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国家代码
Utsource
SOT-23
Zetex/diodes
1716+PB
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage VCE - - 30 V Emitter-Base Voltage VEB -5.0 - - V Collector-Base Voltage VCB - - 30 V Continuous Collector Current IC - - 20
SOT-23
Zetex/diodes
1633+PB
Description: FMMT495TA is a PNP transistor manufactured by Zetex/Diodes Incorporated. Features: - Low collector-emitter saturation voltage - High current gain - Low noise - High switching speed - Hig
SOT-23
On Semiconductor
1320+PB
Parameter Symbol Conditions Min Typ Max Unit Continuous Drain Current ID TC = 25°C - 2.0 - A Pulse Drain Current ID(P) TC = 25°C, tP = 10 ms - 6.0 - A Drain-Source Breakdown Voltage BVDSS T
SOT-23
On Semiconductor
0617+PB
MUN2211T1G is a SOT-23 package N-Channel enhancement mode MOSFET manufactured by ON Semiconductor. Description: This MOSFET has an RDS(on) of 0.2Ω and a maximum drain current of 1.2A. Features: - L
SOT-323
On Semiconductor
2018+PB
Description: ESDR0502BT1G is an ultra-small surface mount Schottky rectifier diode with a SOT-323 package. Features: - Low forward voltage drop - Low power loss - High surge capability - High tempera
SOT-23
Vishay Siliconix
17+
Parameter Description Value Unit Device Type N-Channel Enhancement Mode MOSFET Package Type SOT-23 Maximum Drain Current Continuous Drain Current at TC = 25°C 1.6 A Maximum Gate Sourc
SOT-23
Vishay Siliconix
17+
Parameter Description Value Unit Device Type N-Channel Enhancement Mode MOSFET Package Type SOT-23 Maximum Drain Current Continuous Drain Current at TC = 25°C 1.6 A Maximum Gate Sourc
SOT-23
Vishay Siliconix
2017+PB
Parameter Description Value Part Number Full Part Number SI2309CDS-T1-GE3 Type Device Type N-Channel MOSFET Package Package Type TO-252 (DPAK) VDSS Drain-to-Source Voltage 60V RDS(on) O
sot-23
Vishay Siliconix
17+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS -55 - 55 V Maximum drain-to-source voltage Gate-Source Voltage VGS -8 - 8 V Maximum gate-to-source voltage Continuous
sot-23
Vishay Siliconix
17+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage VDS -55 - 55 V Maximum drain-to-source voltage Gate-Source Voltage VGS -8 - 8 V Maximum gate-to-source voltage Continuous
LL34
Vishay Siliconix
1112+PB
Parameter Symbol Min Typical Max Unit Notes Supply Voltage VDD 2.7 - 5.5 V Output Current IOUT - 200 - mA Continuous Operating Temperature TOPR -40 - 85 °C Storage Temperature TSTG -65
DO-201
On Semiconductor
18+
Description: Rectifier Diode, 3.0A, 1000V Features: - Low forward voltage drop - High surge current capability - High reliability - High temperature soldering guaranteed: 260°C/10 seconds at terminals
SOT-23
Semtech International
2018+PB
Description: Transient Voltage Suppressor (TVS) Diode Features: Low clamping voltage Low leakage current Fast response time High surge capability Low profile package RoHS Compliant Applicatio
SOT-23
Zetex/diodes
1703+PB
Description: NPN Bipolar Transistor Features: Low saturation voltage Low collector-emitter saturation voltage Low collector-emitter leakage current High hFE High current gain Low noi
sot-23
Vishay Siliconix
17+
Parameter Symbol Min Typical Max Unit Drain-Source Voltage VDS - 60 - V Gate-Source Voltage VGS -16 - 16 V Continuous Drain Current ID - 1.5 - A Pulse Drain Current IDpeak - 4.5 - A Pow
sot-23
Vishay Siliconix
17+
Parameter Symbol Min Typical Max Unit Drain-Source Voltage VDS - 60 - V Gate-Source Voltage VGS -16 - 16 V Continuous Drain Current ID - 1.5 - A Pulse Drain Current IDpeak - 4.5 - A Pow
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