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Description
35A, 1200V, NPT Series N-channel Igbt With Anti-parallel Hyperfast Diode
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The HGTG10N12OBND is a Non-Punch Through (NPT) IGBT design.This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.The IGBT used is the development type TA49290.The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49302.
Preview of the first 3 pages of the data sheet
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CD4528BC : CMOS/BiCMOS->4000 Family Dual Monostable Multivibrator FDS6678A : 30V N-channel Powertrench MOSFET FQPF9N25C : 250V N-channel Advance Q-FET C-series KSC838 : NPN Epitaxial Silicon Transistor MMPQ2369 : NPN Switching Transistor Not Recommended For New Designs PN4392 : N-channel Switch SPT7814ACN : 10-bit, 40 Msps, Ecl Output A/D Converter MCT210M : Phototransistor Optocouplers HLMP1523 : LEDs -; LED SS HI EFF GREEN DIFF 3MM Specifications: Color: Green ; Lens Style/Size: Round with Domed Top, 3mm, T-1 ; Millicandela Rating: 10mcd ; Voltage - Forward (Vf) Typ: 2.2V ; Wavelength - Dominant: - ; Wavelength - Peak: 562nm ; Current - Test: 20mA ; Viewing Angle: 90° ; Lens Type: Diffused, Tinted ; Luminous Flux @ Current - T |
Same catergory
Same catergory |
2N6077 : Screening Options Available = ;; Polarity = NPN ;; Package = TO66 (TO213AA) ;; Vceo = 275V ;; IC(cont) = 7A ;; HFE(min) = 12 ;; HFE(max) = 70 ;; @ Vce/ic = 1V / 1.2A ;; FT = 1MHz ;; PD = 45W. AT405 : . Repetitive voltage up to Mean on-state current Surge current 2.8 kA Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM Mean on-state current Mean on-state current Surge on-state current I² t On-state voltage Threshold voltage. BCX71J : Epitaxial. PNP Epitaxial Silicon Transistor. D5809N : . Maximum rated values repetitive peak reverse voltage tvj t vj max VRRM A 2s non-repetitive peak reverse voltage tvj t vj max RMS forward current mean forward current 130 °C Charakteristische Werte Durchlaßspannung Schleusenspannung Ersatzwiderstand Sperrstrom Characteristic values on-state voltage threshold voltage slope resistance reverse current tvj t vj max 18 kA tvj t vj max tvj t vj max tvj t vj max RRM VT VT(TO). EGP20D : Glass Passivated. 2.0A Ultra Fast Recovery Rectifier. Glass passivated cavity-free junction. High surge current capability. Low leakage current. Superfast recovery time for high 20A 20B Maximum Repetitive Reverse Voltage Average Rectified Forward Current,.375 " lead length = 55°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature. KTA1267L : = Low Noise Transistor ;; Package = TO-92M. NTE219 : Silicon Power Transistor Audio Power Amp, Medium Speed Switch. NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch : The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors a TO3 type case designed for general purpose switching and amplifier applications. : D DC Current Gain: hFE 4A D CollectorEmitter Saturation Voltage: VCE(sat) = 1.1V (Max) 4A D Excellent. SMAJ188 : Transil(tm). PEAK PULSE POWER W (10/1000µs) STAND OFF VOLTAGE RANGE : From to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE The SMAJ series are TRANSILTM diodes designed specifically for protecting sensitive equipment against transient overvoltages. The SMA package allows save spacing on high density printed. UNRF2A4 : RETs (Resistor Equipped transistors). Marking = 2Y ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = ML3-N2. NSR0130 : 30V Small Signal Schottky Low Leakage Product These SOD723 Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount SOD-723 package is excellent for hand-held and portable applications where space is limited. * Extremely. PBSS5630PA : 30 V, 6 A PNP Low VCEsat (BISS) Transistor PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4630PA.. 0402X681J101NT : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00068 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 6.80E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style:. GRM1551X1E181JZ01B : CAPACITOR, CERAMIC, MULTILAYER, 25 V, SL, 0.00018 uF, SURFACE MOUNT, 0402. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.80E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Temperature Coefficient: -2.86 ppm/°C ; Mounting Style: Surface. HSC300330RJ : RESISTOR, WIRE WOUND, 300 W, 5 %, 30 ppm, 330 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 330 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 30 ±ppm/°C ; Power Rating: 300 watts (0.4021 HP). SRP200-2 : RESISTOR, TEMPERATURE DEPENDENT, PTC, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD) ; Power Rating: 1.6 watts (0.0021 HP) ; Operating Temperature: -40 to 85 C (-40 to 185 F). STGP3NB60FDFP : 6 A, 600 V, N-CHANNEL IGBT, TO-220AB. s: Polarity: N-Channel ; Package Type: TO-220, TO-220FP, 3 PIN ; Number of units in IC: 1. 2R5TPL470M7 : CAPACITOR, TANTALUM, SOLID POLYMER, POLARIZED, 2.5 V, 470 uF, SURFACE MOUNT, 2917. s: Configuration / Form Factor: Chip Capacitor ; General : Polarized ; Capacitance Range: 470 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2.5 volts ; Leakage Current: 235 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 2917 ; Operating Temperature:. 400KXF56MEOESN20X20 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 56 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 56 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 400 volts ; Leakage Current: 449 microamps ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13 to 221 F). 933429280127 : 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB. s: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Package Type: PLASTIC, SC-46, 3 PIN ; Pin Count: 3 ; VDRM: 600 volts ; IT(RMS): 8 amps ; Standards and Certifications: RoHS. |
10000 buyer reviews from United States
Kimberly Edwards
Length of registration:7 years
I recently ordered an IC HGTG10N120BND from your company and am very pleased with the product. It is a high-performance IGBT with a wide operating temperature range and low gate charge, making it ideal for my application. The product arrived quickly and in excellent condition. I am very satisfied with the function and performance of the IC HGTG10N120BND. Thank you for providing such a qu product.
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03/17/2023
ANDREY SEMYONOV
Length of registration:9 years
The goods are very satisfied, quality is very good, the seller is reliable, I recommend.
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11/11/2018
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HGTG10N120BND
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