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BSM25GD120DN2E3224

Category: IGBT

Description: IGBT Power Module

Price range ($)

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46.93920 86.05520

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Part Number Seller's Name Stock Brand Package/Case Date Code Description Price

BSM25GD120DN2E3224

BSM25GD120DN2E3224 has several brands around the world that may have alternate names for BSM25GD120DN2E3224 due to regional differences or acquisition. BSM25GD120DN2E3224 may also be known as the following names:

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    4

    Brand new

    4

    Certified preowned

    4

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    4

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    4

    Description

    Part Number Product Description Summary Price Buy

    Utsource

    66794

    5.0 out of 5 stars

    1 star 0.1%
    2 star 0%
    3 star 0.2%
    4 star 0.3%
    5 star 99.3%

    Total products: 2398060

    Total sales: 12728598

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    BSM25GD120DN2E3224 IGBT Power Module
    BSM25GD120DN2E3224

    Stock:9999

    USED

    Eupec

    IGBT Power Module

    ≥1: US $60.76950 US $57.12333

    ≥2: US $60.76950 US $57.12333

    ≥5: US $58.74385 US $55.21922

    ≥10: US $57.93359 US $54.45757

    ≥20: US $57.52846 US $54.07675

    ≥30: US $56.71820 US $53.31511

    ≥50: US $56.71820 US $53.31511

    ≥100: US $56.31307 US $52.93429

    ≥500: US $55.90794 US $52.55346

    More: Inquiry

    BSM25GD120DN2E3224 IGBT Power Module
    BSM25GD120DN2E3224

    Stock:33937

    USED

    Eupec

    05+

    IGBT Power Module

    ≥1: US $51.66000 US $48.56040

    ≥2: US $51.66000 US $48.56040

    ≥5: US $49.93800 US $46.94172

    ≥10: US $49.24920 US $46.29425

    ≥20: US $48.90480 US $45.97051

    ≥30: US $48.21600 US $45.32304

    ≥50: US $48.21600 US $45.32304

    ≥100: US $47.87160 US $44.99930

    ≥500: US $47.52720 US $44.67557

    More: Inquiry

    NAN FENG Electronics Co.,Ltd.

    79

    4.9 out of 5 stars

    1 star 1.3%
    4 star 2.5%
    5 star 96.2%

    Total products: 1634

    Total sales: 3587

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    BSM25GD120DN2E3224 IGBT Power Module
    BSM25GD120DN2E3224

    Stock:3293

    NEW

    Infineon Technologies AG

    17+

    IGBT Power Module

    ≥1: US $79.62900 US $74.85126

    More: Inquiry

    NEW KRING ELECTRONICS CO., LTD.

    4

    4.0 out of 5 stars

    1 star 25%
    5 star 75%

    Total products: 1285

    Total sales: 2688

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    BSM25GD120DN2E3224 IGBT Power Module
    BSM25GD120DN2E3224

    Stock:120

    NEW

    Infineon Technologies AG

    2018+

    IGBT Power Module

    ≥1: US $86.05520 US $80.89189

    More: Inquiry

    De Fa Electronics Co.,Ltd.

    918

    5.0 out of 5 stars

    1 star 0.1%
    3 star 0.1%
    4 star 0.5%
    5 star 99.2%

    Total products: 4342

    Total sales: 6761

    Average lead time: 0 Hour

    Delivery times (Express): 0Deliverytimes

    Delivery times (Post office): 0

    BSM25GD120DN2E3224 IGBT Modules up to 1200V SixPACK
    BSM25GD120DN2E3224

    Stock:19735

    USED

    Eupec

    14+

    IGBT Modules up to 1200V SixPACK

    ≥1: US $46.93920 US $44.12285

    More: Inquiry

    Introduce this module:

    The BSM25GD120DN2E3224 is power module IGBT that can easily be used in the applications which needs the requirements of power electronics. With free wheel diode structure you do not have to worry about the over voltage or short circuit problems. Thanks to free-wheel diode structure this module will give you protection from these types of problems

     

    Some Core parameters of the module.

       Collector-emitter voltage : VCE 1200V

       Collector-gate voltage: (RGE = 20kΩ): 1200

       Gate-emitter voltage VGE : ± 20V

       DC collector current (Ic) TC = 25 : 35A

       DC collector current (Ic) TC = 80 : 25A

       Pulsed collector current, (tp = 1 ms TC = 25) : 70A

       Pulsed collector current, (tp = 1 ms TC = 80) : 50A

       Power dissipation per IGBT (TC = 25) = 200 Watt

       Thermal resistance, chip case : ≤ 0.6KW

       Diode thermal resistance, chip case : RthJCD ≤ 1kW

       Gate Threshold Voltage (VGE = VCE, IC = 1mA) : 4.5V to 6.5V

       Collector-emitter saturation voltage

      VGE = 15V, IC = 25A, Tj = 25 : 2.5V to 3V

      VGE = 15V, IC = 25A, Tj = 125 : 3.1 to 3.7V

       Zero gate voltage collector current

      VCE = 1200 V, VGE = 0 V, Tj = 25 : 0.5mA to 0.8mA

      VCE = 1200 V, VGE = 0 V, Tj = 125 : 2.0mA

       Gate-emitter leakage current (VGE = 20V, VCE = 0V) :  180nA

       Transconductance (VCE = 20V, IC = 25A) : 10S

       Input capacitance (VCE = 25V, VGE = 0V, f = 1MHz) : 1650pF

       Output capacitance (VCE = 25V, VGE = 0V, f = 1MHz) : 250pF

       Reverse Transfer capacitance (VCE = 25V, VGE = 0V, f = 1 MHz) : 110pF
       Turn ON delay time (VCC = 600V, VGE = 15V, IC = 25A RGon = 47Ω) : 75nS to 150nS

       Rise time (VCC = 600V, VGE = 15V, IC = 25A RGon = 47Ω) : 65nS to 130nS

       Turn-off delay time (VCC = 600V, VGE = -15V, IC = 25A RGon = 47Ω) : 400nS to 600nS

       Fall time (VCC = 600V, VGE = -15V, IC = 25A RGon = 47Ω) : 50nS to 100nS

     

    How it use:, 

    Three phase motor controller using IGBT

    SupplierFile/202006/03/f_9e3e5a56b78d47998b40ee9bfba966a9.png

    DC Motor driver using Chopper Circuit using IGBT

    SupplierFile/202006/03/f_dbc31f853f4b4339884d3d65e8c3f1d1.png


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