≥1:
US $2.09550
Buy(0)
Inquiry(0)
Dear customers, due to the implementation of the GDPR policy in Europe, UTSOURCE has also made adjustment accordingly to meet the policy requirements. Please read the new privacy policy carefully and this window will no longer pop up after you accept it.
Delivery Address
+ Add Address
The new shipping address
* Please fill in the cell phone number correctly to make sure that you can receive the tracking info in time.
Country CodeSearch results filter:
Stock:10000
Minimum:5
Favorite
Stock:10000
Minimum:10
Favorite
SOT-363/SC-88
Panasonic
8R/NOPB
XP4501 NPN+NPN Complex Bipolar Transistor 60V 100mA HEF=160~460 SOT-363/SC-88 marking 5H switch and digital circuit application
Description: NPN Transistor Features: High Voltage: VCEO= -50V Low Saturation Voltage: VCE(sat)= -0.2V (Max) @ IC=-10mA High Current Gain: hFE= 100 (Min) @ IC=-10mA Small Package: SC-88 Applica
Stock:10000
Minimum:13
Favorite
Description: This is a DIP (Dual In-line Package) integrated circuit manufactured by NEC. Features: 8-bit microcontroller 4K bytes of ROM 256 bytes of RAM 8-bit timer 8-bit A/D converter 8-bit P
Stock:10000
Minimum:2
Favorite
Stock:2000
Minimum:1
Favorite
Stock:5000
Minimum:1
Favorite
Description: FA5304AS is a SOP8 package IC manufactured by Fujitsu. It is a low-noise, high-gain, low-distortion, low-power amplifier. Features: Low-noise: 0.5dB High-gain: 40dB Low-distorti
Stock:10000
Minimum:2
Favorite
Description: P9006EDG is a NPN power transistor manufactured by NIKO-SEM. Features: High DC current gain Low saturation voltage Low collector-emitter saturation voltage Low noise High
Stock:10000
Minimum:2
Favorite
Stock:10000
Minimum:2
Favorite
Stock:11460
Minimum:10
Favorite
The 2SC5866TLQ is a NPN epitaxial planar silicon transistor manufactured by ROHM Semiconductor. It is designed for use in high-speed switching applications. Features: High speed switching Low
Stock:65
Minimum:5
Favorite
Stock:599
Minimum:5
Favorite
Stock:5000
Minimum:1
Favorite
The TLE4208G is a high-side power switch with integrated vertical power MOSFET and an integrated voltage regulator. Features: Integrated vertical power MOSFET Overload protection Over-temper
Stock:10000
Minimum:1
Favorite
Stock:10000
Minimum:10
Favorite
Stock:1950
Minimum:5
Favorite
Stock:10000
Minimum:1
Favorite
Stock:5000
Minimum:1
Favorite
Description: Dual N-Channel Enhancement Mode Field Effect Transistor Features: - Low On-Resistance - Low Gate Threshold Voltage - Fast Switching Speed - High Input Impedance - High Power Dissipation -
Stock:10000
Minimum:3
Favorite
Description: The 2SC3303 is a NPN silicon epitaxial transistor designed for use in low frequency power amplification and switching applications. Features: Low collector-emitter saturation voltage
Stock:720
Minimum:5
Favorite
Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company