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Description
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Vces=600V, Vceontyp.=1.72V, @Vge=15V, Ic=20A
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Features
● UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching,>200kHz in resonant mode
● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
● IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
● Industry standard TO-247AC package
Benefits
● Generation -4 IGBT's offer highest efficiencies available
● IGBT's optimized for specific application conditions
● HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
● Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Preview of the first 3 pages of the data sheet
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10000 buyer reviews from United States
Robert Williams
Length of registration:7 years
The IRG4PC40UD is a high-performance integrated circuit from Infineon Technologies. It is a fast-switching IGBT (Insulated Gate Bipolar Transistor) with a maximum current rating of 40A and a maximum voltage rating of 600V. It is designed for use in a wide range of applications, including motor control, power conversion, and renewable energy systems. The IRG4PC40UD is a reliable and efficient solut
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03/17/2023
Kataev Mikhail Georgievich
Length of registration:13 years
Very good!
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12/17/2018
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IRG4PC40UD
IRG4PC40UD has several brands around the world that may have alternate names for IRG4PC40UD due to regional differences or acquisition. IRG4PC40UD may also be known as the following names:
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