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国家代码
Utsource
SOT-323/SC-70
Nxp/philips
05+
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Breakdown Voltage V(BR)CEO - - 50 V IC = 10 μA, T = 25°C Emitter-Base Breakdown Voltage V(BR)EBO - - 6 V IE = 10 μA, T = 25°C
BF547W NPN Transistors(BJT) 30V 50mA 800-1600MHz 40~250 SOT-323/SC-70 marking E2 UHF and oscillator and IF amplifier ultra high frequency tuner
SOT-23/SC-59
KEC
09nopb
Description: N-Channel Enhancement Mode MOSFET Features: - Low On-Resistance - Low Gate Charge - Fast Switching Speed - Low Input Capacitance - Low Threshold Voltage - RoHS Compliant Application: -
KTD1304 NPN Transistors(BJT) 25V 300mA/0.3A 60Mhz 200~800 250mV/0.25V SOT-23/SC-59 marking MAX radiomuting application
SOT-163/SM6/SOT-26
1151+ROHS
Parameter Symbol Conditions Min Typ Max Unit Supply Voltage VCC Operating 4.5 5.0 5.5 V Output Current IO Continuous - 200 - mA Quiescent Current IQ No Load - 0.5 - mA Output Voltage Drop
HN1C07F NPN+NPN Complex Bipolar Transistor 50V 500mA 70~240 SOT-163/SM6/SOT-26 marking 46 switch and digital circuit application
SOD-323/SC-76/0805
Infineon Technologies AG
05+
BAR63-03W PIN Doides 50V 100mA/0.1A SOD-323/SC-76/0805 G RF signal switch
SOT-363/SC-88/SC70-6
Nxp/philips
1128+ROHS
Description: The BAT74S is a dual Schottky diode with low forward voltage drop and fast switching speed. It is packaged in a SOT-363/SC-88/SC70-6 package. Features: - Low forward voltage drop - Fast
BAT74S SBD Schottky Barrier Diodes 30V 110mA/0.11A 1V SOT-363/SC-88/SC70-6 marking 74t fast switch low forward voltage
SOT-23/SC-59
12+63knopb 04+6Knopb
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage VCE - - 100 V Collector-Base Voltage VCB - - 100 V Emitter-Base Voltage VEB - - 5 V Collector Current IC - 3 5 A Base Cur
2SC3295-A NPN Transistors(BJT) 50V 150mA/0.15A 250MHz 600~1800 250mV/0.25V SOT-23/SC-59 marking PA radio amplifier switch application
SOT-23/SC-59
Sanyo
05+
3LN01C is a SOT-23/SC-59 package NPN transistor manufactured by SANYO. Description: This transistor is a NPN epitaxial planar type transistor designed for low frequency amplifier applications. Feat
3LN01C MOSFET N-Channel 30V 150mA/0.15A SOT-23/SC-59 marking YA low on-resistance/fast switch
SOT-723/VESM
12+ROHS
Description: SSM3K44MFV is a 3.3V voltage regulator with a low dropout voltage of 0.4V. Features: - Output voltage: 3.3V - Output current: 400mA - Dropout voltage: 0.4V - Operating temperature range:
SSM3K44MFV N Channel MOS 30V 0.1A VESM MARKING NT High Speed Switching Analog Switch
0805
AVX
05+
Description: TAJR106M006RNJ is an 0805-sized, radial-leaded, multilayer ceramic capacitor (MLCC) manufactured by AVX. Features: This capacitor has a capacitance of 10uF, a voltage rating of 6V, and a
DO-213AB
Vishay Siliconix
05+
Description: BYM10-1000-E3/96 is a high-speed, high-efficiency, surface-mount Schottky rectifier diode manufactured by Vishay. Features: * Low forward voltage drop * Low reverse leakage current * Hig
BYM10-1000-E3/96 rectifiers 1A 1000V DO-213AB
SOT-89/SC-62/MPT3
ROHM Semiconductor
10+nopb
Parameter Symbol Conditions Min Typ Max Unit Collector-Emitter Voltage VCE - - - 80 V Collector-Base Voltage VCB - - - 80 V Emitter-Base Voltage VEB - - - 5 V Collector Current IC - - - 3
2SD1664 NPN Transistors(BJT) 40V 1A 150MHz 180~390 150mV/0.15V SOT-89/SC-62/MPT3 marking DAR
SOT-523/SC-75
NEC
03/05+
Parameter Symbol Min Typ Max Unit Description Drain-Source Voltage V(DS) - - 450 V Maximum drain-to-source voltage Gate-Source Voltage V(GS) -20 - 20 V Maximum gate-to-source voltage Drain
2SK3107 MOSFET N-Channel 30V 100mA/0.1A SOT-523/SC-75 marking D1 fast switch/low on-resistance/4V drive
0805-102
Panasonic
05+
Description: The ECHU1H102GX5 is a 0805-sized, 10nF ceramic capacitor from Panasonic. Features: - Rated voltage: 50V - Capacitance tolerance: ±20% - Operating temperature range: -55°C to +125°C - Die
SOT-353/usv/SC70-5
10NOPB
RN47A5 is a surface mount NPN transistor manufactured by ROHM Semiconductor. It is housed in a SOT-353/USV/SC70-5 package and is designed for use in low-noise, high-speed switching applications. The
RN47A5 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 80/50 200mW/0.2W SOT-353/usv/SC70-5 marking 25 switching inverting interface driver circuit
SOT-23/SC-59
Siemens
05+
BSS284 is a N-channel enhancement mode MOSFET transistor manufactured by Siemens. It is a surface mount device with a SOT-23/SC-59 package. Description: BSS284 is a N-channel enhancement mode MOSFET
BSS284 MOSFET P-Channel -50V -130mA 5ohm SOT-23 marking SSD
SOT-23/SC-59
NEC
05+
Description: N-Channel MOSFET Package Type: SOT-23/SC-59 Manufacturer: NEC Features: Low on-resistance High speed switching High input impedance Low input capacitance Low gate charge Low thresh
2SK1133 MOSFET N-Channel SOT-23/SC-59 marking G11
SOT-523/SC-75/USM
NEC
04+
Description: 2SK3230 is an N-channel MOSFET transistor manufactured by NEC. Features: - Low on-resistance - Low gate charge - High speed switching - High voltage Applications: - DC-DC converters - M
2SK3230 JFET N-Channel 20v 0.2~0.45mA SOT-523 marking J6 IMPEDANCE CONVERTER
SOT-23/SC-59
NEC
05+
2SA1462 PNP transistors(BJT) -15V -50mA 1.8GHz 50~100 -90mV SOT-23/SC-59 marking Y33 highspeed switch
SMA/DO-214AC
Askey
05+PB
Description: SMA/DO-214AC Features: * Low profile package * High temperature soldering guaranteed: 260°C/10s * High surge capability * Lead free parts meet RoHS compliant Applications: * Automotive
B340A SBD Schottky Barrier Diodes 40V 3A 500mV/0.5V SMA/DO-214AC marking B340A rectifier low voltage high frequency inverter
SOT-163/SOT23-6/SC-74/SOT457
Nxp/philips
05+
Parameter Symbol Min Typical Max Unit Input Voltage VIN 4.5 - 5.5 V Output Voltage VOUT - 3.3 - V Output Current IOUT - 200 250 mA Quiescent Current IQ - 10 20 μA Dropout Voltage VDROP
1PS74SB23 Schottky barrier diode 25V 1A 450mV/0.45V SOT-163/SOT23-6/SC-74/SOT457 marking P1 fast switch
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