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Country CodeFAIRCHILD
IXYS
ON SEMICONDUCTOR
SIEMENS APT
SILAN MICROELECTRONICS
ROHM SEMICONDUCTOR
INFINEON
Your search 60N60 and relate product result :195 items
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Description: The SGT60N60FD1PN is a N-channel IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics. It is designed for use in high-power switching applications such as motor con
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Package: TO-247 Manufacturer: ON/Fairchild Description: FGH60N60SFDTU is a N-channel MOSFET transistor with a maximum drain-source voltage of 600V and a maximum drain current of 60A. Features: - Low
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Description: FGH60N60SFD is a N-channel insulated gate bipolar transistor (IGBT) with a maximum collector current of 60A and a maximum collector-emitter voltage of 600V. Features: Low on-state resis
Stock:10000
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TO-247
On/fairchild
HiPerFAST IGBT with Diode
: Description: FGH60N60SFD is a 600V N-Channel MOSFET manufactured by ON Semiconductor/Fairchild. Features: Low gate charge Low on-state resistance Fast switching Avalanche rated RoHS compliant
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Stock:2000
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Description: IXGH60N60C2 is a high voltage MOSFET from IXYS. It is offered in a TO-247 package, which has a thermally conductive interface material for improved thermal performance. Features: 600V
Stock:10000
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Description: IXYS N-Channel MOSFET Features: 600V, 60A, RDS(on) = 0.0075Ω Low gate charge Low input capacitance Fast switching Avalanche rated RoHS Compliant Applications: Switching application
Stock:2000
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TO-3P
IXYS
06+
Fast SRAM > Late Write Synchronous SRAM; Organization word: 512K; Organization bit: x 36; Memory capacity bit: 16M; Supply voltage V: 150; Operating temperature °C: 1.5; Package: BGA 119
Description: IXGX60N60C2D1 is a 600V, 60A, N-Channel IGBT, manufactured by IXYS. Features: Low on-state voltage Low gate charge Low switching losses High speed switching High current ca
Stock:10000
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Description: FGH60N60SFD is a N-Channel MOSFET transistor manufactured by Fairchild Semiconductor. Features: Low gate charge Low on-resistance Fast switching Avalanche Energy Rated RoHS Compliant
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Description: IXGR60N60C2D1 is a 600V, 60A IGBT module manufactured by IXYS. Features: Low gate charge Low saturation voltage High speed switching High current capability Low thermal resistance
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Package: TO-3PL Manufacturer: Fairchild Description: The G160N60UFD is an N-channel MOSFET manufactured by Fairchild. It is a 600V, 160A device in a TO-3PL package. Features: - Low gate charge - Low
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Description: N-channel UltraFET Power MOSFET Features: Low On-Resistance Low Gate Charge Fast Switching Improved dv/dt Capability Avalanche Energy Rated RoHS Compliant Applications
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Description: IXGH60N60 is an insulated gate bipolar transistor (IGBT) manufactured by IXYS. It is a high voltage, high speed, and low on-state resistance device. Features: High voltage: 600V High
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MODULE Description: This is a module from IXYS, an integrated circuit and power semiconductor company. It is an Insulated Gate Bipolar Transistor (IGBT) module, with a voltage rating of 600V and a cur
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company