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2SC3281 Bipolar Junction Transistor, NPN Type, TO-247VAR
  • 2SC3281
  • 2SC3281
  • 2SC3281
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Description

Bipolar Junction Transistor, NPN Type, TO-247VAR

  • Transistor Type: NPN
  • DateCode: 15+
  • Package / Case: TO-3PL
  • Maximum Collector-Base Voltage (VCBO): 180 V
  • Maximum Collector-Emitter Voltage (VCEO): 160 V
  • Maximum Emitter-Base Voltage (VEBO): 5 V
  • Maximum Collector Current (IC): 15 A
  • Maximum Power Dissipation (Ptot): 150 W
  • DC Current Gain (hFE) @ IC = 8A: 55 - 160
  • Transition Frequency (fT): 30 MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)): 3 V (max)
  • Package Type: TO-3P
  • Operating Temperature Range (Tj): -65°C to +150°C

All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

The parameters and performance indicators of this product are sourced from the internet. In case of discrepancies, please refer to the manufacturer's technical specifications!!

Product Attributes

  • Parameter Symbol Min Typ Max Unit
    Collector-Emitter Voltage VCE - - 80 V
    Collector-Base Voltage VCB - - 80 V
    Emitter-Base Voltage VEB -5 - 5 V
    Collector Current IC - 15 15 A
    Base Current IB - 3 3 A
    Power Dissipation PT - - 90 W
    Junction Temperature TJ -55 - 150 °C
    Storage Temperature TSTG -65 - 150 °C
    Thermal Resistance RθJC - - 1.5 °C/W

    Instructions for Use:

    1. Mounting:

      • Ensure proper heat sinking to maintain junction temperature within specified limits.
      • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
    2. Biasing:

      • Set the base current (IB) to ensure the transistor operates in the desired region (saturation, active, or cutoff).
      • Avoid exceeding the maximum base current to prevent damage.
    3. Voltage Ratings:

      • Do not exceed the maximum collector-emitter voltage (VCE) and collector-base voltage (VCB).
      • Ensure the emitter-base voltage (VEB) remains within the specified range to avoid reverse breakdown.
    4. Current Handling:

      • The collector current (IC) should not exceed the maximum rating to prevent overheating and potential failure.
      • Monitor the power dissipation (PT) to ensure it stays within the safe operating area.
    5. Temperature Management:

      • Keep the junction temperature (TJ) within the specified range to ensure reliable operation.
      • Store the transistor in a controlled environment within the storage temperature range (TSTG).
    6. Handling:

      • Handle the transistor with care to avoid mechanical damage.
      • Use appropriate ESD protection to prevent damage from static electricity.
    7. Testing:

      • Test the transistor parameters using a suitable test setup to ensure it meets the specifications.
      • Verify the thermal resistance (RθJC) to ensure adequate cooling during operation.
    (For reference only)

Features

   VCBO Collector-base voltage Open emitter 200V

   VCEO Collector-emitter voltage Open base 200V

   VEBO Emitter-base voltage Open collector 5V

   IC Collector current 15A

   IB Base current 1.5A

   PC Collector power dissipation TC=25℃ 150W

   Tj Junction temperature 150℃

   Tstg Storage temperature -55~150℃

 

Description

Transistor is a semiconductor device that is used for switching or amplification of electrical signals and have at least three terminals. Power transistors are devices which are designed to withstand large currents and are thus used in power intensive applications.

2SC3281 is a silicon NPN power transistor. Transistors are generally manufactured from pure silicon or germanium however IC 2SC3281 is manufactured using silicon, these type of transistors are called bipolar junction transistors because they can conduct using both types of charge carriers. IC under reference is in NPN configuration which means it has N-type emitter, collector and P-type base.

 

Pictorial View

A pictorial view of the IC 2SC3281 is shown in figure below

SupplierFile/202006/04/f_e5fc04237ba043c088da4cefcf239fad.png

IC 2SC3281 is available with TO-3PL package and it can complement to IC 2SA1302 which is a high power PNP silicon transistor.

