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MODULE
NXP Semiconductors
1335+
The JN5168-001-M05,534 is a ZigBee module from NXP. It is a low-power, low-cost, 2.4 GHz IEEE 802.15.4 compliant radio module. It is designed for applications such as home and building automation, ind
TO-247
IXYS
05+
Description: IXKR40N60C is a high voltage MOSFET produced by IXYS. It is a TO-247 package with a drain-source voltage of 600V and a drain current of 40A. Features: Low gate charge Low on-state resi
MODULE
Semikron
05+
SKM75GB124D is a 1200V, 75A, 3-phase IGBT module from Semikron. It is designed for use in motor control, UPS, welding and other power applications. Description: The SKM75GB124D is a three-phase IGBT
Omron
18+
Parameter Value Product Type Relay Model G6K-2P-DC12V Coil Voltage 12V DC Coil Power Consumption 0.375W Coil Resistance 380Ω Contact Form SPDT (Single Pole Double Throw) Contact Mat
MODULE
International Rectifier
0045+
SINGLE PHASE BRIDGE Power Modules
MODULE
Mitsubishi
15+
Parameter Value Unit Part Number CM200DX-24S Type MOSFET Package TO-247 Maximum Drain Current 200 A Maximum Gate Source Voltage ±20 V Continuous Drain Current 150 A Power Dissipa
DIP4
SEP
Parameter Symbol Value Unit Maximum Repetitive Peak Reverse Voltage VRRM 600 V Maximum Average Forward Rectified Output Current (Tc=45°C) IF(AV) 3 A Maximum RMS Current (Tc=75°C) IRMS 4.2 A
MODULE
Mitsubishi
05+
Parameter Symbol Min Typ Max Unit Conditions Supply Voltage VCC 2.4 - 5.5 V - Operating Temperature Ta -40 - 85 °C - Storage Temperature Tstg -55 - 125 °C - Input Voltage (Digital) Vin(D)
H57
Mitsubishi
2018+
Parameter RA33H1516M1 RA33H1516M1-501 Capacitance 150 μF 150 μF Voltage Rating (DC) 35 V 35 V Ripple Current (Max) 2.7 A @ 100 kHz, 85°C 2.7 A @ 100 kHz, 85°C ESR (Max) @ 100 kHz 9 mΩ 9 m
MODULE
Mitsubishi
17+
Parameter Description Value Unit Type Surface Mount Inductor Part Number CM75RL-24NF DC Resistance (DCR) Maximum DCR 0.12 Ω Inductance Nominal Inductance 24 μH Current Rating Satura
MODULE
Vishay Siliconix
NA
Description: The KBU8J-E4/51 is a single-phase bridge rectifier module from Vishay. It has a maximum forward voltage of 8 V and a maximum reverse voltage of 50 V. It has an average forward current of
Bridge Rectifier 8A 600V KBU
MODULE
8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
MODULE
IXYS
15+
Parameter Value Unit Part Number MDD255-20N1 Type MOSFET Voltage Rating (Vds) 200 V Current Rating (Ids) 55 A Rds(on) 0.028 Ω Package Type TO-220 Operating Temperature -55 to +15
MODULE
Tyco
10+
P089A08 is a Tyco Electronics module. It is a surface mount, low profile, high current, single row, right angle, female header. It is designed for use in high density applications. It is suitable for
MODULE
Texas Instruments
1127
1.5 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR
MODULE
Mitsubishi
10+
Parameter Description Value Part Number Part number of the device PS21962-4N Type Type of component Power Switch Package Type Package type of the component SOIC-8 Input Voltage (Min) Mini
MODULE
GS
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
MODULE
Mitsubishi
89A
M57719L is a module manufactured by Mitsubishi. It is a power module with a maximum output of 600V/30A. It is used in power supplies, inverters, motor control systems, and other applications. It featu
135-145MHz 12.5V,14W,FM MOBILE RADIO
MODULE
International Rectifier
07+
The IRAMS10UP60B-S is an insulated-gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It is a 600V, 10A, single-phase, half-bridge module. It is designed for use in motor con
Parameter Symbol Min Typ Max Unit Conditions Breakdown Voltage V(BR)DSS - 600 - V Forward Voltage VF - 1.8 - V @ IF = 5 A Reverse Recovery Time trr - 45 - ns @ IF = 5 A, dIT/dt = 100 A/μs
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