≥1:
¥2180.00000
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ アドレスの追加
新運送先
*追跡情報を時間内に受信できるように、携帯電話番号を正しく入力してください。
国コードDescription: The MG10G6EL2 is a 10GBASE-ER/EW SFP+ transceiver module from Mellanox. It is designed for use with 10 Gigabit Ethernet links up to 40km in length. Features: Supports 10 Gigabit Ethern
在庫:2000
最小数量:1
お気に入り
MG150J2YS1 is a module manufactured by Mitsubishi Electric. It is a 150A IGBT module with a voltage rating of 1200V. It is designed for use in motor control, renewable energy, welding, and other indus
在庫:2000
最小数量:1
お気に入り
在庫:2000
最小数量:1
お気に入り
Description: BSM15GD120DN12 is an IGBT module manufactured by Infineon Technologies. It is a 1200V, 15A, dual N-channel IGBT module. Features: 1200V blocking voltage 15A continuous current
在庫:2000
最小数量:1
お気に入り
Description: The FRS200BA60 is a silicon controlled rectifier (SCR) module manufactured by Sanrex. It is designed for use in high power switching applications. Features: High surge current capabi
在庫:2000
最小数量:1
お気に入り
6MBI15S-120 is a module manufactured by Fuji Electric. It is a 600V, 15A, IGBT module. It is designed to be used in motor control, UPS, welding, and other industrial applications. It features low powe
在庫:2000
最小数量:1
お気に入り
Description: SANREX Module Features: High voltage and high current capability Low inductance Low noise High frequency operation High reliability Low EMI High surge capability Low on-state resi
在庫:2000
最小数量:1
お気に入り
Description: This is a 200A, 1600V, 3-phase diode module from NIEC. Features: High surge current capability Low forward voltage drop Low reverse current leakage High temperature operation High re
在庫:2000
最小数量:1
お気に入り
在庫:2000
最小数量:1
お気に入り
Description: NIEC Module Features: Compact size High reliability Low power consumption High speed switching Low noise Easy to install Long life High temperature resistance Appl
在庫:5000
最小数量:1
お気に入り
2MBI200L-060 is a module manufactured by Fuji Electric. It is a 200A, 600V insulated type IGBT module. It is designed for use in power conversion applications such as motor control, UPS, welding, and
在庫:2000
最小数量:1
お気に入り
MODULE
Fuji Electric
PIM/Built-in converter with thyristor and brake 600V / 75A / PIM
Description: The 7MBR75SD060 is a module manufactured by Fuji Electric. It is a three-phase bridge rectifier module with a maximum current rating of 75A. Features: High surge current capability L
在庫:2000
最小数量:1
お気に入り
在庫:2000
最小数量:1
お気に入り
在庫:2000
最小数量:1
お気に入り
Description: The CVM100BB160 is a 1600V, 100A, three-phase bridge rectifier module from SanRex. It is designed for use in AC to DC power conversion applications. Features: 1600V, 100A, three-phase
在庫:2000
最小数量:1
お気に入り
MODULE
Semikron
THYRISTOR/DIODE MODULE, 106A 1200VTHYRISTOR/DIODE MODULE, 106A 1200V; Voltage, Vrrm:1200V; Current, It av:106A; Case style:SEMIPACK 1; Current, It rms:180A; Current, Itsm:2250A; Voltage, Vgt:3.0V; Current, Igt:150mA; Centres,
SKKH106/08D is a three-phase bridge rectifier module manufactured by Semikron. It has a maximum current rating of 106A and a maximum voltage rating of 800V. It is designed for use in AC/DC converters,
在庫:2000
最小数量:1
お気に入り
BSM300GB60DLC is a module manufactured by EUPEC. It is an insulated gate bipolar transistor (IGBT) module with a voltage rating of 600V and a current rating of 300A. The module features a high power
在庫:2000
最小数量:1
お気に入り
The BSM30GD60DLC is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. It is a 600V, 30A device with a maximum junction temperature of 150°C. It has a low on-state voltage drop
在庫:2000
最小数量:1
お気に入り
MODULE
Eupec
Diode Bridges with BC; Package: AG-ECONO2-1; VDRM/ VRRM V: 1,600.0 V; IFSM max: 550.0 A; Configuration: 3 phase bridge rectifier uncontrolled with brake chopper ; Housing: EconoBRIDGE? ;
DDB6U84N16RR is an IGBT eupec power module made by Infineon Technologies. It is a double-sided cooled, 16-pack IGBT module with a 1200V blocking voltage and an 800A/1200A current carrying capability.
在庫:2000
最小数量:1
お気に入り
Description: The MG50Q6ES1 is a high-performance, high-efficiency, insulated-gate bipolar transistor (IGBT) module with a built-in anti-parallel diode. Features: High voltage: 600V Low on-state res
在庫:2000
最小数量:1
お気に入り
生産の専門家を停止し、生産を停止し、見つけるのが難しい多数の電子部品を提供し、メンテナンス会社を促進することができます