RJP30H1DPD
Category: IC Chips
Description: Silicon N Channel IGBT High speed power switching
Price range ($)
0.33432 0.83580
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RJP30H1DPD
RJP30H1DPD has several brands around the world that may have alternate names for RJP30H1DPD due to regional differences or acquisition. RJP30H1DPD may also be known as the following names:
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Description
RJP30H1DPD
Stock:9999 |
Renesas |
Silicon N Channel IGBT High speed power switching |
≥1: US $0.83580 US $0.75222 ≥5: US $0.62685 US $0.56417 ≥10: US $0.43880 US $0.39492 ≥20: US $0.41790 US $0.37611 ≥50: US $0.37611 US $0.33850 ≥100: US $0.36566 US $0.32909 ≥200: US $0.35522 US $0.31970 ≥500: US $0.34477 US $0.31029 ≥1000: US $0.33432 US $0.30089
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Description
IGBT stands for Insulated Gate Bipolar Transistor. It is a three terminal device that is primarily designed to operate at high frequency switching operations. It consists of four semiconductor layer and the operation of the device is controlled by controlling the gate voltages. Since the Gate of the device is connected to the device via an insulating layer, these type of devices are called insulated gate transistors.
RJP30H1DPD is an insulated gate bipolar transistor, that is manufactured using silicon as basic raw material. Trench gate and thin wafer technology is used to manufacture this N channel device. The device offers features like high switching speed and low leakage current.
Pin Description
Pin description of the device is given below in the picture
Pin Number | Pin Name | Description |
1 | G | Gate |
2 | C | Collector |
3 | E | Emitter |
4 | CF | Collector (Flange) |
IC Electrical Characteristics/ Specifications
Electrical specifications of the device are given below
Parameter | Description | Value |
VCES | Collector to emitter voltage | 360V |
VGES | Gate to emitter voltage | ± 30V |
IC | Collector current | 30A |
PC | Collector power dissipation | 40W |
TJ | Junction temperature | 150℃ |
TSTG | Storage temperature | -55 to 150℃ |
ic | Collector peak current | 200A |
θJ-c | Junction to case thermal impedance | 3.13 C/W |
Working Principle
IGBT is a voltage controlled device. In order to get the device in operation a gate voltage is required to be supplied to the gate which is unlike the bipolar junction transistors where a base current is required to flow through the circuit to get the device in operation. In IGBTs current can only flow in one direction. Working of the IGBT is similar to MOSFET, main difference is that the resistance offered by the device in on state is very small because of which higher currents are possible from the device.
Applications
IGBT RJP30H1DPD is used in following applications
● High speed power switching
● Welding machines
● Variable frequency drives
● Air conditioning control circuits
Switching Circuit
Switching circuit using IGBT is shown in figure below. Application of voltage pulse at the gate will put the device in operation. In the absence of any gate signal the device will remain OFF.
Single Phase Bridge Inverter
Circuit diagram of a single phase bridge inverter is shown in the figure below. Output AC signal can be of any voltage and frequency depending upon the size of transformer used and the switching and control circuit
E-catalog
Freight calculation
Express:(FEDEX, UPS, DHL, TNT)Free shipping on first 0.5kg for orders over 200$,Overweight will be charged separately
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