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Description
NPN Epitaxial Silicon Transistor
Title
Epitaxial
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Preview of the first 3 pages of the data sheet
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74VHC08MTC : CMOS/BiCMOS->VHC/VHCT/74V1 Family->Low Voltage Quad 2-Input And Gate DM74AS1805 : Bipolar->AS Family Hex 2-Input Nor Driver DM74LS09N : Bipolar->LS Family Quad 2-Input And Gate With Open-collector Outputs FAN1117AX25 : 1A Adjustable/fixed Low Dropout Linear Regulator PZTA06 : Amplifier Small Signal Transistor PN918_01 : NPN RF Transistor 74ACT74SCX_SF86787A : Logic - Flip Flop Integrated Circuit (ics) Surface Mount Tape & Reel (TR) 24mA, 24mA 4.5 V ~ 5.5 V; IC FLIP FLOP DUAL D POS 14SOIC Specifications: Mounting Type: Surface Mount ; Package / Case: 14-SOIC (0.154", 3.90mm Width) ; Function: Set(Preset) and Reset ; Number of Bits per Element: 1 ; Number of Elements: 2 ; Current - Output High, Low: 24mA, 24mA ; Output Type: Differential ; Trigger Type: Positive Edge ; Type: D-Type ; BSS84_D87Z : Fet - Single Discrete Semiconductor Product 130mA 50V 360mW Surface Mount; MOSFET P-CH 50V 130MA SOT-23 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET P-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 50V ; Current - Continuous Drain (Id) @ 25° C: 130mA ; Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V ; Input Capacitance (Ciss) @ Vds: 73pF @ 25V ; Power - Max: 360mW ; Packaging: Ta BSS84S62Z : 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 50 volts ; rDS(on): 10 ohms ; PD: 360 milliwatts ; Number of units in IC: 1 |
Same catergory
Same catergory |
21DQ10 : Device = SBD ;; Ripetitive Peak Reverse Voltage(V) = 100 ;; Average Rectified Current(A) = 1.7 ;; Condition(cace or Ambient Temperature) = Ta=43 ;; Surge Forward Current(A) = 70 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 0.85 ;; Peak Forward Current(A) = 2 ;; Peak Reverse. DTD143TK : . F 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only. HS1A : Glass Passivated. Pakage = SMA/DO-214AC ;; Max. Reverse Voltage VRM (V)= 50 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30. SPI11N60C3 : High Voltage. For Lowest Conduction Losses & Fastest Switching. Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt Gate source voltage static Gate source. SR150SS15 : Surface Mount Schottky Barrier Rectifier ( Voltage Range - 20 to 80 Volts Current - 1.0 Ampere ). STGD3NB60K : N-channel 6A - 600V TO-220/DPAK Short Circuit Proof Powermesh Igbt. N-CHANNEL TO-220 / DPAK SHORT CIRCUIT PROOF PowerMESHTM IGBT HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed. VHFD29-08IO1 : Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode And Field Diodes. PBSS5420D : 20 V, 4 A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D. Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency leading to less. FSS110SMBHE3TRTB : SIGNAL DIODE. s: Diode Type: General Purpose. FSS115SMB 1.0 Amp. Surface Mount Schottky Barrier Rectifier Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High forward surge current capability Solder dip 260ºC, 10s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Meets MSL level 1, per J-STD-020,. HP7 : RESISTOR, METAL FOIL, 0.3 W, 0.005 - 1 %, 1 - 50 ppm, 10 ohm - 25000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Metal Foil ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ThroughHole, LEAD/ROHS COMPLIANT ; Operating DC Voltage: 300 volts ; Operating Temperature: -55 to 175 C (-67 to 347 F). M904E402A000 : CAPACITOR, MICA, 4000 V, 0.9 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Mica ; Capacitance Range: 0.9000 microF ; WVDC: 4000 volts ; Mounting Style: Through Hole. SFOB1870-100100 : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 10 microH ; Operating Temperature: -40 to 85 C (-40 to 185 F). VM08S : 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 25000 mA ; Package: PLASTIC PACKAGE-4 ; Pin Count: 4 ; Number of Diodes: 4. 23425WFVZ : DIGITAL POTENTIOMETER, PDSO14. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), ROHS COMPLIANT, PLASTIC, MO-153AB-1, TSSOP-14. 2N3014.MOD : 200 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA. s: Polarity: NPN ; Package Type: HERMETIC SEALED, METAL, TO-18, 3 PIN. 3152-MF : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 64 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 64 microF ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: 100 C (212 F). 81R0LFM0407SCN48EA : CAP,AL2O3,1UF,50VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic. |
10000 buyer reviews from United States
Jennifer Hall
Length of registration:7 years
I recently purchased an IC KST2222A from your company, and I am very pleased with the product. It functions exactly as expected, and I am confident that it will serve my needs for a long time. I appreciate the quality of the product, and I am confident that it will last for many years. I am also pleased with the customer service I received from your company. The staff was knowledgeable and helpful
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03/17/2023
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KST2222A
KST2222A has several brands around the world that may have alternate names for KST2222A due to regional differences or acquisition. KST2222A may also be known as the following names:
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