MRF9030L MRF9030
TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeSearch results filter:
Home > Elec-component > Modules > RF Modules
TO-272
Freescale
06+
RF Power Field Effect TransistorN - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 30 W, 26 V ni-360
Favorite
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA55H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
ni-780s
Freescale
09+
MRF7S21210HS 2110 - 2170 MHz, 63 W AVG., 28 V [RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Favorite
H2S
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
H46S
Mitsubishi
2013
Silicon RF Devices RF High Power MOS FET Modules RA07M1317M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H3340M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA60H3847M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H2127M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
H2S
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA13H4047M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
Favorite
H46S
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA07H4047M Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RA07H4047M is a power transistor manufactured by Mitsubishi. It is a NPN type transistor with a maximum collector current of 7A and a maximum collector-emitter voltage of 400V. It is used in power amp
Favorite
H2M
Mitsubishi
2017+
Silicon RF Devices RF High Power MOS FET Modules RA30H4452M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company