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Description
Silicon RF Devices RF High Power MOS FETs (Discrete) RD70HVF1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
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QUANTITY | UNIT PRICE | PLUS UNIT PRICE | TOTAL PRICE |
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≥1: | US $25.30800 | US $23.78952 | US $23.78952 |
≥5: | US $24.60500 | US $23.12870 | US $115.64350 |
≥10: | US $23.19900 | US $21.80706 | US $218.07060 |
≥20: | US $22.49600 | US $21.14624 | US $422.92480 |
≥50: | US $21.79300 | US $20.48542 | US $1024.27100 |
≥100: | US $21.09000 | US $19.82460 | US $1982.46000 |
≥200: | US $20.38700 | US $19.16378 | US $3832.75600 |
≥500: | US $19.96520 | US $18.76729 | US $9383.64500 |
≥1000: | US $19.68400 | US $18.50296 | US $18502.96000 |
Substitute (equivalent) Product
Please find below a table listing substitute products for the RD70HVF1 and RD70HVF1-101, along with brief descriptions.
Product Name | Description |
---|---|
MRF247 | NPN silicon RF power transistor designed for high-power Class C amplifier and oscillator applications. |
MRF154 | N-channel enhancement-mode MOSFET specifically intended for RF power amplifiers in commercial communication applications. |
BLF545 | RF power MOSFET transistor for wideband communications, which can be used in applications up to 175 MHz. |
BLF177 | RF power MOSFET for broadcast and communication transmitters, suitable for linear and non-linear applications. |
2SC2879 | High-frequency NPN transistor for use in RF power amplifiers, particularly in HF and VHF communication systems. |
These links lead to the respective product pages where you can find more detailed information and make a purchase if needed.
Product Usage
The RD70HVF1 and RD70HVF1-101 are high-frequency power MOSFET transistors manufactured by Mitsubishi. These devices are designed for RF (radio frequency) applications. Here are some applications where these MOSFETs are commonly used:
RF Power Amplifiers: These transistors are often used in RF power amplifiers for communication systems, including amateur radio, public safety communications, and other professional RF applications.
FM Transmitters: They are suitable for use in FM broadcast transmitters due to their ability to handle high frequencies and power levels.
VHF and UHF Amplifiers: The RD70HVF1 is well-suited for amplifiers that operate in the Very High Frequency (VHF) and Ultra High Frequency (UHF) bands.
Industrial, Scientific, and Medical (ISM) Applications: These MOSFETs are also used in ISM applications where high-frequency power generation is required, such as RF heating, medical imaging, and other similar applications.
Telecommunication Infrastructure: They can be used in base station amplifiers and other infrastructure equipment for mobile and wireless communications.
The main difference between RD70HVF1 and RD70HVF1-101 is that the latter is a slightly modified version, often in terms of packaging or minor design tweaks to meet specific application needs or to enhance performance.
Always consult the manufacturer’s datasheet and application notes for specific details on compatible circuits, recommended operating conditions, and design guidelines to ensure optimal performance and reliability when using these components.
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RD70HVF1,RD70HVF1-101
RD70HVF1,RD70HVF1-101 has several brands around the world that may have alternate names for RD70HVF1,RD70HVF1-101 due to regional differences or acquisition. RD70HVF1,RD70HVF1-101 may also be known as the following names:
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