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TO-247
PFC
TO-247
Parameter Symbol Min Typ Max Unit Description Rated Voltage VRMS - 200 - V Maximum RMS voltage Rated Current IRMS - 60 - A Maximum RMS current Power Dissipation PD - - 1200 W Maximum power
Stock:10000
Minimum:30
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
STMicroelectronics
17+
Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Voltage VDS - 600 - V Gate-Source Voltage VGS -20 0 20 V Continuous Drain Current ID TC = 25°C - 10 - A Pulse Drain Curren
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
STMicroelectronics
Package Type: TO-220 Manufacturer: ST Description: The P75NF75 is a N-channel enhancement mode Field Effect Transistor (FET) from STMicroelectronics. It is designed for use in low voltage, high speed
Stock:10000
Minimum:10
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-3P
On Semiconductor
18+
Parameter NJW0302G NJW0281G Function DC-DC Converter DC-DC Converter Input Voltage Range (VIN) 4.5V to 28V 4.5V to 28V Output Voltage Range (VOUT) Adjustable, 1.2V to VIN - 1.5V Adjustable,
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
To-247
13+
Parameter Symbol Min Typical Max Unit Notes Supply Voltage VDD 2.7 - 5.5 V Operating Current IDD - 1.5 3.0 mA Output Current IOUT 0 100 200 mA Output Voltage VOUT 3.0 3.3 3.6 V Quie
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
Infineon Technologies AG
Parameter Symbol Test Conditions Min Typical Max Unit Collector-Emitter Voltage V CES I C = 0, T J = 25°C - 650 - V Gate-Emitter Voltage V GES I G = 0, T J = 25°C -20 0 20 V Continuous Coll
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-3P
Sanken Electric
2017+
Description: The 3152V is a NPN Silicon Power Transistor manufactured by Sanken. Features: * High DC current gain * Low collector-emitter saturation voltage * High collector-emitter breakdown voltage
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220
International Rectifier
15+
Description: N-Channel Power MOSFET Features: - Maximum Drain Source Voltage: 100V - Maximum Gate Source Voltage: ±20V - Maximum Continuous Drain Current: 33A - RDS(on) (Max) @Vgs: 10V: 0.045 Ohm - R
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F
05+
Parameter Description Part Number K2003 Type Digital Multimeter Display 4000 counts, LCD Input Impedance 10 MΩ (DC/AC Voltage) Voltage Measurement DC: 0.01 mV to 1000 V, AC: 0.01 mV to
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
SOP-14
On Semiconductor
15+
The HCU04A is an integrated circuit (IC) from ON Semiconductor. It is a 4-channel high-side switch designed for automotive applications. The HCU04A is a high-side switch with a low on-resistance of
Stock:10000
Minimum:4
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
Infineon Technologies AG
2018+
Description: N-Channel MOSFET Features: Low On-Resistance RDS(on) Avalanche Rated High dv/dt Capability Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Lead-Free Halogen-Free A
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-247
WX
2018+
MUR6030DCS is a 600V, 30A, ultrafast recovery diode with a TO-247 package. It is designed for high frequency switching applications such as power supplies, motor control, and other power switching cir
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-3PF
Renesas
09+
Parameter Symbol Min Typical Max Unit Description Supply Voltage VDD 2.7 - 5.5 V Operating supply voltage Quiescent Current IQ - 1.5 - μA Current consumption in standby mode Output Current
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F
Hitachi
02+
Description: 2SJ175 is a P-channel silicon MOSFET transistor manufactured by Hitachi. Features: Low on-resistance High speed switching High input impedance Low input capacitance Low ga
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F
Sanken Electric
2018+
Description: N-Channel MOSFET Features: - Low On-Resistance - High Speed Switching - Low Gate Charge - Low Input Capacitance - High Input Impedance - Low Output Capacitance - High Breakdown Voltage -
Stock:10000
Minimum:4
Standard delivery
Express: Estimated arrival {0}
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TO-247
Infineon Technologies AG
17+
Parameter Symbol Min Typ Max Unit Conditions On-State Resistance RDS(on) - 110 - mΩ VGS = 10V, ID = 20A Gate Charge QG - 34 - nC VGS = 10V, ID = 20A Input Capacitance Ciss - 2900 - pF VDS =
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-3
On Semiconductor
11+
Parameter Value Unit Collector-Emitter Voltage (VCEO) 80 V Emitter-Collector Voltage (VECO) 80 V Collector-Base Voltage (VCBO) 80 V Continuous Collector Current (IC) 15 A Pulse Collecto
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-3P
Sanken Electric
11+
Description: 2SB1559 is a silicon PNP epitaxial transistor manufactured by Sanken. Features: High DC current gain Low collector-emitter saturation voltage Low noise High transition frequency Hi
Stock:10000
Minimum:5
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
ZIP-11
STMicroelectronics
12+17+
Parameter Symbol Min Typical Max Unit Supply Voltage Vcc 4.5 - 18 V Quiescent Current Iq - 12 - mA Output Power (8Ω, THD 10%) Pout - 2 x 1.3 - W Total Harmonic Distortion (THD) THD - 0.5
Stock:10000
Minimum:1
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
TO-220F
NXP Semiconductors
15+
Description: NXP BYV10X-600P is a 600V, 10A, fast recovery rectifier diode in TO-220F package. Features: Low forward voltage drop High surge current capability High temperature soldering guar
Stock:10000
Minimum:2
Standard delivery
Express: Estimated arrival {0}
Standard delivery: Estimated arrival {0}
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