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Description: GreenPAK Programmable Mixed-Signal Matrix with In-System Programmability Features: Low Power Consumption In-System Programmability Low Voltage Operation High Integration Low Cost Fl
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Description: RTD2662-GR is a QFP128 integrated circuit (IC) manufactured by Realtek. It is a single-chip, low-power, high-definition (HD) digital TV (DTV) SoC (system-on-chip) solution. Features: S
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Description: NIKO P5504EDG is a SOT-252 package NPN transistor. Features: * High current gain * Low saturation voltage * Low noise Applications: * Audio amplifiers * Switching applications * Motor c
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H2M
Mitsubishi
2018+
Silicon RF Devices RF High Power MOS FET Modules RA30H4047M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RA30H4047M1 is a RF power transistor module manufactured by Mitsubishi. It is designed for use in applications such as cellular base stations, repeaters, and other RF power amplifiers. The RA30H4047M
Stock:2000
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Description: 2SK1507 is a N-channel MOSFET manufactured by Fuji Electric. Features: - Low on-resistance - High speed switching - Low gate charge - Low input capacitance - High voltage Applications:
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Description: TK5P50D5 is a N-channel enhancement mode MOSFET transistor manufactured by Toshiba. Features: - Low on-state resistance - Low gate charge - Low input capacitance - High speed switching
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company