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CM800E3U(E2U)-24H 2nd-Version   HVIGBT   (High   Voltage   Insulated   Gate   Bipolar   Transistor)   Modules

CM800E3U(E2U)-24H

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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Average lead time: 37.93 Hour

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Part Number Product Description Summary Stock Price Buy
CM800E3U(E2U)-24H 2nd-Version   HVIGBT   (High   Voltage   Insulated   Gate   Bipolar   Transistor)   Modules CM800E3U(E2U)-24H

1IGBT1DIO: 800A1200V

Mitsubishi

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2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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