IXGN60N60
Category: Modules
Description: Ultra-Low VCEsat IGBTVCES600V,VCEsat1.7V
Price range ($)
13.16672 16.76610
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Returns are normally accepted when completed within 60 days from the date of the parcel delivered.
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Warranty
All UTSOURCE purchases have a 60 days money back return policy, plus a 90 days UTSOURCE warranty against any manufacturing defects.This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation.
IXGN60N60
IXGN60N60 has several brands around the world that may have alternate names for IXGN60N60 due to regional differences or acquisition. IXGN60N60 may also be known as the following names:
All sellers
2
Brand new
2
Certified preowned
2
Official
2
Third Party
2
Description
IXGN60N60
Stock:9999 |
IXYS N/A |
Ultra-Low VCEsat IGBTVCES600V,VCEsat1.7V |
≥1: US $16.34490 US $15.36421 ≥5: US $15.43685 US $14.51064 ≥10: US $14.98282 US $14.08385 ≥20: US $14.52880 US $13.65707 ≥50: US $14.07478 US $13.23029 ≥100: US $13.89316 US $13.05957 ≥200: US $13.62075 US $12.80351 ≥500: US $13.43914 US $12.63279 ≥1000: US $13.16672 US $12.37672
More:
Inquiry
|
|
IXGN60N60
Stock:33932 |
IXYS 05+ |
Ultra-Low VCEsat IGBTVCES600V,VCEsat1.7V |
≥1: US $16.76610 US $15.76013 ≥5: US $15.83465 US $14.88457 ≥10: US $15.36892 US $14.44678 ≥20: US $14.90320 US $14.00901 ≥50: US $14.43748 US $13.57123 ≥100: US $14.25118 US $13.39611 ≥200: US $13.97175 US $13.13345 ≥500: US $13.78546 US $12.95833 ≥1000: US $13.50602 US $12.69566
More:
Inquiry
|
IXGN60N60
Stock:9992 |
IXYS 12+ |
Ultra-Low VCEsat IGBTVCES600V,VCEsat1.7V |
≥1: US $13.69060 US $12.86916
More:
Inquiry
|
Introduction:
Two key indicators in the design of IGBTs are used to improve mathematical performance and flexibility. One direction is punch-through (PT) technology that kills all-time and low-position loss. Another option is the nonpunch-through (NPT) technology which has a simple process for device development and low loss control. The NPT device has great blocking power while the PT is difficult to control during the high-speed device process. This paper makes a detailed comparison between PT and NPT devices for installation of hard-core applications.
Core Parameters:
· IGBT Module – N channel
· Emitter Maximum Voltage – 600V
· Time (Rise Time) – 1.9
· Current of the collector Max. – 101A
· Nature of Packaging – Isotopic in Nature
Circuit Diagram:
Working:
The IGBT combines low transistor voltage with high input impedance and MOSFET switching speed. The result obtained from this combination brings with it the characteristics of switching and output of a bipolar transistor, but voltage is regulated as a MOSFET. Current gain is a very important feature of the transistor and is expressed in hFE. When the Darlington transistor is turned off, then the current is available for load to the circuit.
Load current=i/p current X transistor gain
Applications:
· Used in switch mode power supplies (SMPS)
· Fast switching Applications
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Freight calculation
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 200$,Overweight will be charged separately
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