 

Pin Description

Pin description of the IC 2SC3281 is given below

Pin

Description

Doping

1

Base

P- type

2

Collector

N-type

3

Emitter

N-type

 

IC Electrical Characteristics/ Specifications

IC 2SC3281 is available as single discrete electrical component (transistor), IC can be mounted on printed circuit boards in through hole configuration. Some core parameters of the IC are given below

Parameter

Description

Value

Transistor type

NPN

-

Material

Silicon

-

IC

Collector current

15A

IB

Base current

1.5A

Power

Max Power

150W

hFE

DC current gain

55-160

fT

Transition frequency

25MHz

VCBO

Collector-base voltage (Open emitter)

200V

VCEO

Collector-emitter voltage (Open base)

200V

VEBO

Emitter-base voltage (Open collector)

5V

Tstg

Storage temperature

-55~150

 

Working Principle

Since IC 2SC3281 is a NPN transistor, transistors can be used as switching device or as an amplifier depending upon the requirement of the user. To use the transistor as switch, it has to be operated in cut-off or in saturation region of its characteristic curve, which represents the OFF and ON switch accordingly. In order to use the transistor as an amplifier it has to be so biased that the operates in the active region of its characteristic curve.

 

Applications

IC 2SC3281 Silicon NPN power transistor IC is widely used for the following applications

   Power amplifier

   General purpose amplifier

   100W high fidelity audio frequency amplifier output stage

   Switching applications

 

As Switch

Transistors can be used as a switch, similarly IC 2SC3281 can also be used as a switch. As described earlier to use a transistor as a switch it has to be operated in cutoff and saturation region.

SupplierFile/202006/04/f_f60ac2d1f9a2440081d5f5fcce664da1.png

Transistor utilized as switch in grounded emitter configuration is shown in figure. When switch “S” is closed a signal is applied to base of the transistor and it begins to conduct, transistor will be operating in saturation mode. The load connected to the collector terminal of the IC 2SC3281 will being to operate. It is important to note here, since the maximum current rating of IC 2SC3281 is 15A, a load having current rating of more than 15A should not be directly used with transistor.

 

As Amplifier

SupplierFile/202006/04/f_6f3a823bd09346f5bc3e33a46e044256.png



IC 2S3281 is a power transistor, it is used in high power applications specially in high power amplifiers. A 100-watt power amplifier by MOTOROLA using IC 2SC3281 is shown in figure above. The input stage of the circuit consists of the complementary pair transistors, second stage provides the initial voltage gain also called trans conductance stage and finally IC 2SC3281 is employed to achieve the power gain of up to 100watts

 


QUANTITY UNIT PRICE PLUS UNIT PRICE TOTAL PRICE
≥1: US $1.75266 US $1.64750 US $1.64750
≥51: US $1.61634 US $1.51936 US $77.48736

Substitute (equivalent) Product

Substitute Product Brief Description
2SC3281 Original NPN transistor with low distortion and a high power output for audio applications.
2SC5200 NPN transistor with similar power and high-frequency response, ideal for audio power amplifiers.
2SC2922 High power NPN transistor with excellent high-frequency performance, suitable for power amplifiers.
2SC5242 Powerful NPN transistor for high-power audio applications, known for reliability and low distortion.
MJ21194 High-power NPN transistor with wide frequency bandwidth, commonly used in audio circuits.
BD249C NPN power transistor used in general-purpose and audio amplifier applications with good durability.
NJW0281G Modern NPN transistor designed for high-fidelity audio applications and high efficiency.
TIP35C NPN power transistor used for general-purpose power amplification with high current capacity.

Product Usage

The 2SC3281 is an NPN power transistor commonly used in various high-power amplification applications. Here are a few types of circuits where this transistor might be utilized:

  1. Audio Power Amplifiers:

    • The 2SC3281 is especially popular in audio power amplifiers due to its high current gain bandwidth product and high power handling capabilities. It can be used in both Class AB and Class A amplifier designs.
  2. Linear Power Supplies:

    • In regulated power supply designs, the 2SC3281 can act as the pass transistor for voltage regulation, providing stable and robust performance.
  3. DC-DC Converters:

    • High-power DC-DC converters might use the 2SC3281 in their switching stages to handle high current loads efficiently.
  4. RF Amplifiers:

    • The transistor can also be used in RF amplifier circuits, though care must be taken with frequency limitations to ensure proper operation without excessive heat generation.
  5. Motor Control Circuits:

    • In some motor control applications, high-power BJTs like the 2SC3281 are used to control the power delivered to DC motors.
  6. Inverters and UPS Systems:

    • The 2SC3281 can be used in inverter circuits or uninterruptible power supply (UPS) systems as part of the switching mechanism to convert DC to AC power.
  7. Switching Regulators:

    • The transistor might be used in the design of switching regulators to efficiently convert one DC voltage level to another.

When using the 2SC3281, it is essential to check its specifications such as the maximum collector current (IC), maximum collector-emitter voltage (VCE), power dissipation, and gain characteristics to ensure it matches the requirements of the circuit in question. Proper thermal management is also crucial due to the high power levels typically involved.

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