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Description
SELF-OSCILLATING HALF-BRIDGE DRIVER IC
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The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!！
| Parameter | Symbol | Min | Typical | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Supply Voltage | Vcc | 10 | - | 60 | V | Operating supply voltage range |
| Under-Voltage Lockout (UVLO) | Vuvlo | - | 8.4 | 10.5 | V | Threshold for UVLO (rising edge) |
| UVLO Hysteresis | Vhys | - | 1.1 | 1.3 | V | UVLO hysteresis |
| High-Side Driver Output Current | Iohs | - | 2.5 | 3.5 | A | Peak output current for high-side driver |
| Low-Side Driver Output Current | Iols | - | 3.5 | 4.5 | A | Peak output current for low-side driver |
| High-Side Driver Input Capacitance | Cih | - | 50 | 70 | pF | Input capacitance of high-side driver |
| Low-Side Driver Input Capacitance | Cil | - | 50 | 70 | pF | Input capacitance of low-side driver |
| Propagation Delay | Tpd | 30 | - | 90 | ns | Time delay from input to output transition |
| Propagation Delay Match | Tdm | - | 10 | 20 | ns | Difference in propagation delay between high-side and low-side drivers |
| Shutdown Current | Ishutdown | - | 0.5 | 1 | μA | Current consumption in shutdown mode |
| Operating Temperature Range | Toper | -40 | - | 125 | °C | Ambient temperature range for operation |
Supply Voltage:
Under-Voltage Lockout (UVLO):
Driver Output Current:
Input Capacitance:
Propagation Delay:
Propagation Delay Match:
Shutdown Current:
Operating Temperature:
Handling and Storage:
PCB Layout:
Testing:
Description
The IRS2153(1)D is based on the popular IR2153 self oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.
Features
● Integrated 600 V half-bridge gate driver
● CT, RT programmable oscillator
● 15.4 V Zener clamp on VCC
● Micropower startup
● Non-latched shutdown on CT pin (1/6th VCC)
● Internal bootstrap FET
● Excellent latch immunity on all inputs and outputs
● +/- 50 V/ns dV/dt immunity
● ESD protection on all pins
● 8-lead SOIC or PDIP package
● Internal deadtime
| QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
|---|---|---|---|
| ≥1: | US $1.87785 | US $1.69007 | US $1.69007 |
| ≥5: | US $1.25190 | US $1.12671 | US $5.63355 |
| ≥10: | US $1.12671 | US $1.01404 | US $10.14040 |
| ≥20: | US $1.09541 | US $0.98587 | US $19.71740 |
| ≥50: | US $1.06412 | US $0.95770 | US $47.88500 |
| ≥100: | US $1.03282 | US $0.92954 | US $92.95400 |
| ≥200: | US $1.00152 | US $0.90137 | US $180.27400 |
| ≥500: | US $0.98900 | US $0.89010 | US $445.05000 |
| ≥1000: | US $0.97022 | US $0.87320 | US $873.20000 |
Substitute (equivalent) Product
| Product Name | Description |
|---|---|
| IRS21532DSPBF | High-Voltage Floating Gate Driver, 8-Pin DFN Package, 4.5V to 500V Supply Voltage, 3A Peak Output Current |
| IRS21531SFPBF | High-Voltage Floating Gate Driver, 8-Pin SOIC Package, 4.5V to 500V Supply Voltage, 3A Peak Output Current |
| IRS21532SFPBF | High-Voltage Floating Gate Driver, 8-Pin SOIC Package, 4.5V to 500V Supply Voltage, 3A Peak Output Current |
| IRS21530DSPBF | High-Voltage Floating Gate Driver, 8-Pin DFN Package, 4.5V to 500V Supply Voltage, 2A Peak Output Current |
Product Usage
The IRS21531DSPBF is a high-voltage gate driver IC designed by Infineon Technologies. It is specifically tailored for driving power MOSFETs and IGBTs in various high-frequency switching applications. Here are some common circuits and applications where the IRS21531DSPBF is used:
Switch-Mode Power Supplies (SMPS):
Motor Control:
Inverters:
Lighting Applications:
Audio Amplifiers:
Battery Management Systems (BMS):
A typical application circuit for the IRS21531DSPBF in a half-bridge configuration might look like this:
Required+Vcc (e.g., 15V)
|
|---[Bootstrap Capacitor]---+----> Gate of High-Side MOSFET
| |
| |---[Bootstrap Diode]---+
| |
|---[IRS21531DSPBF]---+ +----> Source of High-Side MOSFET
| | |
| | |
| | +----> Drain of Low-Side MOSFET
| | |
| +---+ |
| | |
| +---[Gate Resistor]---+----> Gate of Low-Side MOSFET
| |
| +----> Source of Low-Side MOSFET
|
|---[Load (e.g., Inductor)]--->
In this circuit, the IRS21531DSPBF drives the gates of the high-side and low-side MOSFETs, allowing for efficient switching in a half-bridge configuration. The bootstrap capacitor and diode ensure that the high-side MOSFET can be driven even when its source is at a high potential relative to ground.
If you have a specific application or circuit in mind, feel free to provide more details, and I can offer more targeted advice!
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Returns are normally accepted when completed within 90 days from the date of the parcel delivered.
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Warranty
All UTSOURCE purchases have a 90 days money back return policy, plus a 100 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
IRS21531DSPBF
IRS21531DSPBF has several brands around the world that may have alternate names for IRS21531DSPBF due to regional differences or acquisition. IRS21531DSPBF may also be known as the following names:
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