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国コードVFBGA-54
Micron Technology
SDRAM Memory IC 64Mb (4M x 16) Parallel 167MHz 5.4ns 54-VFBGA (8x8)
Description: The MT48LC4M16A2B4-6A:J TR is a 4M x 16-bit x 4 Banks Dynamic RAM manufactured by Micron Technology. It is a 54-pin VFBGA (Very Fine Pitch Ball Grid Array) package. Features: 4M x 16-bi
在庫:10000
最小数量:1
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28-BSOJ (0.300", 7.62mm Width)
Idt, Integrated Device Technology
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 15ns 28-SOJ
在庫:10000
最小数量:2
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TSOP-66
Micron Technology
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 167MHz 700ps 66-TSOP
Description: The MT46V64M8P-6T IT:F is a 64Mb (8M x 8) Synchronous DRAM (SDRAM) organized as 4 banks of 4M x 16 bits. It is fabricated using Micron's high-performance CMOS technology. The device is d
在庫:10000
最小数量:2
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TSOP-54
Alliance Memory
SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5ns 54-TSOP II
Description: AS4C32M16SB-6TIN is a 32M x 16 bit high-speed CMOS static RAM organized as 4,194,304 words by 16 bits. Features: Fast access time: 6, 7, 10, 12, 15, 20, 25, 35, 45, 55, 70, 85, 100, 12
在庫:10000
最小数量:1
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Description: The MX25L6465EMI-10G is a 64Mb (8M x 8) Serial Flash memory device from Macronix. It is a 3V device that operates on a single 2.7V to 3.6V power supply. Features: 8M x 8 bit organizat
在庫:10000
最小数量:1
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48-DIP (0.600", 15.24mm)
Idt, Integrated Device Technology
SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K x 8) Parallel 35ns 48-PDIP
Description: The IDT7132SA35P is a high-speed, low-power, CMOS 8-bit buffer/line driver designed to be employed as a memory and address driver, clock driver, or bus-oriented transmitter/receiver. Fea
在庫:10000
最小数量:1
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TSOP86
Issi, Integrated Silicon Solution
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 86-TSOP II
在庫:10000
最小数量:1
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DIP-28
Microchip Technology
EEPROM Memory IC 256Kb (32K x 8) Parallel 150ns 28-PDIP
Description: The AT28C256E-15PC is a CMOS 256K (32K x 8) electrically erasable programmable read-only memory (EEPROM). Features: Low Power CMOS Technology Single 5V ±10% Power Supply Access
在庫:10000
最小数量:1
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DIP-28
Microchip Technology
EEPROM Memory IC 256Kb (32K x 8) Parallel 70ns 28-PDIP
Description: The AT28HC256E-70PI is a 28-pin, 8-bit CMOS electrically erasable programmable read-only memory (EEPROM) from Microchip Technology. It has a maximum operating voltage of 5.5V and a maxim
在庫:5000
最小数量:1
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CDIP-28
Idt, Integrated Device Technology
SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parallel 45ns 28-CerDip
Description: 4K x 9 Asynchronous FIFO Features: - 4K x 9 bit organization - Asynchronous FIFO - Three-state outputs - Programmable almost full and almost empty flags - Low power CMOS technology - Ava
在庫:2000
最小数量:1
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169-VFBGA
Micron Technology
FLASH - NAND Memory IC 128Gb (16G x 8) MMC 169-VFBGA
在庫:2000
最小数量:1
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在庫:10000
最小数量:1
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Description: The MX25L6408EZNI-12G is a 8-pin Quad Flat Non-Leaded (QFN) Flash Memory manufactured by Macronix. Features: 8-pin QFN package 8Mb (1Mb x 8) of memory Single voltage operat
在庫:10000
最小数量:2
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TSOP-48
Micron Technology
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 70ns 48-TSOP
Description: The JR28F064M29EWBA is a 64 Megabit (8 Megabyte) CMOS Flash Memory device from Micron Technology. It is a TSOP-48 package, with a 2.7V to 3.6V operating voltage range. Features:
在庫:2000
最小数量:1
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TSOP-24
ROHM Semiconductor
DRAM Memory IC 16Mb (4M x 4) Parallel 30ns 26-TSOP
Description: The MSM51V17405F-60T3-K is a 4Mbit (512K x 8-bit) CMOS Static RAM manufactured by ROHM Semiconductor. It is a TSOP-24 package and operates with a power supply voltage of 3.3V. Features:
在庫:10000
最小数量:1
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32-LCC (J-Lead)
Micron Technology
4 Mbit (512KB X8, Uniform BLOCK) Single Supply Flash Memory
Description: The M29F040B45K1 is a 4Mbit (512K x 8-bit) CMOS Flash Memory manufactured by Micron Technology. It is organized as 524,288 words by 8 bits and is fabricated with advanced CMOS EEPROM tech
在庫:10000
最小数量:1
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TSOP48
Renesas Electronics America
SRAM Memory IC 16Mb (2M x 8, 1M x 16) Parallel 70ns 52-TSOP II
Description: The R1LV1616RSD-7SI#S0 is a 16 Mbit (1M x 16bit) CMOS Static RAM manufactured by Renesas Electronics America. Features: Low power consumption: Active current: 45mA (max.), Standby curr
在庫:5000
最小数量:1
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TSOP28
Issi, Integrated Silicon Solution
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 45ns 28-TSOP I
Description: The IS62LV256AL-45TLI-TR is a low-power, high-performance CMOS static RAM organized as 32K x 8 bits. It is fabricated using ISSI's high-performance CMOS technology. Features: - Fast a
在庫:10000
最小数量:2
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64-TBGA
Micron Technology
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 70ns 64-TBGA (10x13)
在庫:10000
最小数量:1
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SOP
Cypress Semiconductor Corp
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 45ns 28-SOIC
Description: The STK15C88-NF45I is a low-power, low-voltage CMOS static RAM manufactured by Cypress Semiconductor Corporation. It is a 16K x 8 bit memory device, organized as 2K x 8 words. The device
在庫:10000
最小数量:1
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