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Product video Product Picture
MG360V1US41 VRRM = 1700 <br/><br/> Io (amps) = 0.5 <br/><br/> Vces (volts) = 1700 <br/><br/> Ic (amps) = 360 <br/><br/> Vce (sat) Max = 4.5 <br/><br/> Additional Information =
  • MG360V1US41
  • MG360V1US41
  • MG360V1US41
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MG360V1US41

USED

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Description

VRRM = 1700

Io (amps) = 0.5

Vces (volts) = 1700

Ic (amps) = 360

Vce (sat) Max = 4.5

Additional Information =

Title

1700V IGBT Modules

  • ECAD Module
  • Manufacturer Part Number: MG360V1US41
  • Brand: Toshiba
  • Package / Case: MODULE
  • Category: Discrete Semiconductor
  • Warranty: 100% Perfect Functions

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

ECAD Module

Product Attributes

  • Description: The MG360V1US41 is a Toshiba IGBT module designed for use in motor control applications. It features a 600V IGBT with a maximum collector current of 360A. Features: - 600V IGBT - Maximum collector current of 360A - Low switching loss - High speed switching - Low noise - High reliability Applications: The MG360V1US41 is designed for use in motor control applications such as AC servo motors, AC induction motors, and brushless DC motors. It is also suitable for use in power supplies, UPS systems, and other power conversion applications. (For reference only)

Some Part number from the same manufacture

Some Part number from the same manufacture Toshiba America Electronic Components, Inc.
MG400J1US51 Vces (volts) = 600 ;; Ic (amps) = 400 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1 ;; Additional Information = More Info
MG400J2YS50
MG400Q1US41 Vces (volts) = 1200 ;; Ic (amps) = 400 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info
MG400Q1US51 Vces (volts) = 1200 ;; Ic (amps) = 400 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6
MG400V2YS60A
MG500Q1US1 Silicon N-channel Igbt GTR Module For High Power Switching, Motor Control Applications
MG500Q1US41 Vces (volts) = 1200 ;; Ic (amps) = 500 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info
MG50J1BS11 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.6
MG50J1ZS40 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 3.5 ;; Ton (usec) = 0.6 ;; Toff (usec) = 1
MG50J1ZS50 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = .80 ;; Toff (usec) = 1.0
MG50J2YS50 Vces (volts) = 600 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1 ;; Additional Information = More Info
MG50J6ES50
MG50JES50 GTR Module Silicon N Channel Igbt
MG50Q1BS11 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.8
MG50Q1ZS50
MG50Q2YS40 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info
MG50Q2YS50 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6
MG50Q2YS50A
MG50Q6ES40 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info
MG50Q6ES51 Vces (volts) = 1200 ;; Ic (amps) = 50 ;; Vce (sat) Max = 3.6 ;; Ton (usec) = 0.2 ;; Toff (usec) = 0.6
MG50Q6ES51A

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IRFE9110 : -100V Single P-channel Hi-rel MOSFET in a 18-pin LCC Package. The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific.

MMBTA42 : NPN High Voltage Amplifier. This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage *These ratings are limiting values above which the serviceability of any semiconductor.

NTE6084 : Silicon Rectifier Schottky Barrier. Peak Repetitive Reverse Voltage 45V. Average Rectified Forward Current 30A..

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APTC90SKM60CT1G : 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 900 volts ; rDS(on): 0.0600 ohms ; Package Type: ROHS COMPLIANT, SP1, 12 PIN ; Number of units in IC: 1.

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JANHC1N6391 : 25 A, 45 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: DIE-2 ; Number of Diodes: 1 ; VRRM: 45 volts ; IF: 25000 mA.

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    241 buyer reviews from United Kingdom

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    Karen Scott

    MG360V1US41
    us United States

    Length of registration:7 years

    This integrated circuit is great! It is very easy to install and it works perfectly. I have had no issues with it and it has been reliable and consistent. Highly recommend this product!

    0

    0

    Reply0

    03/17/2023

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    • MG360V1US41 VRRM = 1700

      Io (amps) = 0.5

      Vces (volts) = 1700

      Ic (amps) = 360

      Vce (sat) Max = 4.5

      Additional Information =
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