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Description
High Speed Switching NPN Silicon Epitaxial Transistor Power Mini Mold
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Preview of the first 3 pages of the data sheet
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EE2-9 : Compact And Lightweight, High Breakdown Voltage, Surface Mounting Type MC-4R64CPE6C-845 : Direct RAMbus DRAM Rimm Module 64m-byte 32m-word X 16-bit PS7221-2A-F3 : 8-pin Sop 200 V Break Down Voltage 2-ch Optical Coupled MOSFET UPD6604GS-XXX-GJG-T1 : 4-bit Microcomputer For Infrared Remote-controlled UPD784217AGC-XXX-8EU : 78K/4 16-bit SC µPD750106 : 75XL Family UPD4482322GF-A44 : 8m-bit CMOS Synchronous FAST SRAM Pipelined Operation Double Cycle Deselect FA4L3Z : Resistor Built-in TYPE NPN Transistor UPD442002F9-BC70X-BC2-A : 2m-bit CMOS Static RAM 128k-word BY 16-bit Extended Temperature Operation UPD7227 : Cmos, Intelligent, Dot-matrix LCD Controller/driver UPB429-2 : 2048 x 8-bit Bipola TTL PROM |
Same catergory
Same catergory |
ED1002CT : Super Fast Recovery Rectifier ( Voltage - 200 to 600 Volts Current - 10.0 Amperes ). HSU226 : . Silicon Schottky Barrier Diode for High Speed Switching Low reverse current, Low capacitance. Ultra small Resin Package (URP) is suitable for surface mount design. Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 10 ms Sine Wave 1 pulse Symbol VRRM IFSM IF Tj Tstg. MAC997A6 : Sensitive Gate Triacs, Package: TO-92 (TO-226), Pins=3. Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92 package which is readily adaptable for use in automatic insertion equipment. OnePiece, InjectionMolded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants). S4-12VDC : Relay PCB 4pno. UTC2SA1015 : . *Collector-Emitter Voltage: BVCEO=-50V *Collector current to 150mA *High hFE linearity *Complement to 2SC1815 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Base current Junction Temperature Storage Temperature Collector-base. ZTX450 : NPN Low Sat Transistor. ISSUE 2 MARCH 1994 * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO CM IC Ptot Tj:Tstg ZTX450 PARAMETER Collector-Base Breakdown. 0805S800000T50 : JUMPER, METAL GLAZE/THICK FILM, 0.125 W, 0 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP ; Resistance Range: 0.0 ohms ; Power Rating: 0.1250 watts (1.68E-4 HP) ; Operating Temperature: -55 to 155 C (-67 to 311 F) ; Standards. BY255-LF : 3 A, 1300 V, SILICON, RECTIFIER DIODE, DO-201AD. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 1300 volts ; IF: 3000 mA. DSK5J01 : 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; PD: 150 milliwatts ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN ; Number of units in IC: 1. DZ2J039 : 3.9 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS. EPC3492G-LF : 25 W, SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 100000 Hz ; Input Voltage: 10 to 57 volts ; Output Voltage: 24 volts ; Operating Temperature: 0 to 70 C (32 to 158 F). FT1500CH-54 : 2355 A, 2700 V, SCR. s: VDRM: 2700 volts ; VRRM: 2700 volts ; IT(RMS): 2355 amps ; IGT: 250 mA ; Package Type: FLAT PACKAGE. GQM22M5C2H100GB01B : CAPACITOR, CERAMIC, MULTILAYER, 500 V, C0G, 0.00001 uF, SURFACE MOUNT, 1111. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 500 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology. LV2931E50R : S BAND, Si, NPN, RF POWER TRANSISTOR. s: Polarity: NPN ; Number of units in IC: 1. SK75MLI066T : 83 A, 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: CASE T 88, SEMITOP 4, 24 PIN ; Number of units in IC: 4. TDZ13B : 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS. VS-15TQ060-N3 : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier. 222205716151 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 150 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 150 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 400 volts ; Leakage Current: 364 microamps ; ESR: 1000 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -25 to 85 C (-13 to 185 F). 2SK2832-01R : 50 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0200 ohms ; Package Type: TO-220, TO-220AB, 3 PIN. |
10000 buyer reviews from United States
Mikheil Mchedlishvili
Length of registration:1 years
Service was great,Parts arrived when promised.If I do need parts in a future, you are on my list.Thank you.
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12/01/2022
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2SC3735
2SC3735 has several brands around the world that may have alternate names for 2SC3735 due to regional differences or acquisition. 2SC3735 may also be known as the following names:
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