Pin Count: 3 ; VDRM: 600 volts ; IT(RMS): 4 amps. JANHC1N6391 : 25 A, 45 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: DIE-2 ; Number of Diodes: 1 ; VRRM: 45 volts ; IF: 25000 mA. MC2D118K050S : CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 50 V, 1100 uF, CHASSIS MOUNT. s: General : Polarized ; Capacitance Range: 1100 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Leakage Current: 15 microamps ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -55 to 85 C (-67 to 185 F). NTCDP40203LG202HC : RESISTOR, TEMPERATURE DEPENDENT, NTC, 20000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole ; Resistance Range: 20000 ohms ; Operating Temperature: -40 to 165 C (-40 to 329 F). WBCR : RESISTOR, THIN FILM, 0.25 W, 0.1 - 10 %, 25; 50; 100; 250 ppm, 10 ohm - 1000000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 75 volts ; Operating Temperature: -55 to 175 C (-67 to 347 F). 1330LEMAA05MAN0110 : CAP,AL2O3,33UF,35VDC,20% -TOL,20% +TOL. 22DGQ045D : 26 A, 45 V, SILICON, RECTIFIER DIODE. s: Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 26000 mA ; Package: HERMETIC SEALED PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2. 2SK3480-S-AZ : 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0360 ohms ; PD: 1500 milliwatts ; Package Type: FIN CUT, MP-25, 3 PIN ; Number of units in IC: 1. 933641020127 : 9 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC. s: Package: PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 400 volts ; IF: 9000 mA ; trr: 0.0600 ns ; RoHS Compliant: RoHS. |
241 buyer reviews from United Kingdom
Karen Scott
Length of registration:7 years
This integrated circuit is great! It is very easy to install and it works perfectly. I have had no issues with it and it has been reliable and consistent. Highly recommend this product!
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03/17/2023
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MG360V1US41
MG360V1US41 has several brands around the world that may have alternate names for MG360V1US41 due to regional differences or acquisition. MG360V1US41 may also be known as the following names:
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