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国家代码SOT-23
14+
Parameter Symbol Min Typ Max Unit Notes Operating Voltage V_RH 2.5 - 36 V Cathode-to-Anode Voltage V_CA 2.0 - 36 V Output Current I_O 1.0 - 100 mA Reference Voltage V_REF 1.24 - 1.28 V
SMA
Parameter Symbol Min Typ Max Unit Forward Voltage Vf - 0.3 0.6 V Reverse Recovery Time trr - 45 - ns Peak Forward Current Ifsm - - 30 A Average Forward Current If(AV) - - 1 A Maximum Re
TO-220F
04+
Parameter Symbol Min Typical Max Unit Collector-Emitter Voltage VCE - - 80 V Collector-Base Voltage VCB - - 80 V Emitter-Base Voltage (Reverse) VEBO - - 5 V Collector Current (Continuous)
SOT23-5
14+
Parameter Symbol Min Typical Max Unit Input Voltage VIN 2.7 - 5.5 V Output Voltage VOUT 3.0 3.3 3.6 V Output Current (Max) IOUT - 1.5 2.0 A Quiescent Current IQ - 2.0 - μA Dropout Volta
TO-3PF
06+
Below is the parameter table and instructions for the C5411, which is a digital signal processor (DSP) from Texas Instruments. C5411 Parameter Table Parameter Symbol Min Typ Max Unit Supply Vol
LL-34
STMicroelectronics
Parameter Symbol Min Typ Max Unit Reverse Voltage VR - 20 - V Forward Current (Max) IFM - 1.0 - A Peak Forward Surge Current IFSM - 20.0 - A Forward Voltage (IF=10mA) VF - 1.2 - V Rever
TO-3P
Sanken Electric
10+
2SC4140 is a NPN silicon epitaxial transistor manufactured by Sanken Electric Co., Ltd. It is designed for use in audio frequency power amplifier applications. Description: The 2SC4140 is a NPN silic
SOT23-6
MPS
Parameter Symbol Test Conditions Min Typ Max Unit Input Voltage VIN - 2.5 - 5.5 V Output Voltage VOUT - 0.8 - 5.0 V Output Current IOUT - - 1.5 2.0 A Switching Frequency fSW - 1.0 1.2 1.5
SOT23-8
11+
Parameter Description Value Part Number Full part number of the device UP7501M8 Function Primary function of the device Power Management IC Input Voltage Range of input voltage that the dev
TO-220
International Rectifier
Parameter Symbol Min Typ Max Unit Drain-Source Voltage VDS - 100 - V Gate-Source Voltage VGS -20 - 0 V Continuous Drain Current (TC = 25°C) ID - 9 - A Continuous Drain Current (TC = 75°C)
SOT23-6
Silergy
Parameter Symbol Min Typ Max Unit Notes Input Voltage VIN 2.7 - 5.5 V Output Voltage VOUT - 1.2 - V Fixed Output Current IOUT - 200 300 mA Continuous Quiescent Current IQ - 30 50 μA Shut
TO-3P
Renesas
17+
Description: The 2SK1317 is a N-channel MOSFET transistor manufactured by Renesas. It is a high-speed switching device with low on-resistance and low gate-source capacitance. Features: Low on-resist
TO-220
International Rectifier
Parameter Symbol Min Typ Max Unit Drain-Source Voltage VDS -100 - - V Gate-Source Voltage VGS -20 - 0 V Continuous Drain Current ID - - -8 A Pulse Drain Current (tp = 10 μs, IG = 2 A) ID(
TO-220F
07+
Parameter Symbol Min Typ Max Unit Conditions Collector-Emitter Voltage VCEO - - 1000 V IC = 10 mA, TC = 25°C Emitter-Collector Voltage VECS - - 1000 V IC = 10 mA, TC = 25°C Base-Emitter Vol
TO-220F
NEC
04+
Parameter Symbol Min Typ Max Unit Notes Collector-Emitter Voltage VCE - - 600 V Emitter-Base Voltage VEB -6 - 6 V Collector Current IC - - 15 A Base Current IB - - 3 A Power Dissipa
KEC
To-247
18+
Parameter Symbol Min Typ Max Unit Notes Breakdown Voltage BVdss - - 1200 V Continuous Drain Current Id - 25 - A @ Tc = 25°C Pulse Drain Current Ipp - 100 - A @ Tc = 25°C, t = 10 μs, Duty C
SOT-223
1141
Description: The ITS4140N is a P-channel enhancement-mode MOSFET. Features: - Low On-Resistance - Low Gate Threshold Voltage - Fast Switching Speed - High Input Impedance - High Avalanche Energy App
SOT-89
14+
Parameter Value Unit Type Zener Diode - Zener Voltage (Vz) 4.7 V Maximum Zener Current (Izmax) 5.0 mA Power Dissipation (Pz) 200 mW Operating Temperature (Tamb) -65 to +150 °C Storage
TO-220
NEC
95+
Parameter Description Value Part Number D401A Type Diode Function General Purpose Rectifier Max Forward Current (IF) Continuous Forward Current 1A Peak Reverse Voltage (VRM) Maximum
TO-220
International Rectifier
Parameter Symbol Min Typical Max Unit Drain-Source Voltage VDS - - 100 V Gate-Source Voltage VGS -20 - 20 V Continuous Drain Current ID - 33 50 A Pulse Drain Current ID(p) - 100 - A Pow
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