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FP25R12KT3

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$57.82060

C$54.35136

From: C$57.82060

Description: Infineon IGBT Module Features: Low switching losses Low conduction losses High frequency operation High current capability High surge current capability Low thermal resistance H

Stock:196

Minimum:1

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FF100R12RT4

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$59.70313

C$56.12094

From: C$59.70313

Description: Infineon IGBT Module Features: Low switching losses Low conduction losses High short-circuit capability High frequency operation Low inductance Low stray inductance Low EMI High s

Stock:200

Minimum:1

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FF50R12RT4

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$53.78660

C$50.55940

From: C$53.78660

Description: Infineon IGBT Module Features: Low losses High switching frequency Low inductance Low EMI High current capability High voltage capability High short circuit capability Lo

Stock:200

Minimum:1

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FP10R12W1T4

MODULE

Infineon Technologies AG

2020+

NEW KRING ELECTRONICS CO., LTD.

C$32.27196

C$30.33564

From: C$32.27196

Stock:198

Minimum:1

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FF150R12RT4

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$68.84685

C$64.71604

From: C$68.84685

Description: Infineon FF150R12RT4 is a three-phase inverter bridge module. It is designed for use in medium-voltage motor drives, uninterruptible power supplies, and other industrial applications. Fe

Stock:200

Minimum:1

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FP50R12KT4

MODULE

Infineon Technologies AG

23+

NEW KRING ELECTRONICS CO., LTD.

C$75.30124

C$70.78317

From: C$75.30124

Stock:186

Minimum:1

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FP75R12KT3

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$94.12655

C$88.47896

From: C$94.12655

Description: Infineon IGBT Module Features: Low switching losses High current capability High voltage capability Low inductance Low thermal resistance High frequency operation Low

Stock:199

Minimum:1

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FP50R12KT3

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$88.74789

C$83.42302

From: C$88.74789

Stock:200

Minimum:1

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FF75R12RT4

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$56.74486

C$53.34017

From: C$56.74486

Description: Infineon IGBT Module Features: - 1200 V, 75 A - NPT IGBT4 Technology - Low VCE(sat) - Low Conduction and Switching Losses - Low Gate Charge - Short Circuit Capability - High Frequ

Stock:200

Minimum:1

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IDW20G65C5

TO-247

Infineon Technologies AG

19+

Wan Heng Li Electronics Co.,Ltd.

C$21.51464

C$20.22376

From: C$21.51464

Stock:2855

Minimum:5

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FF200R12KT4

MODULE

Infineon Technologies AG

2020+

NEW KRING ELECTRONICS CO., LTD.

C$80.67990

C$75.83911

From: C$80.67990

Stock:200

Minimum:1

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FP40R12KT3

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$64.54392

C$60.67128

From: C$64.54392

Stock:190

Minimum:1

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FF300R12KT4

MODULE

Infineon Technologies AG

2020+

NEW KRING ELECTRONICS CO., LTD.

C$102.19454

C$96.06287

From: C$102.19454

Description: This is a three-phase inverter module from Infineon. It is designed to be used in motor drives, renewable energy systems, and other industrial applications. Features: Maximum current r

Stock:200

Minimum:1

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HGTG11N120CND

TO-264

On Semiconductor

22+

Wan Heng Li Electronics Co.,Ltd.

C$15.36760

C$14.44554

From: C$15.36760

Stock:5500

Minimum:5

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FF150R12KT3G

MODULE

Infineon Technologies AG

2018+

NEW KRING ELECTRONICS CO., LTD.

C$84.71390

C$79.63106

From: C$84.71390

Description: Infineon IGBT Module Features: 1200V blocking voltage 150A continuous current Low switching losses Low EMI High short circuit capability Low gate charge Low thermal resistance Hig

Stock:194

Minimum:1

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FS25R12W1T4

MODULE

Infineon Technologies AG

2015+

NEW KRING ELECTRONICS CO., LTD.

C$37.38169

C$35.13879

From: C$37.38169

FS25R12W1T4 is a module from Infineon Technologies. It is a three-phase inverter bridge module with a rated current of 25A and a maximum voltage of 1200V. It is designed to be used in a wide range of

Stock:199

Minimum:1

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Used and refurbished parts guaranteed can work well

BSM50GD120DN2_B10

MODULE

Eupec

04+

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

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≥1:

C$103.73130

C$97.50742

≥2:

C$103.73130

C$97.50742

≥5:

C$96.81588

C$91.00693

≥10:

C$96.81588

C$91.00693

≥20:

C$96.81588

C$91.00693

≥30:

C$96.81588

C$91.00693

≥50:

C$96.81588

C$91.00693

≥100:

C$96.12434

C$90.35688

≥500:

C$95.43280

C$89.70683

From: C$95.43280

Description: BSM50GD120DN2_B10 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: - 1200 Volts - 50 Amps - 4.1 mOhms - Low Vce(sat) - Improved EMI performance

Stock:2000

Minimum:1

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FP75R12KT4

MODULE

Infineon Technologies AG

2020+

NEW KRING ELECTRONICS CO., LTD.

C$102.19454

C$96.06287

From: C$102.19454

Description: Infineon IGBT Module Features: 75A, 1200V Low inductance Low switching losses High speed switching Low EMI Low gate charge Low collector-emitter saturation voltage Low on-state re

Stock:182

Minimum:1

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