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Utsource
SOD-123/1206
Vishay Siliconix
06NOPB
1N4148W-GS08 is a surface mount, high-speed switching diode manufactured by Vishay. It is a small signal diode with a SOD-123/1206 package. Description: The 1N4148W-GS08 is a high-speed switching di
1N4148W-GS08 Switching Diodes 75V 150mA/0.15A SOD-123/1206 marking A2 highspeed switch
SOT-23/SC-59/SMT3
ROHM Semiconductor
05+NOPB2500
Description: The DTC114ECA is a small signal NPN transistor manufactured by ROHM Semiconductor. Features: Low collector-emitter saturation voltage High current transfer ratio High speed switchi
DTC114ECA NPN Bipolar Digital Transistor (BRT) 50mA 10k 10k SOT-23/SC-59/SMT3 marking 24
SOT-323/SC-70/USM
KEC
05+
Parameter Description Value Part Number Full Part Number KTC4075-GR Function Type of Device Low Dropout Linear Regulator (LDO) Input Voltage Range Operating Input Voltage Range 2.7V to 5.5V
KTC4075-GR NPN Transistors(BJT) 60V 150mA/0.15A 80Mhz 70~700 SOT-323/SC-70/USM marking L6 switch
SOT-323/SC-70/UMT3
ROHM Semiconductor
10NOPB
2SC4081UB NPN Transistors(BJT) 60V 150mA/0.15A 180MHz 120~270 400mV/0.4V SOT-323/SC-70/UMT3 marking BQ
SOT-323/SC-70
Panasonic
10+
Description: The DRC5123J0L is a surface mount NPN transistor manufactured by Panasonic. It is housed in an SC-70/SOT-323 package and has a collector current of 150mA. Features: Collector-emitter vo
DRC5123J0L NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 2.2k 47k gain80 SOT-323/SC-70 marking N4
SOT-23/SC-59
KEC
00+
Description: NPN Epitaxial Planar Silicon Transistor Features: High DC Current Gain Low Collector-Emitter Saturation Voltage High Transition Frequency Suitable for AF and RF Amplifier Appl
2SC3875SY NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 120~240 100mV/0.1V SOT-23/SC-59 marking ALY generalswitch
SOT-23/SC-59
Infineon Technologies AG
05+
Package: SOT-23/SC-59 Manufacturer: Infineon Description: The BAR74 is a silicon PIN diode designed for use in RF switching applications. Features: Low capacitance Low series resistance High isol
BAR74 Switching Diodes 50V 250mA/0.25A SOT-23/SC-59 marking JB highspeed switch
SOD-123/1206
Vishay Siliconix
04NOPB
Description: The 1N4148W-GS18 is a high-speed switching diode with a glass passivated junction. Features: Low forward voltage drop High current capability High reliability Low reverse leakage Hi
1N4148W-GS18 Switching Diodes 75V 150mA/0.15A SOD-123/1206 marking A2 highspeed switch
SOT-523
Nxp/philips
01+
Description: The BC846W is a PNP general-purpose transistor from NXP/Philips. Features: - Low current (max 100 mA) - Low voltage (max 45 V) - High gain Applications: - Switching - Amplifica
BC846W NPN Transistors(BJT) 80V 100mA/0.1A 100MHz 100~450 600mV/0.6V SOT-523 marking 1D generalswitch and amplifier
SOT-23/SC-59
05+3KNOPB
Parameter Description Value/Range Part Number - RN2425 Type - Low-Noise RF Amplifier Frequency Range Operating frequency range 2.4 GHz to 2.5 GHz Gain Gain at 2.45 GHz 20 dB Noise Figur
RN2425 PNP Bipolar Digital Transistor (BRT) -50V -800mA/0.8A 90 0.2W/200mW SOT-23/SC-59 marking RE switch inverter interface driver circuit
SOD323/0805-3V
11+ROHS
Description: 02DZ3.0-Z is a SOD323/0805-3V Zener Diode. Features: Low profile package High temperature soldering guaranteed: 260°C/10s at terminals High temperature stability Low leakage current
02DZ3.0-Z Zener Diodes 3V 200mW/0.2W SOD323/0805-3V marking 3Z0 Constant-Voltage Regulation/Reference Voltage
SOD80/LL34-19v
Vishay Siliconix
10NOPB
Description: The TZM5249B-GS08 is a Zener diode that is designed to operate in a wide range of applications. It is a low-power, low-voltage device that is designed to provide a stable voltage referenc
TZM5249B-GS08 Zener Diodes 19V 500mW/0.5W SOD80/LL34-19v marking high stability/Low reverse current level
DO-213AB
11nopb
Parameter Description Value Part Number SM4004 Function 4-Channel Solid State Relay (SSR) Input Voltage Operating Range 3V to 32V DC Input Current Maximum 10mA Output Voltage Maximum
SM4004 rectifiers 1A 1.1V DO-213AB
SOT-23/SC-59
On Semiconductor
05+
Description: N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Low Output Capacitance - High Speed Switching - SOT
MMUN2134LT1 PNP Bipolar Digital Transistor (BRT) -50V -100mA/-0.1A 130 0.4W/400mW SOT-23/SC-59 marking A6L switch inverter interface driver circuit
SOD323/0805-12V
NEC
06NOPB
Description: RD12S is a SOD323/0805-12V diode manufactured by NEC. Features: Low forward voltage High surge current capability High reliability High temperature soldering guaranteed: 260°
RD12S Zener Diodes 12V 200mW/0.2W SOD323/0805-12V marking B2 122 constant voltage/constant current/surge absorber/low noise
SOT23-33V
Fairchild
10+ROHS
MMBZ5257B Zener Diodes 33V 225mW/0.225W SOT23-33V marking 81H
SOT-23/SC-59
Nxp/philips
04+1RNOPB
The 1PS181 is a PNP transistor manufactured by NXP/Philips in a SOT-23/SC-59 package. It is designed for use in high-speed switching applications. Features: * Low collector-emitter saturation voltage
1PS181 1 PAir Common Anode Switching Diodes 80V 125mA/0.125A SOT-23/SC-59 marking A3 highspeed switch
SOD323/SC-76/USC/0805
International Rectifier
04+
Description: The BAT54WS is a dual Schottky barrier diode, manufactured by Infineon Technologies, in a SOD323 (SC-76/USC/0805) package. Features: * Low forward voltage drop * Low reverse leakage curr
BAT54WS SBD Schottky Barrier Diodes 30V 200mA/0.2A 650mV/0.65V SOD323/SC-76/USC/0805 marking IR4s low forward voltage fast switch
SOT-23
Fairchild
10+ROHS
Description: N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Threshold Voltage - Fast Switching Speed - Low Input Capacitance - High Input Impedance - Low Outpu
KST4401MTF NPN 60V 0.6A 250MHZ HEF=40~300 SOT23 MARKING 2X
SOD80/LL34-36V
Vishay Siliconix
09NOPB
Parameter Symbol Min Typ Max Unit Notes Input Voltage VIN 2.7 - 5.5 V Output Voltage VOUT - 3.3 - V Fixed Output Current IOUT - 800 - mA Quiescent Current IQ - 20 - μA Efficiency (Ty
TZMB36-GS08 ZENER DIODES SOD80/LL34-36V
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