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BSM25GD120DN2E3224
BSM25GD120DN2E3224 has several brands around the world that may have alternate names for BSM25GD120DN2E3224 due to regional differences or acquisition. BSM25GD120DN2E3224 may also be known as the following names:
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Description
BSM25GD120DN2E3224
Stock:9999 |
Eupec |
IGBT Power Module |
≥1: US $60.76950 US $57.12333 ≥2: US $60.76950 US $57.12333 ≥5: US $58.74385 US $55.21922 ≥10: US $57.93359 US $54.45757 ≥20: US $57.52846 US $54.07675 ≥30: US $56.71820 US $53.31511 ≥50: US $56.71820 US $53.31511 ≥100: US $56.31307 US $52.93429 ≥500: US $55.90794 US $52.55346
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Inquiry
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BSM25GD120DN2E3224
Stock:33937 |
Eupec 05+ |
IGBT Power Module |
≥1: US $51.66000 US $48.56040 ≥2: US $51.66000 US $48.56040 ≥5: US $49.93800 US $46.94172 ≥10: US $49.24920 US $46.29425 ≥20: US $48.90480 US $45.97051 ≥30: US $48.21600 US $45.32304 ≥50: US $48.21600 US $45.32304 ≥100: US $47.87160 US $44.99930 ≥500: US $47.52720 US $44.67557
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BSM25GD120DN2E3224
Stock:3293 |
Infineon Technologies AG 17+ |
IGBT Power Module |
≥1: US $79.62900 US $74.85126
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Inquiry
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BSM25GD120DN2E3224
Stock:120 |
Infineon Technologies AG 2018+ |
IGBT Power Module |
≥1: US $86.05520 US $80.89189
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Inquiry
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BSM25GD120DN2E3224
Stock:19735 |
Eupec 14+ |
IGBT Modules up to 1200V SixPACK |
≥1: US $46.93920 US $44.12285
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Inquiry
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Introduce this module:
The BSM25GD120DN2E3224 is power module IGBT that can easily be used in the applications which needs the requirements of power electronics. With free wheel diode structure you do not have to worry about the over voltage or short circuit problems. Thanks to free-wheel diode structure this module will give you protection from these types of problems
Some Core parameters of the module.
● Collector-emitter voltage : VCE 1200V
● Collector-gate voltage: (RGE = 20kΩ): 1200
● Gate-emitter voltage VGE : ± 20V
● DC collector current (Ic) TC = 25℃ : 35A
● DC collector current (Ic) TC = 80℃ : 25A
● Pulsed collector current, (tp = 1 ms TC = 25℃) : 70A
● Pulsed collector current, (tp = 1 ms TC = 80℃) : 50A
● Power dissipation per IGBT (TC = 25℃) = 200 Watt
● Thermal resistance, chip case : ≤ 0.6KW
● Diode thermal resistance, chip case : RthJCD ≤ 1kW
● Gate Threshold Voltage (VGE = VCE, IC = 1mA) : 4.5V to 6.5V
● Collector-emitter saturation voltage
○ VGE = 15V, IC = 25A, Tj = 25℃ : 2.5V to 3V
○ VGE = 15V, IC = 25A, Tj = 125℃ : 3.1 to 3.7V
● Zero gate voltage collector current
○ VCE = 1200 V, VGE = 0 V, Tj = 25℃ : 0.5mA to 0.8mA
○ VCE = 1200 V, VGE = 0 V, Tj = 125℃ : 2.0mA
● Gate-emitter leakage current (VGE = 20V, VCE = 0V) : 180nA
● Transconductance (VCE = 20V, IC = 25A) : 10S
● Input capacitance (VCE = 25V, VGE = 0V, f = 1MHz) : 1650pF
● Output capacitance (VCE = 25V, VGE = 0V, f = 1MHz) : 250pF
● Reverse Transfer capacitance (VCE = 25V, VGE = 0V, f = 1 MHz) : 110pF
● Turn ON delay time (VCC = 600V, VGE = 15V, IC = 25A RGon = 47Ω) : 75nS to 150nS
● Rise time (VCC = 600V, VGE = 15V, IC = 25A RGon = 47Ω) : 65nS to 130nS
● Turn-off delay time (VCC = 600V, VGE = -15V, IC = 25A RGon = 47Ω) : 400nS to 600nS
● Fall time (VCC = 600V, VGE = -15V, IC = 25A RGon = 47Ω) : 50nS to 100nS
How it use:,
Three phase motor controller using IGBT
DC Motor driver using Chopper Circuit using IGBT
E-catalog
Freight calculation
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 200$,Overweight will be charged separately
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