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产品描述
Device = Diode
Maxisimam Operating Junction Temperature( C ) = 150
Storage Temperature( C ) = -40 to +125
Circuit = Cascaded
Data Sheet(pdf) = _pd20116.pdf
Outline(dxf) = Pd15116.dxf
Remarks =
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=
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本网站上使用的所有产品名称,商标,品牌和徽标均为其各自所有者的财产。 具有这些名称,商标,品牌和徽标的产品的描述或销售仅用于标识目的,并不表示与任何权利所有者有任何隶属关系或授权。
来自同一制造商的某些零件号
Some Part number from the same manufacture Nihon Inter Electronics (NIEC) |
PD2018 Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pd2018.pdf ;; Outline(dxf) = Pd15116.dxf ;; Remarks |
PD25012 Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pc25012.pdf ;; Outline(dxf) = Pc25016.dxf |
PD2503 Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pc2503.pdf ;; Outline(dxf) = Pc25016.dxf |
PD300F12 Device = FRD ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pd300f12.pdf ;; Outline(dxf) = Pd300f12.dxf ;; Remarks |
PD3012 Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pc3012.pdf ;; Outline(dxf) = Pc10016.dxf |
PD308 Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pc308.pdf ;; Outline(dxf) = Pc1008.dxf |
PD4008 |
PD4M440H Device = MOS ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pd4m441h.pdf ;; Outline(dxf) = Pd10m440h.dxf ;; Remarks |
PD4M440L |
PD4M441H |
PD4M441L |
PD50F2 Device = FRD ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pd50f2.pdf ;; Outline(dxf) = Pd50f6.dxf ;; Remarks |
PD50F4 |
PD50F5 |
PD50F6 |
PD6012 Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pc6012.pdf ;; Outline(dxf) = Pc10016.dxf |
PD608 Device = Diode ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pc608.pdf ;; Outline(dxf) = Pc1008.dxf |
PD7M440H Device = MOS ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cascaded ;; Data Sheet(pdf) = _pd7m441h.pdf ;; Outline(dxf) = Pd10m440h.dxf ;; Remarks |
PD7M440L |
PD7M441H |
PD7M441L |
61MA100 : Device = Diode ;; Ripetitive Peak Reverse Voltage(V) = 1000 ;; Average Rectified Current(A) = 60 ;; Condition(cace or Ambient Temperature) = ;; Surge Forward Current(A) = 1000 ;; Maximam Operating Junction Temperature( C ) = 175 ;; Storage Temperature( C ) = -40 to 175 ;; Peak Reverse Current 21E30AD : Crystal Filter that Supports Surface Mounting. B25EW : Process Sealed Subminiature Antistatic Toggles AB11CB-FB : Process Sealed Subminiature Pushbuttons UB216SKW01N-5F : Low Profile Pushbuttons UB26RKW03N-B : Distinctive Characteristics MB2185LS1G : Miniature Pushbuttons A12K1V1 : Process Sealed Subminiature Rockers WR19BSN : Environmentally Sealed Rockers E2018PG-BE : Light Duty Miniature Toggles M2T15TXG13-D : Process Sealed Miniature Rockers EC10QS06TE12R : 0.72 A, 60 V, SILICON, SIGNAL DIODE Specifications: Number of Diodes: 1 ; IF: 720 mA |
同品类
Same catergory |
2N3800DCSM : Screening Options Available = ;; Polarity = PNP ;; Package = LCC2 (MO-041BB) ;; Vceo = 60V ;; IC(cont) = 0.05A ;; HFE(min) = 150 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 100MHz ;; PD = 0.25W. 2SC3686 : NPN Triple Diffused Planar Silicon Transistor, Very High-definition CTR Display Horizontal Deflection Output. FS1UM-16A : N-channel Power MOSFET High-speed Switching Use: 800v, 1a. APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th). FS70UM-2 : Type = Trench Gate ;; Voltage = 100V ;; Rdson = 20 ;; Package = Obsolete ;; Drive Voltage = N/a. IRF1205 : HexFET(r) Power MOSFET 55v 41a: 55v, 41a. Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temprature Fast Switching Fully Avalanche Rated Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that. PBYR645CTD : PBYR645CTD Series; Rectifier Diodes Schottky Barrier. Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CTD series is supplied in the SOT428 surface mounting package. Limiting values in accordance. SB40W03T : . Schottky Barrier Diode (Twin Type Cathode Common) Applications High frequency rectification (switching regulators, converters, choppers). Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=30ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. s Parameter Repetitive Peak Reverse. SiC714CD10 : Fast Switching MOSFETs With Integrated Driver The SiC714CD10 is an integrated solution which contains two PWM-optimized MOSFETs (high side and low side MOSFETs) and a driver IC. Integrating the driver allows better optimization of Power MOSFETs. This minimizes the losses and provides better performance at higher frequency.. AP1600 : RESISTOR, WIRE WOUND, 16.5 W, 1; 2; 5 %, 200 ppm, 1 ohm - 56000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, ROHS COMPLIANT ; Operating DC Voltage: 600 volts ; Operating Temperature: -55 to 375 C (-67 to 707 F). M10T47SSAXT : 1 ELEMENT, 0.05 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Air ; Lead Style: Axial, PRINTED WIRING PIN ; Application: General Purpose, RF Choke ; Inductance Range: 0.0500 microH ; Rated DC Current: 100 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F). T1620-800W : 800 V, 16 A, SNUBBERLESS TRIAC, TO-220AB. s: Thyristor Type: Triac ; Package Type: PLASTIC, ISOWATT220AB, 3 PIN ; Pin Count: 3 ; VDRM: 800 volts ; IT(RMS): 16 amps ; Standards and Certifications: RoHS. TNC-R : CAPACITOR, CERAMIC, MULTILAYER, 50; 63; 100; 200 V, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F). 12063D105JAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, X5R, 1 uF, SURFACE MOUNT, 1206. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology ; Operating. 2N5154N1B : 2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA. s: Polarity: NPN ; Package Type: HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN. |
有1088个来至China的买家评价
Jennifer Davis
Length of registration:7 years
I recently purchased the PD20116 electronic component from Utsource and was pleased with the quality and performance of the product. The product was delivered on time and was well packaged. I would highly recommend Utsource to anyone looking for quality electronic components.
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03/17/2023
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All UTSOURCE purchases have a 60 days money back return policy, plus a 90 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
PD20116
PD20116 has several brands around the world that may have alternate names for PD20116 due to regional differences or acquisition. PD20116 may also be known as the following names:
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