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Description
HEXFET Power MOSFET
Title
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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● Logic-Level Gate Drive
● Ultra Low On-Resistance
● Surface Mount (IRLR2905)
● Straight Lead (IRLU2905)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications.Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Preview of the first 3 pages of the data sheet
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels to 1.5 watts are possible in typical surface mount applications.
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
When mounted on 1" square PCB or G-10 Material For recommended footprint and soldering techniques refer to application note #AN-994
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Input Capacitance Output Capacitance Reverse Transfer CapacitanceCaculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact.Some Part number from the same manufacture
Same catergory
10000 buyer reviews from United States
Emma Watson
Length of registration:7 years
The IRLR2905PBF integrated circuit from Utsource is an excellent choice for a variety of applications. It is a high-performance, low-side MOSFET driver with a wide operating voltage range and low on-resistance. It is ideal for use in motor control, power supply, and other applications requiring high-speed switching. The IRLR2905PBF is a reliable and cost-effective solution for any project.
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0
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03/17/2023
Dee Rose
Length of registration:15 years
Very handy for the hobbyist, and a very convenient size and quantity. I've used this product several times, and been glad I did.
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0
Reply0
11/10/2022
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IRLR2905PBF
IRLR2905PBF has several brands around the world that may have alternate names for IRLR2905PBF due to regional differences or acquisition. IRLR2905PBF may also be known as the following names:
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