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国コード
Utsource
MODULE
Semikron
2012+
Parameter Symbol Conditions Min Typ Max Unit Collector-Emitter Voltage V CES 1200 V Emitter-Collector Voltage V ECS 1200 V Gate-Emitter Voltage V GES -20 20 V Continuous Collector
Parameter Symbol Min Typ Max Unit Description Blocking Voltage V(BR)DSS - 1200 - V Drain-Source Breakdown Voltage Continuous Drain Current ID - - 75 A Continuous Drain Current at Tc=25°C Po
MODULE
Fuji Electric
18+
2MBI200U2A-060-50 is a 200A/600V IGBT module manufactured by Fuji Electric. It features a low saturation voltage, high speed switching, and high reliability. This module is suitable for use in motor c
MODULE
Mitsubishi
15+
Below is the parameter table and instructions for the CM100TU-24H Thyristor: Parameter Table Parameter Symbol Value Unit Rated RMS Voltage VDRM 1000 V Repetitive Peak Off-State Voltage VDRM 1
TO-247
International Rectifier
Parameter Value Unit Part Number IRG4PC40W - Package TO-247 - Maximum Drain-to-Source Voltage (VDS(max)) 600 V Continuous Drain Current (ID) at 25°C 27 A Pulsed Drain Current (IDM) at 2
TO-247
International Rectifier
Parameter Value Unit Part Number IRG4PC40W - Package TO-247 - Maximum Drain-to-Source Voltage (VDS(max)) 600 V Continuous Drain Current (ID) at 25°C 27 A Pulsed Drain Current (IDM) at 2
MODULE
Fuji Electric
23+
Parameter Symbol Min Typ Max Unit Description Blocking Voltage V_B - 600 - V Maximum repetitive peak off-state voltage On-State Voltage V_T 1.7 - 2.0 V On-state forward drop at specified curr
DIP25
STMicroelectronics
134
Parameter Description Value Part Number Unique identifier for the component GIPS10K60T Type Type of device IGBT Voltage Rating Maximum voltage the device can handle 600V Current Rating Ma
MODULE
Fairchild
14+
Parameter Description Value Unit Part Number Full Name FPDB30PH60 - Type Package Type DPAK - Maximum Drain Current (Id) Continuous Drain Current 30 A Peak Pulse Drain Current (Idm) Peak P
TO-247
Infineon Technologies AG
Parameter Symbol Min Typ Max Unit Description Collector-Emitter Voltage VCEO - 600 - V Maximum voltage between collector and emitter with the base open. Collector-Base Voltage VCBO - 650 - V
MODULE
IXYS
15+
The IXYS DSEI2X101-12A is a dual SCR module with a blocking voltage of 1200V and a current rating of 10A. It is designed for use in power control applications such as motor control, power supplies, an
TO-264
FSC
n/a
Parameter G60N90 G60N90DG3 Type N-channel MOSFET N-channel MOSFET Voltage (Vds) 600 V 600 V Current (Ids) 90 A 90 A Power Dissipation (Ptot) - - Rds(on) - - Gate Charge (Qg) - - Pac
MODULE
Fuji Electric
18+
Parameter Description Value Part Number 7MBP50RA120-55 - Type IGBT Module - Voltage Rating (Vces) Collector-Emitter Breakdown Voltage 1200 V Current Rating (Ic) Continuous Collector Curre
MODULE
Semikron
15+
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage V CES 1250 V Emitter-Collector Voltage V ECS -5 V Gate-Emitter Voltage V GES -20 20 V Continuous Collector C
MODULE
Parameter Description Value Unit Device Type Description Dual N-Channel Enhancement Mode MOSFET - VDS Drain-to-Source Voltage 200 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Cu
module
Semikron
23+
Parameter Symbol Value Unit Test Conditions Rated Voltage VDRM 1200 V - Rated Current IC 200 A Tj = 25°C Continuous Forward Current IF(AV) 200 A TC = 80°C Peak Forward Current IFSM 600 A
MODULE
Infineon Technologies AG
2018+
Description: Infineon IGBT Module Features: Low switching losses Low conduction losses Low gate charge Short circuit withstand capability Very fast switching High temperature operation Low indu
TO-220
Infineon Technologies AG
Parameter Symbol Min Typical Max Unit Description Breakdown Voltage V(BR)DSS - 600 - V Drain-to-Source Breakdown Voltage Drain Current ID - 15 - A Continuous Drain Current at Tc = 25°C Puls
MODULE
Fuji Electric
15
Parameter Description Part Number 2MBI900VXA-120P-50 Type IGBT Module Voltage Rating (VDC) 900 V Current Rating (IC, AV) (A) 120 A (Average RMS Current) Switching Frequency Optimized fo
MODULE
Eupec
Below is the parameter table and instructions for the BSM50GX120DN2, a high-performance IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. BSM50GX120DN2 Parameter Table Parameter
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