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Descripción de producto
Transistor Module Medium Power Switching Use Insulated Type
Título
Modules
Todos los nombres de productos, marcas registradas, marcas y logotipos utilizados en este sitio son propiedad de sus respectivos dueños. La representación, descripción o venta de productos con estos nombres, marcas comerciales, marcas y logotipos es solo para fines de identificación y no pretende indicar ninguna afiliación o autorización por parte de ningún titular de derechos.
Introduction:
Transistors are, for the most part, simple types of active circuitry that can increase, or increase, the strength of electrical signals. They do this by transferring power, usually from a DC power source, to a signal. The operation of many transistor amplifier circuits can be accurately described as changing the power output of a power input signal in such a way that the output signal is a high-power replica of the input signal.
Core Parameters:
● UL recognized
● Insulated type
● Current of collector 50A
● Current gain DC 75
Circuit Diagram:
Working:
Transistor performance depends on the pn junctions, produced by doping silicon with dirty atoms that provide either excess or lack of electrons in the interacting atoms of the atoms in the semiconductor crystal structure. Silicon forms a crystal structure in which each atom shares four electrons with its neighbor to form covalent bonds. These four electrons are in the outermost layer of each atom, and they are called valence electrons, and they form bonds. Doping imports atoms with three or five valence electrons in a crystal structure, and these atoms form bonds with silicon atoms either with or without a single electron or with one additional electron.
Applications:
● Welders
● Switch mode power supplies
● Uninterruptable power supply
● Motor controls AC & DC
Vista previa de las 3 primeras páginas de la ficha técnica
Algún número de pieza del mismo fabricante
Some Part number from the same manufacture Mitsubishi Electronics Inc. |
QM50TX-HB Transistor Module Medium Power Switching Use Insulated Type |
QM5HG-24 Transistor Module, Medium Power Use Insulated Type, Glass Passivation Type |
QM600HD-M 600A - Transistor Module For Medium Power Switching Use, Non-insulated Type |
QM75CY-H Transistor Module High Power Switching Use Insulated Type |
QM75DY-24 |
QM75DY-24B |
QM75DY-2H |
QM75DY-2HB |
QM75DY-H |
QM75DY-HB |
QM75E2Y |
QM75E2Y-2H Transistor Module High Power Switching Use Insulated Type |
QM75E2Y-H High Power Switching Use Insulated Type |
QM75E2Y/E3Y-H |
QM75E2Y/E3Y2H |
QM75E2Y0H Transistor Module High Power Switching Use Insulated Type |
QM75E3Y-2H |
QM75E3Y-H |
QM75HA-H |
QM75TF-HB |
QM75TX-H |
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BFP640F : NPN Silicon Germanium RF Transistor. NPN Silicon Germanium RF Transistor* High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure at 1.8 GHz Outstanding noise figure at 6 GHz High maximum stable gain Gms at 1.8 GHz Gold metallization for extra high reliability ESD: Electrostatic. EFC240D : GaAs. Low Distortion GAAS Power Fets. +31.0dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz HIGH BVgd FOR 10V BIAS X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 40mA PER BIN RANGE SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output. FTS1018 : . s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10µs, duty cycle1% Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage. IRF9240 : P-channel Power MOSFET. PCHANNEL POWER MOSFET HIGH VOLTAGE INTEGRAL PROTECTION DIODE AVAILABLE TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES Note: IRFNxxxx also available with pins 1 and 3 reversed. TO3 (TO204AA) Metal Package SM TO220 Ceramic Surface Mount Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS VDGR VGS ID IDM PD ILM Tj Tstg. PMWD19UN : PMWD19UN; Dual Utrenchmos (tm) Ultra Low Level FET;; Package: SOT530-1 (TSSOP8). SMCJ7V5A : 1500 Watt Transient Voltage Suppressors. Glass passivated junction. 1500 W Peak Pulse Power capability Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 µA above 10V. UL certified, UL #E210467. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL. UPA1764 : Switching Dual N-channel Power MOSFET Industrial Use. The µPA1764 is N-channel MOS Field Effect Transistor designed for high current switching applications. Dual chip type Low On-state Resistance 27 m (TYP.) (VGS 32 m (TYP.) (VGS 34 m (TYP.) (VGS = 3.5 A) Low input capacitance Ciss 1300 pF (TYP.) Built-in G-S protection diode Small and surface mount package (Power SOP8) Drain to Source Voltage Gate to Source. 05002270CMZC : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000027 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 2.70E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology. 05369-T099 : 8 W, SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 500000 Hz ; Standards: RoHS. CXTA42LEADFREE : 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC PACKAGE-3. EPB5035G-RC : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS. IRGC50B60KB : 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: 150 MM, WAFER ; Number of units in IC: 1. RW1500KE : RESISTOR, POTENTIOMETER, WIRE WOUND, 1 TURN(S), 1 W, 50 ohm. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Standards and Certifications: RoHS ; Resistance Range: 50 ohms ; Tolerance: 10 +/- % ; Power Rating: 1 watts (0.0013 HP). SNR4030-100M : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Rated DC Current: 1500 milliamps ; Operating Temperature: -25 to 120 C (-13 to 248 F). SPD10192 : 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5. s: Package: HERMETIC SEALED PACKAGE-1 ; Number of Diodes: 1 ; VRRM: 800 volts ; IF: 35000 mA ; trr: 0.2500 ns. TNR32HP102K310 : RESISTOR, VOLTAGE DEPENDENT, 825 V, 620 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, Radial Leads, RADIAL LEADED ; Power Rating: 1.2 watts (0.0016 HP) ; Operating DC Voltage: 825 volts ; Operating Temperature: -40 to 85 C (-40 to 185 F). V141HF34 : RESISTOR, VOLTAGE DEPENDENT, 188 V, 291 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis, HALOGEN FREE AND ROHS COMPLIANT ; Power Rating: 2 watts (0.0027 HP) ; Operating DC Voltage: 188 volts ; Operating Temperature: -55 to 85 C (-67 to 185 F) ; Standards and Certifications: RoHS. YA862C15R : 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, High Voltage ; IF: 10000 mA ; Package: TO-220, PLASTIC, TO-220, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2. 36D103G075CC2A : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, CHASSIS MOUNT. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 75 (+/- %) ; WVDC: 75 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: 85 C (185. |
2011 reseñas de compradores de Spain
Sarah Jackson
Length of registration:7 years
This integrated circuit is great! It was easy to install and I haven't had any issues with it. The performance is excellent and it's been a great addition to my system. Highly recommended!
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03/17/2023
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Normalmente se aceptan devoluciones cuando se completan dentro de los 60 días a partir de la fecha de entrega del paquete.
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Todas las compras de UTSOURCE tienen una política de devolución de dinero de 60 días, más una garantía de UTSOURCE de 90 días contra cualquier defecto de fabricación. Esta garantía no se aplicará a ningún artículo donde los defectos hayan sido causados por un montaje incorrecto del cliente, el incumplimiento del cliente de seguir las instrucciones, la modificación del producto , operación negligente o inadecuada.
QM50TX-H
QM50TX-H tiene varias marcas en todo el mundo que pueden tener nombres alternativos para QM50TX-H debido a diferencias o adquisiciones regionales. QM50TX-H también se conoce con los siguientes nombres:
OPCIONES DE COMPRA
Estado de existencia: 5000
Mínimo: 1
Precio Total:
Precio unitario:20.99116
UTSOURCE
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