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Home > Elec-component > Modules > IGBT
Description: IGBT Module Feature: - High speed switching - Low on-state voltage drop - Low switching losses - High surge current capability - High short-circuit withstand time - Low noise Ap
Stock:2000
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Description: The SKM400GB124D is a three-phase, insulated-gate bipolar transistor (IGBT) module from Semikron. It is designed for use in motor drives, welding machines, and uninterruptible power suppl
Stock:2000
Minimum:1
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Description: This is a module from Mitsubishi Electric that is used to control the operation of a motor. It is a 50A rated module with a 6-pole structure. Features: Rated current of 50A 6
Stock:2000
Minimum:1
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Description: The BSM300GA120DN2SE3256 is a three-phase, insulated-gate bipolar transistor (IGBT) module from Semikron. It is designed for use in motor drives, welding machines, and other industrial ap
Stock:2000
Minimum:1
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MODULE
Eupec
n/a
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High frequency o
Stock:2000
Minimum:1
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MODULE
Eupec
IGBT Modules up to 1200V PIM; Package: AG-EASY2-1; IC max: 10.0 A; VCEsat typ: 1.9 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EasyPIM? 2;
Description: The FP10R12YT3 is an insulated-gate bipolar transistor (IGBT) module manufactured by Eupec. It is a three-phase inverter module with a nominal current rating of 10A and a maximum voltage
Stock:2000
Minimum:1
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Description: The MG50Q2YS50 is a 50A, 600V, three-phase bridge rectifier module from Toshiba. Features: Low forward voltage drop High surge forward current capability High reliability High temp
Stock:2000
Minimum:1
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Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
00+
TRANSISTOR 150 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG150N2YS40 is a high-power insulated gate bipolar transistor (IGBT) module from Toshiba America Electronic Components. It is designed for use in motor control, welding, and other
Stock:2000
Minimum:1
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MODULE
Mitsubis
CI Module Three Phase Converter Three Phase Inverter 25 Amperes/1200 Volts
The CM25MD1-24H is a module manufactured by Mitsubishi. It is a power supply module that is used to convert AC power to DC power. It has a rated output voltage of 24V and a rated output current of 1A.
Stock:2000
Minimum:1
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Description: The FSAM10SH60A is a 600V, 10A, single Insulated N-Channel IGBT Module. Features: High Voltage Rating of 600V High Speed Switching of 10A High Deflection Voltage High Short Circuit W
Stock:5000
Minimum:1
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MODULE
Eupec
00+
IGBT Modules up to 1200V Dual ; Package: AG-62MM-1; IC max: 300.0 A; VCEsat typ: 1.7 V; Configuration: Dual Modules; Technology: IGBT3; Housing: 62 mm;
Description: The FF300R12KE3 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. It is a three-phase inverter module with a voltage rating of 1200V and a current rating of 300A. Feature
Stock:2000
Minimum:1
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Description: This is an EUPEC module with a rated current of 15A and a voltage rating of 1200V. It is designed for use in power electronic applications such as motor drives, power supplies, and invert
Stock:2000
Minimum:1
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MODULE
Eupec
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV VBRCES | 1.8KA IC
Stock:2000
Minimum:1
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SKM151A4R is a module manufactured by Semikron. It is a three-phase bridge rectifier module with four diodes. It has a maximum current rating of 150A and a maximum voltage rating of 1200V. The module
Stock:2000
Minimum:1
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MODULE
Toshiba America Electronic Components
N/A
TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG75Q2YS1 is a 75A, 600V, N-channel IGBT module from Toshiba America Electronic Components. Features: Low on-state resistance Low switching noise High speed switching High
Stock:2000
Minimum:1
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The CM200DY-12E is a module manufactured by Mitsubishi. It is a 1200V, 200A IGBT Module with a built-in diode. This module is designed for use in motor control applications such as AC servo motors, AC
Stock:2000
Minimum:1
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BSM25GD120DN12 is an insulated gate bipolar transistor (IGBT) module manufactured by Eupec. It has a maximum collector current of 25A and a maximum collector-emitter voltage of 1200V. It is suitable f
Stock:2000
Minimum:1
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The CM4308A2 is a module from CEL that is a dual-channel, high-performance, low-power, digital ambient light and proximity sensor. It is designed to detect ambient light intensity and proximity of obj
Stock:2000
Minimum:1
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Description: The MG25Q6ES43 is a 25A, 600V, three-phase insulated gate bipolar transistor (IGBT) module. Features: Low saturation voltage Low switching loss High speed switching High reliab
Stock:2000
Minimum:1
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company