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Country CodeINFINEON
Your search 35N60C3 and relate product result :19 items
Description: 600V, N-Channel MOSFET Features: Low gate charge Low on-state resistance Fast switching Avalanche rated RoHS compliant Applications: Switching applications Motor control Uninterru
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Description: 35N60C3 is an N-channel MOSFET produced by Infineon Technologies. Features: - Low on-resistance - Low gate charge - Low capacitances - Avalanche rated Applications: - Switching applicat
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Description: N-Channel MOSFET Features: Low gate charge Low on-state resistance High current capability Avalanche rated Improved dv/dt capability Fast switching Lead-free RoHS compliant Appl
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TO-247
Infineon Technologies AG
05+
N-Channel MOSFETs >500V…900V; Package: PG-TO247-3; VDS max: 600.0 V; Package: TO-247; RDSON @ TJ=25°C VGS=10: 100.0 mOhm; IDmax @ TC=25°C: 34.6 A; IDpuls max: 103.8 A;
Description: N-Channel MOSFET Features: Low gate charge Low on-state resistance High current capability Avalanche rated Improved dv/dt capability Fast switching Lead-free RoHS compliant Appl
Stock:10000
Minimum:2
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Description: SPW35N60C3 is a N-channel MOSFET produced by Infineon Technologies. It is a high voltage MOSFET with a maximum drain-source voltage of 600V. Features: Low gate charge Low on-state
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Stock:61
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Stock:8500
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Description: SPW35N60C3 is a N-channel MOSFET produced by Infineon Technologies. It is a high voltage MOSFET with a maximum drain-source voltage of 600V. Features: Low gate charge Low on-state
Stock:2000
Minimum:5
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Stock:20300
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TO-247
Infineon Technologies AG
Trans MOSFET N-CH 650V 34.6A 3-Pin(3+Tab) TO-247 Tube
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company