请点击进入网站
Delivery Address
+ 添加地址
新的货运地址
*为了您能及时收到到货信息，请正确填写手机号。
国家代码
Utsource
DO-41
STMicroelectronics
1N4747A is a 1 Watt Zener diode with a 20V breakdown voltage. It is packaged in a DO-41 (ST) package, which is a standard axial leaded package. The 1N4747A is used in applications such as voltage reg
3000
SK
Parameter Symbol Conditions Min Typ Max Unit Maximum Repetitive Peak Reverse Voltage VRRM - - - 40 V Maximum DC Blocking Voltage VR - - - 40 V Maximum Average Rectified Forward Current (Tam
DO-214AA/SMB
Vishay Siliconix
Parameter Symbol Conditions Min Typ Max Unit Reverse Standoff Voltage Vrwm 16 V Maximum Clamping Voltage Vc Ipp = 20.8A 34.7 V Peak Pulse Current Ipp Tp = 10/1000μs 20.8 A Reverse
DO-41
MIC
Parameter Value Component Type Diode Part Number 1N4007 Maximum Repetitive Peak Reverse Voltage (VRRM) 1000V Maximum RMS Voltage 707V Maximum Average Forward Rectified Current (IF(AV))
DO-41
MIC
Description: The 1N5822 is a 3A, 40V Schottky Rectifier Diode with a low forward voltage drop and fast switching speed. Features: Low forward voltage drop High current capability High surge
DO-41
STMicroelectronics
1N4746A is a 1W 18V Zener Diode with a DO-41 (ST) package. It is designed for use in general purpose applications such as voltage regulation, voltage reference, and overvoltage protection. Features:
TO-92
10+
Parameter Symbol Min Max Unit Conditions Collector-Emitter Voltage VCEO - 80 V IC = 0.1A, TA = 25°C Collector-Base Voltage VCBO - 80 V IC = 0, TA = 25°C Emitter-Base Voltage VEBO - 5 V IE =
250
STMicroelectronics
The 1N4733A is a 5.1V, 1W Zener diode with a DO-41 (250 ST) package. It is designed for use in voltage regulation, surge suppression, and reverse-bias protection applications. Its low dynamic impedanc
Parameter Value Unit Device IRLR8726PBF Type MOSFET Package SO-8 VDS (Drain-Source Voltage) 30 V RDS(on) @ VGS=10V 1.4 mΩ ID (Continuous Drain Current) 59 A PD (Power Dissipation
DO-41
STMicroelectronics
1N4750A is a 1W Zener diode with a voltage of 12V. It is a DO-41 package with a glass passivated junction. Description: The 1N4750A is a 12V 1W Zener diode with a glass passivated junction. It has a
DO-214AA/SMB
Vishay Siliconix
19+
Parameter Symbol Min Typical Max Unit Reverse Standoff Voltage VRWM - 5.0 - V Maximum Clamping Voltage VC - - 7.6 V Peak Pulse Current (8/20μs) IPP - - 14 A Reverse Leakage Current IR - -
DO-41
STMicroelectronics
Parameter Symbol Value Unit Maximum Repetitive Peak Reverse Voltage V_RRM 360 V Maximum DC Blocking Voltage (Reverse) V_R 360 V Maximum Average Forward Rectified Current (T_A = 25°C) I_F(AV
13+
The TK6A50D is a 600V, 6A N-channel MOSFET produced by Toshiba. It is a surface mount device with a TO-220F package. Description: The TK6A50D is a N-channel MOSFET with a maximum drain-source voltage
DO-35
STMicroelectronics
Parameter Value Unit Type Zener Diode - Package DO-35 - Zener Voltage (Vz) 8.3 V Power Dissipation (Pd) 200 mW Operating Temperature (Tj) -65 to +150 °C Forward Current (If) 5 mA Re
DO-41
Do-41
1N4007 is a popular 1A general-purpose silicon rectifier diode with a peak repetitive reverse voltage of 1000V. It is typically used for power supply applications, such as rectifying AC to DC, and for
DO-41
STMicroelectronics
1N4753A is a 1.5A, 400V, axial leaded, glass passivated, single-phase silicon rectifier diode. Description: The 1N4753A is a high-reliability, single-phase, 400V, 1.5A silicon rectifier diode. It is
Parameter Value Type Zener Diode Part Number 1N4751ATR Zener Voltage (Vz) 12V Power Dissipation (Pz) 1W (1000mW) Maximum Current (Izm) 83mA Operating Temperature -65°C to +150°C Cas
停止生产专家，我们可以提供大量已经停止生产且难以找到的电子零件，以方便维修公司
库存
免费电话
(888) 766 5577 USA & 加拿大
+52 5515436027
+52 5515436028 墨西哥
+49 6931090199 德国
全球支付
全球物流
1 Million+ Like Utsource
Required
