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Home > Elec-component > Modules > IGBT
Utsource
Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCE - - 1200 V Maximum voltage between collector and emitter Collector Current IC - - 25 A Maximum current through the
Stock:2000
Minimum:1
Standard delivery
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MODULE
Semikron
21+
Parameter Symbol Min Typ Max Unit Notes Supply Voltage VDD 2.7 - 5.5 V Output Current IOUT - 300 500 mA Continuous Operating Temperature TOPR -40 - 85 °C Storage Temperature TSTG -55 -
Stock:2000
Minimum:1
Standard delivery
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Parameter Symbol Min Typ Max Unit Description Blocking Voltage V(BR)DSS - 1200 - V Drain-Source Breakdown Voltage Continuous Drain Current ID - - 75 A Continuous Drain Current at Tc=25°C Po
Stock:2000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
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MODULE
Fuji Electric
18+
2MBI200U2A-060-50 is a 200A/600V IGBT module manufactured by Fuji Electric. It features a low saturation voltage, high speed switching, and high reliability. This module is suitable for use in motor c
Stock:2000
Minimum:1
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IGBT
On Semiconductor
19+
Parameter Value / Description Product Name FNA41560T2/AIR CONDITIONING MODULE Part Number FNA41560T2 Function Air Conditioning Module Operating Voltage 12V DC (±10%) Current Consumption
Stock:5000
Minimum:1
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MODULE
Mitsubishi
05
Parameter Description Part Number CM100TU-24F Type Thyristor Triac Mounting Type Through Hole Package / Case TO-220-3 On-State Current (IT RMS) 100A (rms) Repetitive Peak Off-State Vo
Stock:2000
Minimum:1
Standard delivery
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IGBT
Fuji Electric
19+
Parameter Symbol Min Typ Max Unit Notes Rated Voltage VDS - 1200 - V Continuous Drain Current (Tc=25°C) ID - 75 - A Continuous Drain Current (Tc=100°C) ID - 50 - A Pulse Drain Current
Stock:2000
Minimum:1
Standard delivery
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TO-247
International Rectifier
Parameter Value Unit Part Number IRG4PC40W - Package TO-247 - Maximum Drain-to-Source Voltage (VDS(max)) 600 V Continuous Drain Current (ID) at 25°C 27 A Pulsed Drain Current (IDM) at 2
Stock:5000
Minimum:1
Standard delivery
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MODULE
Mitsubishi
14+
Parameter Description Value Part Number Component Identifier CM15MD-24H Type Device Type Relay Coil Voltage Operating Voltage for the Coil 24V DC Contact Form Configuration of Relay Conta
Stock:2000
Minimum:1
Standard delivery
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MODULE
Fuji Electric
23+
Parameter Symbol Min Typ Max Unit Description Blocking Voltage V_B - 600 - V Maximum repetitive peak off-state voltage On-State Voltage V_T 1.7 - 2.0 V On-state forward drop at specified curr
Stock:2000
Minimum:1
Standard delivery
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Stock:2000
Minimum:1
Standard delivery
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MODULE
Parameter Symbol Min Typ Max Unit Description Voltage Rating (Collector-Emitter) VCEO - 1200 - V Maximum voltage between collector and emitter with the gate open. Voltage Rating (Gate-Emitter
Stock:2000
Minimum:1
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DIP25
STMicroelectronics
134
Parameter Description Value Part Number Unique identifier for the component GIPS10K60T Type Type of device IGBT Voltage Rating Maximum voltage the device can handle 600V Current Rating Ma
Stock:2000
Minimum:1
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TO-247
Infineon Technologies AG
Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCEO - 600 - V Maximum voltage between collector and emitter with the base open. Collector-Base Voltage VCBO - 650 - V
Stock:10000
Minimum:10
Standard delivery
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TO-264
FSC
n/a
Parameter G60N90 G60N90DG3 Type N-channel MOSFET N-channel MOSFET Voltage (Vds) 600 V 600 V Current (Ids) 90 A 90 A Power Dissipation (Ptot) - - Rds(on) - - Gate Charge (Qg) - - Pac
Stock:10000
Minimum:1
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MODULE
Semikron
2020+
Parameter Symbol Min Typ Max Unit Rated Current IF - 330 - A Peak Surge Current IFSM - 800 - A Forward Voltage Drop VF 1.5 2.2 3.0 V Reverse Blocking Voltage VBR 16 - - V Junction Tempe
Stock:2000
Minimum:1
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TO-220
Infineon Technologies AG
Parameter Symbol Min Typical Max Unit Description Breakdown Voltage V(BR)DSS - 600 - V Drain-to-Source Breakdown Voltage Drain Current ID - 15 - A Continuous Drain Current at Tc = 25°C Puls
Stock:10000
Minimum:10
Standard delivery
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MODULE
Infineon Technologies AG
2023+
Parameter Symbol Min Typ Max Unit Notes Rated Voltage VRRM - 1200 - V Rated RMS Current IC - 300 - A Reverse Recovery Time trr - 80 - ns Forward Voltage Drop VF - 1.7 - V @ 300A Jun
Stock:2000
Minimum:1
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MODULE
Eupec
Below is the parameter table and instructions for the BSM50GX120DN2, a high-performance IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. BSM50GX120DN2 Parameter Table Parameter
Stock:2000
Minimum:1
Standard delivery
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MODULE
Semikron
2012+
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage V CES - - 1200 V Emitter-Collector Voltage V ECS - - 1200 V Gate-Emitter Voltage V GES -30 - 30 V Continuous Coll
Stock:2000
Minimum:1
Standard delivery
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